Semiconductor device having an inspection hole striding a boundary
View Patent ↗The semiconductor device includes a semiconductor substrate, a diffusion layer, an interconnect layer, a contact plug, a contact-inspection hole, a via plug, and a via-inspection hole. Similarly to a contact plug hole, the contact-inspection hole extends from the diffusion layer to the interconnect layer. The opening of the contact-inspection hole on the side of the diffusion layer is disposed across the boundary of the diffusion layer. Also, similarly to a via plug hole, the via-inspection hole extends from an interconnect to an interconnect layer. The opening of the via-inspection hole on the side of the interconnect is disposed across the boundary of the interconnect.
1. A semiconductor device comprising:
a semiconductor substrate;
a plurality of layers including a surface layer of said semiconductor substrate and stacked layers provided over said semiconductor substrate with intervening insulation films there between, one of said layers having a first portion made of a first material and a second portion laterally adjacent to said first portion and made of a second material, said first material being different from said second material, another one of said layers being stacked above said one of said layers and having an interconnect portion and a third portion made of a third material different from said interconnect portion; and
an inspection hole having a top surface thereof facing to said third portion of said another one of said layers and having a bottom surface thereof facing only to said one of said layers, said inspection hole at said bottom surface thereof exposing a boundary between said first portion and said second portion of said one of said layers.
2. A semiconductor device comprising:
a first interconnect;
a second interconnect layer provided at an upper level of a first interconnect layer including said first interconnect;
a conductive plug provided in a plug hole extending from said first interconnect layer to said second interconnect layer; and
an inspection hole extending from said first interconnect layer only to a nonelectrically conducting portion of said second interconnect layer;
wherein said inspection hole is located so that an opening of said inspection hole on the side of said first interconnect layer strides across a boundary of said first interconnect.
3. The semiconductor device according to claim 1 , further comprising a conductive material filling said inspection hole.
4. The semiconductor device according to claim 1 , wherein said one of said layers is a surface layer of said semiconductor substrate, and said first portion of said one of said layers is a diffusion layer, and said second portion of said one of said layers is an isolation region.
5. The semiconductor device according to claim 1 , wherein said first portion of said one of said layers is another interconnect formed in said one of said layers.
6. The semiconductor device according to claim 1 , further comprising:
a plug hole separate from said inspection hole and connecting said interconnect formed in said another one of said layers to said first portion of said one of said layers; and
a plug filling said plug hole and electrically connecting said interconnect with said first portion.
7. The semiconductor device according to claim 1 , wherein, said layers further includes an insulating layer formed between said one of said layers and said another one of said layers, wherein said inspection hole penetrates said insulating layer.