Granted Patent B2

US 7,405,437 · App. 11/318,577 · Granted Jul 29, 2008

Abstract

Claims (22)

1. A CMOS image sensor comprising:

a first conductive type semiconductor substrate having a photodiode area and a transistor area;

a trench formed in the semiconductor substrate corresponding to a transfer transistor of the transistor area;

a gate electrode of the transfer transistor formed in the trench;

a plurality of gate electrodes formed on the semiconductor substrate of the transistor area, excluding the transistor area of the transfer transistor;

source and drain impurity ion areas formed in the semiconductor substrate between the respective gate electrodes;

an impurity ion implantation area for controlling a threshold voltage formed on the semiconductor substrate only below the gate electrode;

a second conductive type impurity ion area formed in the semiconductor substrate of the photodiode area; and

a first conductive type impurity ion area formed on a surface of the second conductive type impurity ion area,

wherein a top surface of the gate electrode of the transistor including a reset transistor and excluding the transfer transistor is higher than a top surface of the gate electrode of the transfer transistor.

2. The CMOS image sensor as claimed in claim 1 , further comprising spacers formed at sidewalls of each gate electrode.

3. The CMOS image sensor as claimed in claim 2 , wherein the first conductive type impurity ion area is extended to a portion below the spacers.

4. A method for fabricating a CMOS image sensor comprising:

forming a first insulating film on an entire surface of a first conductive type semiconductor substrate having a photodiode area and a transistor area;

selectively removing the first insulating film on the transistor area for a transfer transistor;

forming a trench in the semiconductor substrate corresponding to a portion where the first insulating film is removed;

forming an impurity ion implantation area for controlling a threshold voltage of the transfer transistor only below the trench;

forming a gate insulating film and a gate electrode of the transfer transistor in the trench; and depositing a second insulating film on the entire surface of the semiconductor substrate and removing the first and second insulating films on the transistor area, excluding the transfer transistor; forming a plurality of gate insulating films and a plurality of gate electrodes on the semiconductor substrate where the first and second insulating films are removed and removing all of the first and second insulating films.

5. The method as claimed in claim 4 , further comprising forming an oxide film inside the trench before forming the impurity ion implantation area for controlling the threshold voltage, and removing the oxide film before forming the gate insulating film.

6. The method as claimed in claim 4 , further comprising forming an impurity ion implantation area for controlling a threshold voltage on the semiconductor substrate of the transistor area, excluding the transfer transistor, before forming the first insulating film.

7. The method as claimed in claim 4 , further comprising forming spacers at sidewalls of each gate electrode.

8. The method as claimed in claim 4 , further comprising forming a second conductive type impurity ion area in the semiconductor substrate of the photodiode area, forming a first conductive type impurity ion area on a surface of the second conductive type impurity ion area, and forming source and drain impurity ion areas in the semiconductor substrate between the respective gate electrodes.

Assignments (6)