Ion implantation system and control method
View Patent ↗Ion implantation with high brightness, ion beam by ionizing gas or vapor, e.g. of dimers, or decaborane, by direct electron impact ionization adjacent the outlet aperture ( 46, 176 ) of the ionization chamber ( 80; 175 )). Preferably: conditions are maintained that produce a substantial ion density and limit the transverse kinetic energy of the ions to less than 0.7 eV; width of the ionization volume adjacent the aperture is limited to width less than about three times the width of the aperture; the aperture is extremely elongated; magnetic fields are avoided or limited; low ion beam noise is maintained; conditions within the ionization chamber are maintained that prevent formation of an arc discharge. With ion beam optics, such as the batch implanter of FIG. ( 20 ), or in serial implanters, ions from the ion source are transported to a target surface and implanted; advantageously, in some cases, in conjunction with acceleration-deceleration beam lines employing cluster ion beams. Also disclosed are electron gun constructions, ribbon sources for electrons and ionization chamber configurations. Forming features of semiconductor devices, e.g. drain extensions of CMOS devices, and doping of flat panels are shown.
1. An ion source comprising:
an ionization chamber defining an enclosed volume having a gas inlet for receiving a feed gas, said ionization chamber formed with an exit aperture for enabling ions to exit said ionization chamber defining an ion beam, wherein said exit aperture is formed as an elongated slot for generating a ribbon beam;
an electron source for generating electrons in order to ionize said feed gas in said ionization chamber by electron impact; and
a demagnifying lens disposed adjacent said elongated slot for accelerating said ribbon beam.
2. The ion source as recited in claim 1 , wherein said elongated slot is configured to generate the ribbon beam suitable for use in fabricating flat panel displays.
3. The ion source as recited in claim 1 , wherein said elongated slot is at least 800 mm long.
4. An ion source comprising:
an ionization chamber defining an enclosed volume having a gas inlet for receiving a feed gas, said ionization chamber including an ion extraction aperture plate having an exit aperture for enabling ions to exit said ionization chamber defining an ion beam, said ion extraction aperture plate electrically isolated from the rest of said ionization chamber and biased to a negative potential relative to the rest of said ionization chamber , wherein said exit aperture is formed as an elongated slot for generating a ribbon beam; and
an electron source for generating electrons in order to ionize said feed gas in said ionization chamber by electron impact.
5. The ion source as recited in claim 4 , wherein said ion source is configured to generate a molecular ion beam.