Image sensor and fabricating method thereof

1. A method of fabricating an image sensor, comprising the steps of:

forming a sublayer including a photodiode, a transistor, and a metal line on a substrate;

forming a protecting layer on the sublayer;

forming a protecting layer pattern corresponding to the photodiode;

forming a high density plasma oxide layer on the sublayer, including the protecting layer, the high density oxide layer being deposited at a slanted or an uneven surface of the protecting layer pattern;

forming a pattern layer on the sublayer by etching back the high density plasma oxide layer and the protecting layer pattern, the pattern layer corresponding to the photodiode and having a curved surface with a slanted edge portion;

forming combined color filter and microlenses on the pattern layer to have a contour the same as a contour of the curved surface of the pattern layer.

2. The method of claim 1 , wherein the high density plasma oxide layer is formed to have thickness of 500-5,000 Å.

3. The method of claim 1 , wherein the protecting layer pattern forming step comprising the steps of:

coating a photoresist on the protecting layer;

forming a mask layer by selectively removing the photoresist to leave at least part overlapped with the photoresist by exposure and development; and

forming a protecting layer pattern by etching the protecting layer using the mask.

4. The method of claim 1 , further comprising the step of forming a planarizing layer over the substrate, including the combined color filter and microlenses.

5. The method of claim 4 , further comprising the step of forming a condensing lens on the planarizing layer to be overlapped with the combined color filter and microlenses.