Using unstable nitrides to form semiconductor structures
View Patent ↗Incompatible materials, such as copper and nitrided barrier layers, may be adhered more effectively to one another. In one embodiment, a precursor of copper is deposited on the nitrided barrier. The precursor is then converted, through the application of energy, to copper which could not have been as effectively adhered to the barrier in the first place.
1. A method comprising:
forming a second metal nitride on a first metal nitride; and
converting the second metal nitride to a metal, wherein said forming the second metal nitride comprises forming one of a copper or nickel nitride layer.
2. The method of claim 1 including converting said second metal nitride to a metal that adheres to said first material better than if said metal were deposited on said first metal nitride.
3. The method of claim 1 including converting said second metal nitride to said metal by the application of energy to said second material.
4. The method of claim 3 including converting said second metal nitride to said metal by the application of heat.
5. The method of claim 1 including forming said second metal nitride of Cu 3 N, Cu 4 N, or Ni 3 N.
6. The method of claim 1 including forming said first metal nitride of a nitride barrier layer.
7. The method of claim 6 including forming said first metal nitride of titanium or tungsten nitride.
8. The method of claim 1 including selectively converting only a portion of said second metal nitride to a metal.
9. The method of claim 8 including using an electron beam to selectively convert only a portion of said second metal nitride to metal to form a nanowire.
10. The method of claim 1 including forming a second metal nitride of copper nitride by atomic layer deposition or chemical vapor deposition.
11. A method comprising:
forming a second metal nitride on a first metal nitride; and
converting the second metal nitride to a metal, wherein said converting the second metal nitride to said metal further comprises selectively converting only a portion of said second metal nitride to a metal.
12. The method of claim 11 including forming the second metal nitride of a copper or nickel nitride.
13. The method of claim 11 including forming the second metal nitride of copper nitride by atomic layer deposition or chemical vapor deposition.
14. A method comprising:
forming a second metal nitride on a first metal nitride; and
converting the second metal nitride to a metal, wherein said forming the second metal nitride comprises forming a copper nitride layer by atomic layer deposition or chemical vapor deposition.
15. The method of claim 14 including selectively converting only a portion of said second metal nitride to a metal.
16. The method of claim 15 including using an electron beam to selectively convert only a portion of said second metal nitride to metal to form a nanowire.
17. The method of claim 14 including forming said first metal nitride of titanium or tungsten nitride.