CMOS image sensor and method for manufacturing the same

1 . A CMOS image sensor comprising:

a plurality of photodiodes in a semiconductor substrate;

an insulating interlayer on the semiconductor substrate, including the plurality of photodiodes;

a metal line in the insulating interlayer;

a passivation layer on the insulating interlayer;

an adhesive layer on the passivation layer; and

a plurality of microlenses on the adhesive layer.

2 . The CMOS image sensor of claim 1 , wherein the adhesive layer is formed with an overcoating layer which is similar in properties to the microlenses.

3 . The CMOS image sensor of claim 1 , wherein the adhesive layer is formed with an oxide layer.

4 . The CMOS image sensor of claim 1 , wherein the passivation layer includes an oxide layer formed on the insulating interlayer and a nitride layer formed on the oxide layer.

5 . A method for manufacturing a CMOS image sensor comprising:

forming a plurality of photodiodes in a semiconductor substrate;

forming an insulating interlayer on the semiconductor substrate, including the plurality of photodiodes;

forming a metal line in the insulating interlayer;

forming a passivation layer on the insulating interlayer;

forming an adhesive layer on the passivation layer; and

forming a plurality of microlenses on the adhesive layer.

6 . The method of claim 5 , wherein the adhesive layer is formed with an overcoating layer which is similar in properties to the microlenses.

7 . The method of claim 5 , wherein the adhesive layer is formed with an oxide layer.

8 . The method of claim 5 , wherein the process of forming the passivation layer includes the steps of forming an oxide layer on the insulating interlayer, and forming a nitride layer on the oxide layer.