System for detecting film quality variation and method using the same
A system includes a throttle valve moving in response to a pressure present in a vacuum pump line for controlling the pressure of the vacuum pump line based on the movement of the throttle valve; a monometer for detecting the movement of the throttle valve and outputting movement data indicative of the movement of the throttle valve; and a proportional integral derivative controller for generating feedback information based on the movement data output from the monometer.
1 . A system for detecting film quality variation, the system comprising:
a throttle valve adapted to move in response to a pressure present in a vacuum pump line, wherein the throttle valve controls the pressure of the vacuum pump line based on the movement of said throttle valve;
a monometer for detecting the movement of said throttle valve and outputting movement data indicative of the movement of said throttle valve; and
a controller for generating feedback information based on the movement data output from said monometer.
2 . The system according to claim 1 , wherein said throttle valve receives the feedback information generated by said controller to determine the movement of said throttle valve.
3 . The system according to claim 1 , wherein said controller is a proportional integral derivative controller.
4 . The system according to claim 1 , wherein the pressure of the vacuum pump line is generated during a dry etching process.
5 . The system according to claim 1 , wherein the pressure of the vacuum pump line is not more than 10 mT.
6 . The system according to claim 1 , further comprising a dry etching apparatus.
7 . The system according to claim 6 , wherein said dry etching apparatus comprises:
a magnetron for generating microwaves in accordance with an electromagnetic field;
a body for directing the microwaves at a process wafer, said body including a first waveguide coupled to said magnetron and communicating with a second waveguide for receiving the process wafer;
a coil wound around the second waveguide for generating a magnetic field perpendicular to the electromagnetic field of the microwaves;
a gas reaction chamber housed within the second waveguide;
a base member having a seating surface for receiving the process wafer within the reaction chamber; and
a high-frequency power source connected to said base member.
8 . The system according to claim 7 , wherein the process wafer undergoes a dry etching process and wherein a film quality of the process wafer is detected according to the movement of said throttle valve.
9 . The system according to claim 7 , wherein the pressure of the vacuum pump line is generated during a cleaning process performed inside said gas reaction chamber.
10 . A system for detecting film quality variation, the system comprising:
a vacuum pump line generating a pressure during dry etching of a process wafer;
a throttle valve moving in response to a pressure present in said vacuum pump line for controlling the pressure of the vacuum pump line based on the movement of said throttle valve;
a monometer for detecting the movement of said throttle valve and outputting movement data indicative of the movement of said throttle valve; and
a proportional integral derivative controller for generating feedback information based on the movement data output from said monometer, the generated feedback information being used to determine the movement of said throttle valve.
11 . A method of detecting film quality variation, the method comprising:
generating a pressure in a vacuum pump line, the pressure moving a throttle valve;
detecting the movement of the throttle valve to output movement data indicative of the detected movement of the throttle valve;
generating feedback information based on the movement data output; and
controlling the pressure of the vacuum pump line based on the feedback information.
12 . The method according to claim 11 , wherein the feedback information is generated by a proportional integral derivative controller.
13 . The method according to claim 11 , wherein the movement of the throttle valve is detected using a monometer.
14 . The method according to claim 11 , wherein the pressure of the vacuum pump line is not more than 10 mT.
15 . The method according to claim 11 , wherein the pressure in the vacuum pump line is generated during a dry etching process performed on a process wafer.
16 . The method according to claim 11 , wherein the pressure in the vacuum pump line is generated during a cleaning process performed within a gas reaction chamber performing a dry etching process.