Film-forming system and film-forming method
A film-forming system comprising a vacuum chamber and an electroconductive partition plate dividing said vacuum chamber into a plasma generating space provided with a high-frequency electrode and a film-forming treatment space provided with a substrate-retaining mechanism for holding a substrate mounted thereon. A gas for generating desired active species by discharge plasma is introduced into the plasma generating space. Said desired active species are supplied to the film-forming treatment space through a plurality of penetration holes formed in the electroconductive partition plate for communicating the plasma generating space with the film-forming treatment space. Said electroconductive partition plate has a first internal space separated from the plasma generating space and communicating with the film-forming treatment space via a plurality of material gas diffusion holes. A material gas is introduced from the outside into said first internal space and supplied into the film-forming treatment space through a plurality of said material gas diffusion holes. Said electroconductive partition plate further has a second internal space separated from said first internal space and communicating with said film-forming treatment space via a plurality of gas diffusion holes. A gas other than said material gas is introduced from the outside into said second internal space. A film is deposited on the substrate by a reaction between said active species and said material gas supplied to said film-forming treatment space.
1 . A film-forming system comprising a vacuum chamber and an electroconductive partition plate dividing said vacuum chamber into two spaces, one of said two spaces is formed as a plasma generating space provided with a high-frequency electrode and the other space is formed as a film-forming treatment space provided with a substrate-retaining mechanism for holding a substrate mounted thereon;
said electroconductive partition plate is provided with a plurality of penetration holes for communicating the plasma generating space with the film-forming treatment space;
a gas for generating desired active species by discharge plasma is introduced into the plasma generating space;
said desired active species generated in the plasma generating space are supplied to the film-forming treatment space through said plurality of the penetration holes in the electroconductive partition plate;
said electroconductive partition plate has a first internal space separated from the plasma generating space and communicating with the film-forming treatment space via a plurality of material gas diffusion holes;
a material gas is introduced from the outside into said first internal space and supplied into the film-forming treatment space through a plurality of said material gas diffusion holes; and a film is deposited on the substrate by a reaction between said active species and said material gas supplied to said film-forming treatment space;
wherein said electroconductive partition plate further has a second internal space separated from said first internal space and communicating with said film-forming treatment space via a plurality of gas diffusion holes, and a gas other than said material gas is introduced from the outside into said second internal space.
2 . A film-forming system comprising a vacuum chamber and an electroconductive partition plate dividing said vacuum chamber into two spaces, one of said two spaces is formed as a plasma generating space provided with a high-frequency electrode and the other space is formed as a film-forming treatment space provided with a substrate-retaining mechanism for holding a substrate mounted thereon;
said electroconductive partition plate is provided with a plurality of penetration holes for communicating the plasma generating space with the film-forming treatment space;
a gas for generating desired active species by discharge plasma is introduced into the plasma generating space;
said desired active species generated in the plasma generating space are supplied to the film-forming treatment space through said plurality of the penetration holes in the electroconductive partition plate;
said electroconductive partition plate has a first internal space separated from the plasma generating space and communicating with the film-forming treatment space via a plurality of material gas diffusion holes;
a material gas is introduced from the outside into said first internal space and supplied into the film-forming treatment space through a plurality of said material gas diffusion holes; and a film is deposited on the substrate by a reaction between said active species and said material gas supplied to said film-forming treatment space;
wherein the diameter of said penetration holes is smaller in the side of the plasma generating space than in the side of the film-forming treatment space;
said electroconductive partition plate further has a second internal space separated from said first internal space and communicating with said penetration holes via gas introduction holes, and a gas other than the material gas is introduced from the outside into said second internal space.
3 . A film-forming system according to claim 1 , wherein the material gas is a monosilane gas, a disilane gas, a trisilane gas or a tetraethoxysilane gas.
4 . A film-forming system according to claim 1 , wherein the gas for generating desired active species by discharge plasma in the side of the plasma generating space includes an oxygen gas.
5 . A film-forming system according to claim 1 , wherein the gas for generating desired active species by discharge plasma in the side of the plasma generating space includes an inert gas.
6 . A film-forming system according to claim 1 , wherein the gas other than the material gas introduced into the second internal space includes an oxygen gas.
7 . A film-forming system according to claim 1 , wherein the gas other than the material gas introduced into the film-forming treatment space includes an added gas comprising any one or combinations selected from an ammonia gas, a nitrogen dioxide gas, an ethane gas and an ethylene gas.
8 . A film-forming system according to claim 1 , further comprising a flow-rate controller for controlling the flow rate of a gas for generating desired active species by discharge plasma in the side of the plasma generating space and a flow-rate controller for controlling the flow rate of a gas other than the material gas introduced into the second internal space, both of the flow-rate controllers being able to be independently controlled.
9 . A method of forming a film on the substrate by using the film-forming system described in claim 1 .
10 . A method of forming a film on the substrate by using the film-forming system described in claim 2 .
11 . A method of forming a film on the substrate by using the film-forming system described in claim 3 .
12 . A method of forming a film on the substrate by using the film-forming system described in claim 4 .
13 . A method of forming a film on the substrate by using the film-forming system described in claim 5 .
14 . A method of forming a film on the substrate by using the film-forming system described in claim 6 .
15 . A method of forming a film on the substrate by using the film-forming system described in claim 7 .
16 . A method of forming a film on the substrate by using the film-forming system described in claim 8.