Capacitance dielectric layer and capacitor
View Patent ↗A capacitance dielectric layer is provided. The capacitance dielectric layer includes a first dielectric layer, a second dielectric layer and a silicon nitride stacked layer. The silicon nitride stacked layer is disposed between the first dielectric layer and the second dielectric layer. The structure of the capacitance dielectric layer permits an increase in the capacitance per unit area by decreasing the thickness of the capacitance dielectric layer and eliminates the problems of having a raised leakage current and a diminished breakdown voltage.
1. A capacitance dielectric layer, comprising:
a first dielectric layer;
a second dielectric layer; and
a silicon nitride stacked layer disposed between the first dielectric layer and the second dielectric layer, comprising:
a first silicon nitride layer;
a second silicon nitride layer; and
at least a third silicon nitride layer disposed between the first silicon nitride layer and the second silicon nitride layer, wherein the silicon nitride stacked layer comprises only silicon nitride layers.
2. The capacitance dielectric layer of claim 1 , wherein the first dielectric layer and the second dielectric layer is fabricated using a material selected from a group consisting of silicon oxide (SiO), silicon nitride (SiN), silicon carbide (SiC), silicon oxynitride (SiON), silicon carbon nitride (SiCN) and silicon carbon oxide (SiCO).
3. The capacitance dielectric layer of claim 1 , wherein the capacitance dielectric layer further comprises a third dielectric layer disposed between the first dielectric layer and the silicon nitride stacked layer.
4. The capacitance dielectric layer of claim 3 , wherein the third dielectric layer is fabricated using a material selected from a group consisting of silicon oxide, silicon nitride, silicon carbide, silicon oxynitride, silicon carbon nitride and silicon carbon oxide.
5. The capacitance dielectric layer of claim 1 , wherein the capacitance dielectric layer further comprises a fourth dielectric layer disposed between the second dielectric layer and the silicon nitride stacked layer.
6. The capacitance dielectric layer of claim 5 , wherein the fourth dielectric layer is fabricated using a material selected from a group consisting of silicon oxide, silicon nitride, silicon carbide, silicon oxynitride, silicon carbon nitride and silicon carbon oxide.
7. The capacitance dielectric layer of claim 5 , wherein the capacitance dielectric layer further comprises a fifth dielectric layer disposed between the first dielectric layer and the silicon nitride stacked layer.
8. The capacitance dielectric layer of claim 7 , wherein the fifth dielectric layer is fabricated using a material selected from a group consisting of silicon oxide, silicon nitride, silicon carbide, silicon oxynitride, silicon carbon nitride and silicon carbon oxide.
9. A capacitor, comprising:
a first electrode plate;
a first dielectric layer disposed over the first electrode plate;
a second dielectric layer disposed over the first dielectric layer;
a second electrode plate disposed over the second dielectric layer; and
a silicon nitride stacked layer disposed between the first dielectric layer and the second dielectric layer, comprising:
a first silicon nitride layer;
a second silicon nitride layer; and
at least a third silicon nitride layer disposed between the first silicon nitride layer and the second silicon nitride layer, wherein the silicon nitride stacked layer comprises only silicon nitride layers.
10. The capacitor of claim 9 , wherein the first dielectric layer and the second dielectric layer are fabricated using a material selected from a group consisting of silicon oxide, silicon nitride, silicon carbide, silicon oxynitride, silicon carbon nitride and silicon carbon oxide.
11. The capacitor of claim 9 , wherein the capacitor further comprises a third dielectric layer disposed between the first dielectric layer and the silicon nitride stacked layer.
12. The capacitor of claim 9 , wherein the third dielectric layer is fabricated using a material selected from a group consisting of silicon oxide, silicon nitride, silicon carbide, silicon oxynitride, silicon carbon nitride and silicon carbon oxide.
13. The capacitor of claim 9 , wherein the capacitor further comprises a fourth dielectric layer disposed between the second dielectric layer and the silicon nitride stacked layer.
14. The capacitor of claim 13 , wherein the fourth dielectric layer is fabricated using a material selected from a group consisting of silicon oxide, silicon nitride, silicon carbide, silicon oxynitride, silicon carbon nitride and silicon carbon oxide.
15. The capacitor of claim 13 , wherein the capacitor further comprises a fifth dielectric layer disposed between the first dielectric layer and the silicon nitride stacked layer.
16. The capacitor of claim 15 , wherein the fifth dielectric layer is fabricated using a material selected from a group consisting of silicon oxide, silicon nitride, silicon carbide, silicon oxynitride, silicon carbon nitride and silicon carbon oxide.
17. The capacitor of claim 9 , wherein the first electrode plate and the second electrode plate are fabricated using a metallic material.
18. The capacitor of claim 17 , wherein the material constituting the metallic material comprises titanium nitride (TiN), titanium (Ti), aluminum (Al), copper (Cu) or a combination of the above.