Semiconductor device and manufacturing method thereof
View Patent ↗A semiconductor device includes a semiconductor substrate which has an integrated circuit formed on a front surface thereof, and a rough surface with a height difference of 1 to 5 μm on a rear surface thereof. A protective film is provided on the rear surface of the semiconductor substrate.
1. A method of manufacturing a semiconductor device, comprising:
forming columnar electrodes on a semiconductor wafer;
forming a sealing film on the semiconductor wafer between peripheries of the columnar electrodes;
grinding a rear surface of the semiconductor wafer;
cutting from a rear surface side of the semiconductor wafer to at least a halfway point of the sealing film to form grooves for separating the semiconductor wafer into individual semiconductor substrates;
roughening the rear surface and side surface of the semiconductor wafer by wet etching;
forming a protective film on the rear surface of the semiconductor wafer and inside of the grooves; and
cutting the protective film formed in the grooves to obtain a plurality of semiconductor devices.
2. The method according to claim 1 , wherein the protective film is formed of a resin.
3. The method according to claim 1 , wherein the protective film is formed of a metal.
4. The method according to claim 1 , wherein the semiconductor wafer has an integrated surface formed on a front surface thereof, which is opposite to the rear surface.
5. The method according to claim 4 , wherein the columnar electrodes are formed on the front surface of the semiconductor wafer.
6. The method according to claim 1 , wherein the rear surface of the semiconductor wafer is roughened to be a rough surface with a height difference of 1 to 5 μm.
7. The method according to claim 1 , wherein the rear surface and the side surface of the semiconductor wafer are roughened to be rough surfaces with a height difference of 1 to 5 μm.
8. The method according to claim 1 , wherein the rear surface and the side surface of the semiconductor wafer are roughened to be rough surfaces having a plurality of concave and convex portions, and wherein a height difference between a base of each of the concave portions to a top of an adjacent one of the convex portions is 1 to 5 μm.
9. The method according to claim 8 , wherein the convex portions are substantially arc-shaped.
10. The method according to claim 1 , further comprising forming a solder ball on each of the columnar electrodes.
11. The method according to claim 10 , wherein the solder balls are formed on the columnar electrodes before the cutting to obtain the semiconductor devices is performed.
12. The method according to claim 1 , wherein said cutting to obtain the semiconductor devices comprises cutting through the sealing film above the grooves.
13. The method according to claim 12 , wherein in each of the semiconductor devices obtained by said cutting, a side surface of the sealing film obtained by said cutting forms one surface together with a side surface of the protective film obtained by said cutting.
14. The method according to claim 1 , wherein the semiconductor wafer includes a plurality of connection pads, wherein the method further comprises forming wiring connected to the connection pads, and wherein the columnar electrodes are formed on the wiring.
15. The method according to claim 14 , further comprising forming an insulating film on a front surface, opposite to the rear surface, of the semiconductor wafer, and forming a protective film on the insulating film;
wherein the wiring is formed on the protective film and is connected to the connection pads through holes in the protective film and the insulating film.
16. The method according to claim 15 , wherein an integrated circuit is formed on the front surface of the semiconductor wafer, and the connection pads are connected to the integrated circuit.
17. A method of manufacturing a semiconductor device, comprising:
forming columnar electrodes to be connected to connection pads on a front surface of a semiconductor wafer;
forming a sealing film between peripheries of the columnar electrodes;
grinding a rear surface of the semiconductor wafer to reduce a thickness of the semiconductor wafer;
cutting from a rear surface side of the semiconductor wafer to at least a halfway point of the sealing film to form grooves;
roughening the rear surface and side surface of the semiconductor wafer by wet etching;
forming a protective film on the rear surface of the semiconductor wafer and inside of the grooves; and
cutting the protective film formed in the grooves and the sealing film provided above the grooves to obtain a plurality of semiconductor devices.