Semiconductor device including a stacked capacitor

1. A semiconductor device comprising:

a substrate;

an insulating film overlying said substrate;

a contact electrode disposed proximate said insulating film and overlying said substrate; and

a stacked capacitor including a bottom electrode, a capacitor insulation film and a top electrode consecutively deposited,

wherein said bottom electrode includes a plurality of islands formed on said insulating film and a film formed on a surface portion of said contact electrode, and one of a metallic and alloy film covering said islands on said insulating film and said film formed on said surface portion of said contact electrode, and

wherein said plurality of islands include Co.

2. The semiconductor device according to claim 1 , wherein said capacitor insulation film includes at least one of Al 2 O 3 and HfO 2 .

3. The semiconductor device according to claim 1 , further comprising a transistor connected to said stacked capacitor.

4. The semiconductor device according to claim 1 , wherein said film formed on a surface portion of said contact electrode includes Co.

5. The semiconductor device according to claim 1 , wherein said stacked capacitor comprises a convex surface and a concave surface.

6. The semiconductor device according to claim 5 , wherein said top electrode includes a convex surface and a concave surface.

7. The semiconductor device according to claim 1 , wherein said stacked capacitor comprises a planar surface over said contact electrode.

8. The semiconductor device according to claim 7 , wherein said top electrode includes a planar surface over said contact electrode and below a top surface of said stacked capacitor.

9. A method for manufacturing a semiconductor device comprising:

forming a capacitor hole in an insulating film;

depositing Co on said insulating film including inside of said capacitor hole and a contact electrode at a temperature of not greater than 500 degrees C., to form a Co film including a convex and concave surface on said insulating film and a film on a surface portion of said contact electrode;

forming one of a metallic and alloy film including a convex and concave surface on said Co deposited on said insulating film, and a planar film on said contact electrode; and

forming a stacked capacitor including a top electrode, a capacitor insulation film and a bottom electrode, said bottom electrode including one of said metallic and said alloy film.

10. The method according to claim 9 , wherein at least a portion of said deposited Co includes a plurality of islands.

11. The method according to claim 9 , wherein said Co depositing is conducted at a temperature of not greater than 450 degrees C.

12. The method according to claim 11 , wherein said Co depositing is conducted at a temperature of not less than 350 degrees C.

13. The method according to claim 12 , wherein at least a portion of said Co film formed by said Co depositing configures a plurality of islands.

14. The method according to claim 9 , wherein said capacitor insulation film includes at least one of Al 2 O 3 and HfO 2 .

15. The method according to claim 9 , wherein at least a portion of said deposited Co film includes a planar film formed on said contact electrode.

16. The method according to claim 9 , wherein said stacked capacitor comprises a convex surface and a concave surface.

17. The method according to claim 16 , wherein said top electrode includes a convex surface and a concave surface.

18. The method according to claim 9 , wherein said stacked capacitor comprises a planar surface over said contact electrode.

19. The method according to claim 18 , wherein said top electrode includes a planar surface over said contact electrode and below a top surface of said stacked capacitor.