CMOS image sensor and method for fabricating the same
Provided are a CMOS image sensor which has an infrared ray cut-off filter formed therein such that the size of a camera module of a portable telephone can be reduced and manufacturing yield can be improved and a method of manufacturing the same. The CMOS image sensor includes a color filter layer formed on a semiconductor substrate in which a photodiode region, a gate electrode, an interlayer insulating layer, and a metal line are formed, an infrared ray cut-off filter formed on the color filter layer, and a micro lens formed on the infrared ray cut-off filter.
1 . A CMOS image sensor comprising:
a semiconductor substrate in which a photodiode region, a gate electrode, an interlayer insulating layer, and a metal line are formed;
a color filter layer on the semiconductor substrate;
an infrared ray cut-off filter formed on the color filter layer; and
a micro lens formed on the infrared ray cut-off filter.
2 . The CMOS image sensor according to claim 1 , further comprising a planarization layer formed between the color filter layer and the infrared ray cut-off filter.
3 . The CMOS image sensor according to claim 1 , wherein the infrared ray cut-off filter is formed of a photoresist having a filter pigment mixed therein.
4 . The CMOS image sensor according to claim 3 , wherein the filter pigment includes at least two compounds selected from the group consisting of diammonium based compound, phthalocyanine based compound, and nickel complex based compound.
5 . The CMOS image sensor according to claim 1 , wherein the infrared ray cut-off filter has a thickness of about 1.0-3.0 μm.
6 . The CMOS image sensor according to claim 1 , further comprising an oxide layer formed on the micro lens for protecting the micro lens.
7 . A method of manufacturing a CMOS image sensor comprising:
forming a color filter layer on a semiconductor substrate in which a photodiode region, a gate electrode, an interlayer insulating layer, and a metal line are formed;
forming an infrared ray cut-off filter on the color filter layer; and
forming a micro lens on the infrared ray cut-off filter.
8 . The method according to claim 7 , further comprising forming a planarization layer on the color layer before forming the infrared ray cut-off filter.
9 . The method according to claim 7 , wherein the infrared ray cut-off filter is formed of a photoresist having a filter pigment mixed therein.
10 . The method according to claim 9 , wherein the filter pigment includes at least two compounds selected from the group consisting of diammonium based compound, phthalocyanine based compound, and nickel complex based compound.
11 . The method according to claim 7 , wherein the infrared ray cut-off filter has a thickness of about 1.0-3.0 μm.
12 . The method according to claim 7 , further comprising forming an oxide layer on the micro lens for protecting the micro lens.