CMOS image sensor and fabricating method thereof
View Patent ↗A CMOS image sensor and fabricating method thereof enable enhanced photo-response characteristics and protect a microlens in packaging by embedding the microlens in a passivation layer pattern. The image sensor may include a semiconductor substrate, a photodiode, a metal line, an insulating layer, a passivation layer pattern, and a microlens formed to be embedded in the passivation layer pattern.
1. A method of fabricating a CMOS image sensor, comprising the steps of:
forming a photodiode in a semiconductor substrate;
forming a first insulating layer on the semiconductor substrate;
forming a metal line on the first insulating layer for electrically connecting to the photodiode;
forming a second insulating layer on an entire surface of the first insulating layer including the metal line;
forming a passivation layer pattern and a microlens material layer pattern on the second insulating layer
such that the microlens material layer pattern is embedded between the passivation layer pattern;
forming a photoresist pattern on the passivation layer pattern and the microlens material layer pattern;
forming an opening by selectively performing an etching using the photoresist pattern as a mask until an upper surface of a metal pad is exposed and removing the photoresist pattern; and
forming a microlens by performing reflowing on the microlens material layer pattern.
2. The method of claim 1 , wherein forming the passivation layer pattern and the microlens material layer pattern comprises the steps of:
forming a passivation layer on the second insulating layer;
forming the passivation layer pattern on the second insulating layer by selectively etching a portion of the passivation layer corresponding to an area for forming the microlens;
forming a microlens material layer on the second insulating layer including the passivation layer pattern;
forming the microlens material layer pattern embedded between the passivation layer pattern by planarizing the microlens material layer until an upper surface of the passivation layer pattern is exposed.
3. The method of claim 1 , wherein forming the photodiode comprises the step of sequentially forming red, green and blue photodiodes within the semiconductor substrate in a vertical manner.
4. The method of claim 1 , wherein the first insulating layer and the second insulating layer are formed of oxide.
5. The method of claim 1 , wherein the passivation layer pattern comprises a nitride layer.
6. A method of fabricating a CMOS image sensor, comprising the steps of:
forming a photodiode in a semiconductor substrate defined by a pixel area and a peripheral area;
forming a first insulating layer on the semiconductor substrate;
forming a metal line on the first insulating layer of the pixel area and forming a metal pad on the first insulating layer of the peripheral area;
forming a second insulating layer on an entire surface of the first insulating layer including the metal line and the metal pad;
forming passivation layer patterns on the second insulating layer;
forming a microlens material layer on the second insulating layer including the passivation layer patterns;
forming microlens material layer patterns embedded between the passivation layer patterns by planarizing the microlens material layer until an upper surface of the passivation layer patterns are exposed;
forming a photoresist pattern on the passivation layer patterns including the microlens material layer patterns in order to expose the metal pad;
selectively etching, in the peripheral area, the microlens material layer pattern and the second insulating layer using the photoresist pattern as a mask until an upper surface of the metal pad is exposed and removing the photoresist pattern; and
forming at least one microlens by performing reflowing on the microlens material layer patterns of the pixel area.