Method for patterning low dielectric layer of semiconductor device

1. A method for patterning a low dielectric (Low-K) insulating layer of a semiconductor device comprising:

forming a Low-K insulating layer on a semiconductor substrate;

irradiating the Low-K insulating layer with a beam of light having an energy which corresponds to a dissociation energy of an O—H bond for several milliseconds in order to remove hydroxyl group from a surface of the Low-K insulating layer, to make the Low-K insulating layer hydrophobic and to improve adhesion between the Low-K insulating layer and a photoresist;

forming a photoresist pattern on the Low-K insulating layer; and

ashing the photoresist pattern;

wherein the Low-K insulating layer is formed of any one of a group consisting of phosphorous silicate glass PSG layer, a boron phosphorous silicate glass BPSG layer, an undoped silicate glass USG layer, a fluorine doped silicate glass FSG layer, a high density plasma HDP layer, a plasma enhanced-tetra ethyl ortho silicate PE-TEOS layer, and a spin on glass SOG layer.

2. The method of claim 1 , wherein the beam is any one of excimer laser and UV beam.

3. The method of claim 1 , wherein the energy is above 4.43 eV.

4. The method of claim 1 , wherein the beam is a UV beam.

5. The method of claim 4 , wherein the UV beam is irradiated with an intensity of about 250 mW/cm2.

6. The method of claim 1 , wherein the beam is a KrF excimer laser.

7. The method of claim 6 , wherein the KrF excimer laser is irradiated with an amount within a range of 20 mJ/cm2 to 70 mJ/cm2.

8. The method of claim 1 , further comprising:

cleaning the Low-K insulating layer after irradiating the Low-K insulating layer with a beam to make the Low-K insulating layer hydrophobic.

9. The method of claim 1 , wherein irradiating the Low-K insulating layer with a beam to make the Low-K insulating layer hydrophobic includes irradiating the entire Low-K insulating layer.