Metal-insulator-metal (MIM) capacitor
View Patent ↗A metal-insulator-metal (MIM) capacitor is made according to a copper dual-damascene process. A first copper or copper alloy metal layer if formed on a substrate. A portion of the first metal layer is utilized as the lower plate of the MIM capacitor. An etch stop dielectric layer is used during etching of subsequent layers. A portion of an etch stop layer is not removed and is utilized as the insulator for the MIM capacitor. A second copper or copper alloy metal layer is later formed on the substrate. A portion of the second metal layer is utilized as the upper plate of the MIM capacitor.
1. A metal-insulator-metal (MIM) capacitor, comprising:
a first metal layer comprising copper or copper alloy directly in contact with a dielectric layer, wherein a portion of the first metal layer is utilized as a lower plate of the MIM capacitor;
an etch stop layer directly in contact with dielectric layer and directly on the first metal layer, wherein a portion of the etch stop layer is utilized as an insulator for the MIM capacitor; and
a second metal layer comprising copper or copper alloy directly in contact with a portion of the etch stop layer, wherein a portion of the second metal layer is utilized as an upper plate of the MIM capacitor.
2. The MIM capacitor according to claim 1 , wherein the stop layer includes a silicon nitride layer.
3. The MIM capacitor according to claim 1 , wherein the second metal layer comprises a chemical-mechanical polished surface.
4. The MIM capacitor according to claim 1 , wherein the first metal layer comprises a chemical-mechanical polished surface.
5. A metal-insulator-metal (MIM) capacitor, comprising:
a first dielectric layer directly in contact with a substrate;
a first metal layer made from copper and directly in contact with the first dielectric layer;
a stop layer directly in contact with the first dielectric layer;
a second dielectric layer directly in contact with the stop layer;
a first opening and a second opening in the second dielectric layer that expose portions of the stop layer above a first region and a second region of the first metal layer;
a third opening adjacent the second opening in the second dielectric layer; and
a second metal layer made from copper in the first, second, and third openings over the substrate,
wherein the metal-insulator-metal (MIM) capacitor comprises the first region of the first metal layer, the stop layer, and the filled first opening, and
wherein the filled second opening is a via between the first and second metal layers.
6. The MIM capacitor of claim 5 , wherein the first dielectric layer includes a silicon oxide layer.
7. The MIM capacitor of claim 5 , wherein the stop layer includes a silicon nitride layer.
8. The MIM capacitor of claim 5 , wherein the second dielectric layer includes a silicon oxide layer.
9. The MIM capacitor of claim 5 , wherein the second metal layer comprises chemical-mechanical polished surface.
10. The MIM capacitor of claim 5 , wherein the first metal layer comprises chemical-mechanical polished surface.
11. The MIM capacitor of claim 5 , wherein the first and second dielectric layers are thicker than the stop layer.
12. A metal-insulator-metal (MIM) capacitor, comprising:
a first dielectric layer directly in contact with a substrate, the first dielectric layer having a removed depth-wise portion filled with a copper or copper alloy, thereby forming a first metal layer;
a stop layer directly in contact with the first dielectric layer and the first metal layer; and
a second dielectric layer directly in contact with the stop layer, the second dielectric layer having a first opening and a second opening that expose portions of the stop layer above a first region and a second region of the first metal layer, respectively, wherein the first and second openings are filled with a copper or copper alloy, thereby forming a second metal layer;
wherein a metal-insulator-metal (MIM) capacitor is by the first region of the first metal layer, the stop layer, and the filled first opening, and
wherein the filled second opening is a via between the first and second metal layers.
13. The MIM capacitor of claim 12 , wherein the first dielectric layer includes a silicon oxide layer.
14. The MIM capacitor of claim 12 , wherein the stop layer includes a silicon nitride layer.
15. The MIM capacitor of claim 12 , wherein the second dielectric layer includes a silicon oxide layer.
16. The MIM capacitor of claim 12 , wherein the second metal layer comprises chemical-mechanical polished surface.
17. The MIM capacitor of claim 12 , wherein said first metal layer comprises chemical-mechanical polished surface.
18. The MIM capacitor of claim 12 , wherein the first and second dielectric layers are thicker than the stop layer.