Process for manufacturing a semiconductor device comprising a metal-compound film
View Patent ↗There is provided a semiconductor device comprising a dielectric film made of a high dielectric constant material, in which a leak current is reduced in the film and which exhibits improved device reliability. Specifically, a dielectric film 142 is a metal-compound film having a composition represented by the formula MO x C y N z wherein x, y and z meet the conditions: 0<x, 0.1≦y≦1.25, 0.01≦z and x+y+z=2; and M comprises at least Hf or Zr.
1. A process for manufacturing a semiconductor device, comprising the steps of:
forming a ZrO x C y N z (x+y+z=2, 0.7<x) film as a dielectric film on a lower electrode by atomic layer deposition using an oxidizer gas and a gas including Zr(N(CH 3 )(C 2 H 5 )) 4 ; and
forming an upper electrode on said dielectric film;
wherein when forming said dielectric film, a ratio of said gas including Zr(N(CH 3 )(C 2 H 5 )) 4 to said oxidizer gas is 1/100 or less.
2. The process for manufacturing a semiconductor device as claimed in claim 1 , wherein said oxidizer gas is a mixture of a nitriding gas and an oxidizing gas.
3. The process for manufacturing a semiconductor device as claimed in claim 2 , wherein said nitriding gas is NO and said oxidizing gas is NO 2 .
4. The process for manufacturing a semiconductor device as claimed in claim 2 , wherein said nitriding gas is NO and said oxidizing gas is O 3 .
5. The process for manufacturing a semiconductor device as claimed in claim 1 , wherein said oxidizer gas is O 3 .
6. The process for manufacturing a semiconductor device as claimed in claim 1 , wherein said oxidizer gas is NO.
7. The process for manufacturing a semiconductor device as claimed in claim 1 , wherein said oxidizer gas is a mixture of NO and N 2 , a ratio of NO/N 2 is 1/10,000 or more.
8. The process for manufacturing a semiconductor device as claimed in claim 1 , wherein when forming said dielectric film a nitrogen-containing gas is fed into a chamber.
9. The process for manufacturing a semiconductor device as claimed in claim 8 , wherein a cycle of said atomic layer deposition includes a step of feeding said nitrogen-containing gas.
10. The process for manufacturing a semiconductor device as claimed in claim 1 , wherein after forming said dielectric film, said dielectric film is nitrided by a plasma.
11. The process for manufacturing a semiconductor device as claimed in claim 1 ,
wherein said lower electrode and upper electrode films are formed of metal material.
12. The process for manufacturing a semiconductor device as claimed in claim 11 ,
wherein said metal material is TiN.