Methods of forming semiconductor constructions
View Patent ↗The invention includes a method of forming a semiconductor construction, such as an MRAM construction. A block is formed over a semiconductor substrate. First and second layers are formed over the block, and over a region of the substrate proximate the block. The first and second layers are removed from over the block while leaving portions of the first and second layers over the region proximate the block. At least some of the first layer is removed from under the second layer to form a channel over the region proximate the block. A material, such as a soft magnetic material, is provided within the channel. The invention also includes semiconductor constructions.
1. A method of forming a semiconductor construction, comprising:
forming a block comprising at least one magnetic composition over a semiconductor substrate; the block having a pair of laterally opposing sidewalls in at least one cross-sectional view; the at least one magnetic composition within the block being entirely contained between the pair of sidewalls;
forming first, second and third layers over the block, and over a region of the substrate proximate the block; the region of the substrate being laterally outward of the laterally opposing sidewalls;
removing the second and third layers from over the block while leaving portions of the second and third layers over the region proximate the block; at least some of the second layer being removed from under the third layer to leaving a channel over the region proximate the block, the channel laterally surrounding the block; and
forming a magnetic material within the channel.
2. The method of claim 1 further comprising removing the first layer from over the block.
3. The method of claim 1 wherein the removing the second and third layers from over the block comprises chemical-mechanical polishing of the second and third layers.
4. The method of claim 1 wherein the removing the second and third layers from over the block comprises chemical-mechanical polishing of the second and third layers, and wherein the chemical-mechanical polishing also removes the first layer from over the block.
5. The method of claim 1 wherein the first and third layers are identical to one another in composition, and wherein the second layer is different in composition from the first and third layers.
6. The method of claim 1 wherein the third layer comprises silicon dioxide and the second layer comprises silicon nitride.
7. The method of claim 1 wherein the first and third layers comprise silicon dioxide and the second layer comprises silicon nitride.
8. The method of claim 1 wherein the third layer comprises silicon nitride and the second layer comprises silicon dioxide.
9. The method of claim 1 wherein the first and third layers comprise silicon nitride and the second layer comprises silicon dioxide.
10. The method of claim 1 wherein the first and third layers comprise silicon carbide and the second layer does not comprise silicon carbide.
11. The method of claim 1 wherein the first and third layers consist essentially of one or both of silicon and carbon; and wherein the second layer consists essentially of silicon and one or both of nitrogen and oxygen.
12. The method of claim 1 wherein the third layer consists essentially of silicon and one or both of nitrogen and oxygen; and wherein the second layer comprises carbon.
13. The method of claim 1 wherein the first and third layers consist essentially of silicon and one or both of nitrogen and oxygen; and wherein the second layer comprises carbon.
14. The method of claim 1 wherein the magnetic material formed within the channel comprises one or more of nickel, iron and copper.
15. The method of claim 1 wherein the magnetic material formed within the channel consists essentially of mu-metal.