CMOS image sensor and method for manufacturing the same

1. A method for manufacturing a CMOS image sensor comprising:

preparing a transparent substrate including an active area, having a photodiode region and a transistor region, and a field area for isolation of the active area;

forming a black matrix layer on the transparent substrate excluding the photodiode region;

forming a color filter layer on the transparent substrate corresponding to the photodiode region;

forming an insulating layer on the transparent substrate including the black matrix layer and the color filter layer;

forming a p-type semiconductor layer on the transparent substrate of the active area including the color filter layer and the black matrix layer;

forming a gate insulating layer and a plurality of gate electrodes on the p-type semiconductor layer of the transistor region;

forming a photodiode including a n-type impurity region and a p-type impurity region in the p-type semiconductor layer of the photodiode region; and

forming a source region and a drain region by implanting n-type impurity ions into the p-type semiconductor layer between each of the plurality of gate electrodes,

wherein forming the p-type semiconductor layer includes:

depositing a polysilicon layer doped with p-type impurity ions or an amorphous silicon layer doped with p-type impurity ions on the surface of the transparent substrate including the black matrix layer and the color filter layer; and

selectively removing the polysilicon layer doped with p-type impurity ions or the amorphous silicon layer doped with p-type impurity ions from the field area.

2. The method of claim 1 , wherein the process of forming the black matrix layer includes:

forming a light-shielding layer or a black resin on a surface of the transparent substrate; and

selectively removing the light-shielding layer or the black resin from the photodiode region.

3. The method of claim 1 , wherein the step of forming a photodiode includes:

forming an n-type impurity region by implanting n-type impurity ions into the p-type semiconductor layer; and

forming a p-type impurity region by implanting p-type impurity ions into a surface of the n-type impurity region.

4. The method of claim 1 , further comprising:

forming an insulating interlayer on the surface of the transparent substrate including the gate electrode, the photodiode and the source region and the drain region;

forming a contact hole in the p-type impurity region of the photodiode and the source region and the drain region; and

forming a metal line on the insulating interlayer, wherein the metal line is electrically connected with the photodiode and the source region and the drain region.

5. A method for manufacturing a CMOS image sensor comprising:

preparing a transparent substrate including an active area, having a photodiode region and a transistor region, and a field area for isolation of the active area;

forming a black matrix layer on the transparent substrate excluding the photodiode region;

forming an insulating layer on the transparent substrate including the black matrix layer;

forming a p-type semiconductor layer on the transparent substrate of the active area including the black matrix layer;

forming a gate insulating layer and a plurality of gate electrodes on the p-type semiconductor layer of the transistor region;

forming a photodiode including an n-type impurity region and a p-type impurity region in the p-type semiconductor layer of the photodiode region; and

forming a source region and a drain region by implanting n-type impurity ions into the p-type semiconductor layer between each of the plurality of gate electrodes,

wherein forming the p-type semiconductor layer includes:

depositing a polysilicon layer doped with p-type impurity ions or an amorphous silicon layer doped with p-type impurity ions on the surface of the transparent substrate including the black matrix layer and the color filter layer; and

selectively removing the polysilicon layer doped with p-type impurity ions or the amorphous silicon layer doped with p-type impurity ions from the field area.

6. The method of claim 5 , further comprising:

forming a color filter layer on a rear surface of the transparent substrate corresponding to the photodiode region.

7. A method for manufacturing a CMOS image sensor comprising:

preparing a transparent substrate including an active area, having a photodiode region and a transistor region, and a field area for isolation of the active area;

forming a color filter layer on the rear surface of the transparent substrate corresponding to the photodiode region;

forming an insulating layer on the transparent substrate including the color filter layer;

forming a p-type semiconductor layer on the transparent substrate of the active area including the color filter layer;

forming a gate insulating layer and a plurality of gate electrodes on the p-type semiconductor layer of the transistor region;

forming a photodiode including an n-type impurity region and a p-type impurity region in the p-type semiconductor layer of the photodiode region; and

forming a source region and a drain region by implanting n-type impurity ions into the p-type semiconductor layer between each of the plurality of gate electrodes,

wherein forming the p-type semiconductor layer includes:

depositing a polysilicon layer doped with p-type impurity ions or an amorphous silicon layer doped with p-type impurity ions on the surface of the transparent substrate including the black matrix layer and the color filter layer; and

selectively removing the polysilicon layer doped with p-type impurity ions or the amorphous silicon layer doped with p-type impurity ions from the field area.

8. The method of claim 7 , further comprising:

forming a black matrix layer on a rear surface of the transparent substrate excluding the photodiode region.