Method for cleaning a semiconductor substrate
A method for cleaning a semiconductor substrate, on which a semiconductor device is formed having a damascene structure using a copper line, that may prevent an abrasion of the substrate by using a simplified cleaning process. The method includes cleaning a surface of the semiconductor substrate having a copper line with a first cleaning solution including HF and ultra pure water; and cleaning the surface of the semiconductor substrate having the copper line with a mixture of a second cleaning solution including H 2 O 2 and ultra pure water and a third cleaning including TMAH and ultra pure water.
1 . A method for cleaning a semiconductor substrate having a semiconductor device, the method comprising:
cleaning a surface of the semiconductor substrate having a copper line with a first cleaning solution including hydrofluoric acid and ultra pure water; and
cleaning the surface of the semiconductor substrate having the copper line with a mixture of a second cleaning solution including hydrogen peroxide and ultra pure water and a third cleaning solution including tetramethylammonium hydroxide and ultra pure water.
2 . The method of claim 1 , wherein said cleaning using the first cleaning solution is performed only during the copper line formation.
3 . The method of claim 1 , wherein said cleaning using the second and third cleaning solutions is performed for fabrication steps following the formation of the copper line.
4 . The method of claim 1 , wherein the copper line is formed as a damascene structure.
5 . The method of claim 1 , wherein the copper line is formed as a dual damascene structure.
6 . The method of claim 1 , wherein the copper line is formed on a first surface of the semiconductor substrate and wherein the first, second, and third cleaning solutions are applied to a second surface of the semiconductor substrate.
7 . The method of claim 6 , wherein the second surface is a rear surface having no semiconductor device thereon.
8 . A method of cleaning a rear surface of a semiconductor device comprising:
exposing the rear surface to a first solution during a process step;
exposing the rear surface to mixture of a second and third solution after the process step has been performed.
9 . The method of claim 8 , wherein the second and third solutions are different from the first solution.
10 . The method of claim 8 , wherein the first solution comprises hydrofluoric acid and ultra pure water.
11 . The method of claim 8 , wherein the second solution comprises hydrogen peroxide and ultra pure water.
12 . The method of claim 8 , wherein the third solution comprises tetramethylammonium hydroxide and ultra pure water.
13 . The method of claim 8 , wherein the process step comprises forming a copper line.
14 . The method of claim 8 , wherein the process step comprises forming a copper line with a damascene process.