Semiconductor device and method of manufacturing a gate stack
View Patent ↗The semiconductor device includes a semiconductor substrate, a gate insulating film formed in contact with an upper side of the semiconductor substrate, and a gate electrode formed on the upper side of the gate insulating film and made of metal nitride or metal nitride silicide. A buffer layer for preventing diffusion of nitrogen and silicon is interposed between the gate insulating film and the gate electrode. Preferably, the buffer layer has a thickness of 5 nm or less. In the case where gate electrode contains Ti elements, and the gate insulating film contains Hf elements, the buffer layer preferably contains a titanium film.
1. A method of manufacturing a semiconductor device, comprising the steps of:
forming a gate structure on a surface of a semiconductor substrate, the gate structure including
a gate insulation film having hafnium elements and oxygen elements,
a gate electrode having a titanium nitride film, and
a layer being provided between the gate insulation film and the gate electrode, and having a titanium film not including nitrogen elements, oxygen elements and silicon elements;
forming a source region and a drain region in the surface of the semiconductor substrate, the gate structure located above a region between the source and drain; and
performing a heat treatment on the semiconductor substrate after forming the gate structure.
2. The method of manufacturing the semiconductor device according to claim 1 , wherein the gate structure includes an insulation film being in direct contact with the gate electrode after performing the heat treatment, the insulation film having hafnium elements, titanium elements and the oxygen elements.
3. The method of manufacturing the semiconductor device according to claim 1 , wherein the titanium film having a first surface being in direct contact with the titanium nitride film and a second surface being in direct contact with the gate insulation film.
4. The method of manufacturing the semiconductor device according to claim 1 , wherein the gate insulation film does not include titanium elements.
5. The method of manufacturing the semiconductor device according to claim 4 , wherein the gate insulation film does not include nitrogen elements.
6. The method of manufacturing the semiconductor device according to claim 5 , wherein the gate insulation film does not include silicon elements.
7. The method of manufacturing the semiconductor device according to claim 1 , wherein the layer has a thickness of 5 nm or less.