Metal film production apparatus
View Patent ↗A source gas is supplied into a chamber through a nozzle, and electromagnetic waves are thrown from a plasma antenna into the chamber. The resulting Cl 2 gas plasma causes an etching reaction to a plurality of copper protrusions, which are arranged between a substrate and a ceiling member in a discontinuous state relative to the flowing direction of electricity in the plasma antenna, to form a precursor (Cu x Cl y ). The precursor (Cu x Cl y ) transported toward the substrate controlled to a lower temperature than the temperature of an etched member is converted into only Cu ions by a reduction reaction, and directed at the substrate to form a thin Cu film on the surface of the substrate. The speed of film formation is fast, the cost is markedly decreased, and the resulting thin Cu film is of high quality.
1. A metal film production method involving converting an atmosphere within a chamber into a plasma by supply of power from an antenna member, comprising:
disposing an etched member made of a metal and having a plurality of segments which are arranged in a discontinuous state relative to a flowing direction of electricity in the antenna member;
supplying a source gas containing a halogen into the chamber, said chamber accommodating a substrate supported by a platform;
supplying power to the antenna member to generate on a substrate side of the etched member a flow of electricity in the same direction as the flowing direction of electricity in the antenna member, thereby converting the atmosphere within the chamber into a plasma and generating a source gas plasma so that the etched member is etched with the source gas plasma to form a precursor from a metal component contained in the etched member and the halogen; and
controlling a temperature of the platform to a predetermined temperature, such that a temperature of the substrate is controlled to be about 100 to 200° C. to be lower than a temperature of the etched member to deposit the metal component of the precursor on the substrate as a film by a reduction reaction of the halogen.
2. The metal film production method of claim 1 , wherein the source gas containing the halogen is a source gas containing chlorine.
3. The metal film production method of claim 1 , wherein the etched member is made of copper to form Cu x Cl y as the precursor.
4. The metal film production method of claim 1 , wherein the etched member is made of tantalum, tungsten or titanium which is a halide-forming metal.
5. The metal film production method of claim 1 , wherein the controlling step controls the temperature of the platform by at least one of heating the platform by a heater and cooling the platform by a refrigerant.