Length measurement pattern, semiconductor device, and method of manufacturing a semiconductor device
View Patent ↗A length measurement pattern is used for forming a contact and a via on a diffusion layer and on a lower layer interconnect, respectively, with a photoresist. The length measurement pattern includes a first pattern 16 serving as an object of length measurement in length measurement SEM and a second pattern 17 disposed to be spaced apart from the first pattern 16 and used for positioning and focusing of the length measurement SEM.
1. A length measurement pattern disposed in a resist pattern and used for dimension measurement of said resist pattern by length measurement SEM, wherein said length measurement pattern includes:
a first pattern serving as an object of length measurement by the length measurement SEM; and
a second pattern disposed to be spaced apart from said first pattern and used for positioning and focusing of the length measurement SEM.
2. The length measurement pattern according to claim 1 ,
wherein said first pattern is an isolated pattern made of one pattern.
3. The length measurement pattern according to claim 1 ,
wherein said first pattern is a dense pattern made of a plurality of patterns.
4. The length measurement pattern according to claim 3 ,
wherein a length between said first pattern and said second pattern is five to twenty times as large as a designed value of a via serving as an object of measurement.
5. The length measurement pattern according to claim 1 ,
wherein said first pattern is a dense pattern made of a plurality of patterns, and said second pattern is disposed in said dense pattern.
6. The length measurement pattern according to claim 2 ,
wherein a length between said first pattern and said second pattern is five to twenty times as large as a designed value of a via serving as an object of measurement.
7. The length measurement pattern according to claim 5 ,
wherein a length between said first pattern and said second pattern is five to twenty times as large as a designed value of a via serving as an object of measurement.
8. A semiconductor device comprising a length measurement pattern for forming a contact and a via on a diffusion layer and on a lower layer interconnect, respectively, with a photoresist,
wherein said length measurement pattern includes:
a first pattern serving as an object of length measurement by length measurement SEM; and
a second pattern disposed to be spaced apart from said first pattern and used for positioning and focusing of the length measurement SEM.
9. The semiconductor device according to claim 8 ,
wherein said first pattern is an isolated pattern made of one pattern.
10. The semiconductor device according to claim 9 ,
wherein a length between said first pattern and said second pattern is five to twenty times as large as a designed value of the via serving as an object of measurement.
11. The semiconductor device according to claim 8 ,
wherein said first pattern is a dense pattern made of a plurality of patterns.
12. The semiconductor device according to claim 11 ,
wherein a length between said first pattern and said second pattern is five to twenty times as large as a designed value of the via serving as an object of measurement.
13. The semiconductor device according to claim 8 ,
wherein said first pattern is a dense pattern made of a plurality of patterns, and said second pattern is disposed in said dense pattern.
14. The semiconductor device according to claim 13 ,
wherein a length between said first pattern and said second pattern is five to twenty times as large as a designed value of the via serving as an object of measurement.
15. A method of manufacturing a semiconductor device by forming a contact and a via on a diffusion layer and on a lower layer interconnect, respectively, with a photoresist, wherein said method includes:
focusing length measurement SEM on a second pattern disposed to be spaced apart from a first pattern serving as an object of length measurement by the length measurement SEM and used for positioning and focusing of the length measurement SEM; and
moving a field of view of the length measurement SEM to a region where said first pattern is disposed, so as to perform the length measurement of said first pattern.
16. The method of manufacturing a semiconductor device according to claim 15 ,
wherein said first pattern is an isolated pattern made of one pattern.
17. The method of manufacturing a semiconductor device according to claim 15 ,
wherein said first pattern is a dense pattern made of a plurality of patterns.
18. The method of manufacturing a semiconductor device according to claim 15 ,
wherein said first pattern is a dense pattern made of a plurality of patterns, and said second pattern is disposed in said dense pattern.
19. The method of manufacturing a semiconductor device according to claim 15 ,
wherein a length between said first pattern and said second pattern is five to twenty times as large as a designed value of the via serving as an object of measurement.