Silicon member and method of manufacturing the same
There is provided a silicon member that can prevent the resistivity of a member itself from varying in a semiconductor manufacturing process, in particular, in a plasma processing process, thereby making wafer processing uniform and being not an impurity contamination source to a wafer to be processed, and a method for manufacturing the same. The silicon member having a resistivity of 0.1 Ω·cm or more and 100 Ω·cm or less is manufactured with steps which are manufacturing a P-type silicon single crystal doped with 13 group atoms of a periodic table having an intrinsic resistivity of 1 Ω·cm or more and 100 Ω·cm or less, and changing said P-type silicon single crystal into an N-type silicon single crystal by oxygen donors formed by annealing at a temperature of 300° C. or more and 500° C. or less.
1 . A silicon member, comprising a silicon single crystal doped with 13 group atoms and having its conduction type changed from a P type into an N type by oxygen donors formed by annealing processing and having a resistivity of 0.1 Ω·cm or more and 100 Ω·cm or less.
2 . The silicon member as claimed in claim 1 , having an oxygen concentration of 1×10 18 atoms/cm 3 or more and 2.5×10 18 atoms/cm 3 or less.
3 . A method for manufacturing a silicon member, comprising steps which are manufacturing a P-type silicon single crystal doped with 13 group atoms of a periodic table having an intrinsic resistivity of 1 Ω·cm or more and 100 Ω·cm or less, and changing said P-type silicon single crystal into an N-type silicon single crystal by oxygen donors formed by annealing at a temperature of 300° C. or more and 500° C. or less.
4 . The method for manufacturing a silicon member as claimed in claim 3 , wherein the P-type silicon single crystal is doped with the 13 group atoms at a concentration of 1×10 14 atoms/cm 3 or more and 1×10 16 atoms/cm 3 or less.