Method of fabricating an integrated electronic circuit with programmable resistance cells
View Patent ↗Method of fabricating an integrated electronic circuit with programmable resistance cells, which comprises providing a substrate; forming an inert electrode; forming a solid electrolyte on the inert electrode; forming an interlayer on the solid electrolyte, the interlayer comprising an active electrode material and nitrogen; and forming an active electrode on the interlayer, the active electrode comprising the active electrode material.
1. A method of fabricating an integrated electronic circuit having programmable resistance cells, comprising:
providing a substrate;
forming an inert electrode;
forming a solid electrolyte on the inert electrode;
forming an interlayer on the solid electrolyte, the interlayer comprising an active electrode material and nitrogen; and
after forming the interlayer, forming an active electrode on the interlayer, the active electrode comprising the active electrode material.
2. The method as claimed in claim 1 , wherein the solid electrolyte has a germanium content in a range of 30% to 50%.
3. The method as claimed in claim 1 , wherein the solid electrolyte comprises germanium selenide.
4. The method as claimed in claim 1 , wherein a thickness of the interlayer is between 1.5 nm and 5 nm.
5. The method as claimed in claim 1 , wherein a nitrogen concentration in the interlayer is at least 15%.
6. The method as claimed in claim 1 , wherein forming the interlayer is carried out by means of a sputtering process.
7. The method as claimed in claim 6 , wherein the sputtering process is carried out in a well-defined process atmosphere.
8. The method as claimed in claim 7 , wherein the well-defined process atmosphere comprises argon.
9. The method as claimed in claim 7 , wherein the well-defined process atmosphere comprises at least one of:
nitrogen (N 2 ),
ammonia (NH 3 ), and
nitrogen dioxide (NO 2 ).
10. The method as claimed in claim 1 , wherein the active electrode is formed homogeneously on the interlayer.
11. The method as claimed in claim 1 , wherein forming the interlayer and forming the active electrode are carried out by means of a sputtering process, wherein a process atmosphere comprises a gaseous nitrogen compound while sputtering the interlayer.
12. The method as claimed in claim 1 , wherein the active electrode material comprises silver.
13. A programmable resistance cell formed on a substrate, comprising:
an inert electrode;
a solid electrolyte on the inert electrode;
an interlayer on the solid electrolyte, the interlayer comprising an active electrode material and nitrogen; and
an active electrode on the interlayer such that the interlayer is between the solid electrolyte and the active electrode, the active electrode comprising the active electrode material.
14. The cell as claimed in claim 13 , wherein the solid electrolyte has a germanium content in a range of 30% to 50%.
15. The cell as claimed in claim 13 , wherein the solid electrolyte comprises germanium-selenide.
16. The cell as claimed in claim 13 , wherein a nitrogen concentration in the interlayer is at least 15%.
17. The cell as claimed in claim 13 , wherein a thickness of the interlayer is between 1.5 nm and 5 nm.
18. The cell as claimed in claim 13 , wherein the active electrode is formed homogeneously on the interlayer.
19. The cell as claimed in claim 13 , wherein the active electrode material comprises silver.
20. A programmable resistance cell formed on a substrate, comprising:
an inert electrode;
a solid electrolyte deposited above the inert electrode;
an interlayer deposited above the solid electrolyte, the interlayer comprising an active electrode material and one other material; and
an active electrode deposited above the interlayer such that the interlayer is between the solid electrolyte and the active electrode, the active electrode comprising the active electrode material.