Semiconductor chip
View Patent ↗A semiconductor chip 100 includes a semiconductor substrate (not shown), and a stacked film 150 formed over the semiconductor substrate, which includes carbon-containing insulating films such as a first interlayer insulating film 106 , and carbon-free insulating films such as an underlying layer 102 and a top cover film 124 . The end faces of the carbon-free insulating films herein are located on the outer side of the end faces of the carbon-containing insulating films. The carbon composition of the carbon-containing insulating films is lowered in the end portions thereof than in the inner portions. The film density of the carbon-containing insulating films is raised in the end portions thereof than in the inner portions.
1. A semiconductor chip comprising:
a semiconductor substrate; and a stacked film having a side edge, formed over said semiconductor substrate, comprising a carbon-containing insulating film and a carbon-free insulating film, and end face at said side edge of said carbon-free insulating film extending beyond an end face at said side edge of said carbon-containing insulating film,
wherein said carbon-containing insulating film has a lower carbon content in an end portion of said carbon-containing insulating film than in an inner portion thereof.
2. The semiconductor chip as claimed in claim 1 , wherein said carbon-containing insulating film includes, in the vicinity of an end portion thereof, a region in which the carbon content increases towards an inner portion thereof.
3. The semiconductor chip as claimed in claim 1 , wherein said carbon-containing insulating film has a higher film density in an end portion thereof than in an inner portion thereof.
4. The semiconductor chip as claimed in claim 1 , wherein said carbon-containing insulating film includes, in the vicinity of the end portion thereof, a region in which the film density decreases towards the inner portion thereof.
5. The semiconductor chip as claimed in claim 1 , further comprising another insulating film provided in contact with said carbon-containing insulating film,
wherein said carbon-containing insulating film has a lower carbon content in an end portion thereof that is in contact with said another insulating film than in an inner portion thereof in contact with said another insulating film.
6. The semiconductor chip as claimed in claim 1 , further comprising another insulating film provided in contact with said carbon containing insulating film,
wherein said carbon-containing insulating film has a higher film density in an end portion thereof that is in contact with said another insulating film than in an inner portion thereof in contact with said another insulating film.
7. The semiconductor chip as claimed in claim 5 , wherein said another insulating film is composed of SiCN or SiC.
8. The semiconductor chip as claimed in claim 6 , wherein said another insulating film is composed of SiCN or SiC.
9. The semiconductor chip as claimed in claim 1 , wherein said carbon-containing insulating film is composed of SiOC, SiCN or SiC.
10. A semiconductor chip comprising:
a semiconductor substrate; and
a stacked film, formed over said semiconductor substrate, comprising a carbon containing insulating film, said carbon-containing insulating film having a lower carbon content in an end portion thereof than in an inner portion thereof.
11. The semiconductor chip as claimed in claim 10 , wherein said carbon containing insulating film includes a region in which the carbon content increases from an end portion of the carbon containing insulating film towards an inner portion thereof.
12. The semiconductor chip as claimed in claim 10 , wherein said carbon containing insulating film is composed of SiOC, SiCN or SiC.
13. The semiconductor chip as claimed in claim 10 , further comprising another insulating film provided in contact with said carbon-containing insulating film,
wherein said carbon-containing insulating film has a lower carbon content in an end portion thereof that is in contact with said another insulating film than in an inner portion thereof that is in contact with said another insulating film.
14. The semiconductor chip as claimed in claim 13 , wherein said another insulating film is composed of SiCN or SiC.
15. A semiconductor chip comprising:
a semiconductor substrate; and
a stacked film, formed over said semiconductor substrate, comprising a carbon-containing insulating film, said carbon-containing insulating film having a higher film density in an end portion thereof than in an inner portion thereof.
16. The semiconductor chip as claimed in claim 15 , wherein said carbon-containing insulating film includes a region in which the film density decreases from an end portion thereof towards the inner portion thereof.
17. The semiconductor chip as claimed in claim 15 , wherein said carbon-containing insulating film is composed of SiOC, SiCN or SiC.
18. The semiconductor chip as claimed in claim 15 , further comprising another insulating film provided in contact with said carbon-containing insulating film,
wherein said carbon-containing insulating film has an increased film density in an end portion thereof that is in contact with said another insulating film than in an inner portion thereof that is in contact with said another insulating film.
19. The semiconductor chip as claimed in claim 18 , wherein said another insulating film is composed of SiCN or SiC.