CMOS image sensor and method for fabricating the same
View Patent ↗A CMOS image sensor and a method for fabricating the same are provided, in which an N type region of a photodiode is prevented from adjoining a device isolation film and a dark current is reduced. The CMOS image sensor includes an interlayer dielectric film formed between a gate poly and a power line, a contact formed in the interlayer dielectric film, and an epitaxial layer connected with the contact and formed only in a blue photodiode region.
1. A method for manufacturing a CMOS image sensor, comprising:
forming an interlayer dielectric film between a gate poly and a power line;
forming a contact in the interlayer dielectric film;
forming an epitaxial layer connected with the contact; and
allowing the epitaxial layer to remain in a blue photodiode region having a low wavelength and removing the epitaxial layer in a region other than the blue photodiode region.
2. The method of claim 1 , wherein the epitaxial layer has a thickness of 300 Å to 500 Å.
3. The method of claim 1 , wherein the epitaxial layer is an N type epitaxial layer.
4. The method of claim 1 , wherein the epitaxial layer is the same width as a color filter array.