Water vapor passivation of a wall facing a plasma
A chamber passivation method particularly useful for hydrogen plasma cleaning of low-k dielectrics prior to coating a barrier layer into a via hole with hydrogen radicals are provided from a remote plasma source. For each wafer, the chamber is passivated with water vapor (or other gas even more chemabsorbed on plasma facing walls) passed through the remote plasma source prior to the ignition of the hydrogen plasma. The water vapor is absorbed on walls, such as alumina and quartz parts of the remote plasma source, and forms a protective mono-layer that endures sufficiently long to protect the walls during the generation of the hydrogen plasma. Thereby, the plasma facing walls, particularly of a dielectric such as alumina, are protected from etching.
1. A passivation method for processing a semiconductor substrate having an exposed low-k dielectric layer having a dielectric constant of less than 3.7 in a plasma processing chamber in the formation of a semiconducting device, comprising the steps of:
injecting a passivating gas comprising water vapor in a non-excited state into the processing chamber containing the substrate and maintaining it in the non-excited state, whereby the passivating gas passivates walls of the processing chamber in the non-excited state;
pumping the processing chamber after the end of the injecting step and before a plasma of a processing gas is excited, whereby the pumping removes the water vapor from the chamber; and
then processing the semiconductor substrate in the processing chamber in the plasma of the processing gas different from the passivating gas.
2. The passivation method of claim 1 , wherein the plasma is a reducing plasma.
3. The passivation method of claim 1 , wherein the processing gas contains hydrogen.
4. The passivation method of claim 1 , wherein the processing gas is chosen from the group consisting of (1) hydrogen and (2) hydrogen and helium.
5. The passivation method of claim 4 , wherein the processing chamber includes a remote plasma source having an output tube connected to an interior of the processing chamber and the water vapor and processing gas are injected into the remote plasma source, wherein the remote plasma source is not activated sufficiently during the injecting step to excite the water vapor into a plasma but is activated sufficiently during the processing step to excite the processing gas into the plasma.
6. The passivation method of claim 5 , wherein said processing chamber further includes a magnetic ion filter disposed and operating as a filter between the remote plasma source and the chamber through which the passivating gas and the processing gas flow and operating to remove ions and pass neutral particles.
7. The passivation method of claim 1 , wherein the processing chamber includes a remote plasma source having an output connected to the interior of the processing chamber, wherein the water vapor and processing gas are injected into the remote plasma source, and wherein the remote plasma source is not sufficiently activated during the injecting step to excite the water vapor into a plasma but is sufficiently activated during the processing step to excite the processing gas into the plasma of claim 1 .
8. The passivation method of claim 7 , wherein the water vapor lengthens a lifetime of the remote plasma source.
9. The passivation method of claim 1 , wherein the processing step cleans a dielectric layer in the semiconducting device.
10. The method of claim 1 , wherein during the injecting step a partial pressure of the water vapor within the processing chamber is less than 10 milliTorr.
11. A plasma processing method, comprising the steps performed for each of a plurality of serially processed substrates of:
inserting a substrate into a plasma processing chamber including a pedestal for supporting the substrate, a gas showerhead opposed to the pedestal, and a remote plasma source having a supply tube connecting its output to a manifold in back of the showerhead;
passing water vapor through the remote plasma source and into the plasma processing chamber without exciting the water vapor into an effective plasma and maintaining the water vapor in an unexcited state in the plasma processing chamber;
pumping the processing chamber after the end of the passing step and before a plasma of a reducing processing gas is excited, whereby the pumping removes the water vapor from the chamber;
then passing the reducing processing gas though the remote plasma source and exciting it into the plasma and thereafter passing the reducing processing gas excited into the plasma into the plasma processing chamber; and
then extinguishing the plasma and removing the substrate from the plasma processing chamber.
12. The method of claim 11 , wherein the reducing processing gas comprises hydrogen and substantially no water vapor nor oxygen.
13. The method of claim 11 , wherein the water vapor lengthens a lifetime of the remote plasma source.
14. The method of claim 11 , wherein during the step of passing water vapor a partial pressure of the water vapor in the plasma processing chamber is less than 10 milliTorr.
15. A method for cleaning a semiconductor substrate having an exposed patterned low-k dielectric layer having a dielectric constant of less than 3.7 in a plasma processing chamber in the formation of a semiconducting device comprising the sequentially performed steps of:
injecting a passivating gas comprising water vapor but no hydrogen through a remote plasma source into the plasma processing chamber containing the substrate while the remote plasma source is not activated and maintaining the passivating gas in an inactivated state in the plasma processing chamber;
interrupting the injecting of the passivating gas while pumping the plasma processing chamber to thereby remove the water vapor; and
then flowing an etching gas comprising hydrogen but no water vapor through the remote plasma source into the plasma processing chamber while the remote plasma source is activated to thereby clean the substrate with a plasma of the etching gas.