Thin film magnetic memory device reducing a charging time of a data line in a data read operation
View Patent ↗During data reading, a sense enable signal is activated to start charging of a data line prior to formation of a current path including the data line and a selected memory cell in accordance with row and column selecting operations. Charging of the data line is completed early so that it is possible to reduce a time required from start of the data reading to such a state that a passing current difference between the data lines reaches a level corresponding to storage data of the selected memory cell, and the data reading can be performed fast.
1. A thin film magnetic memory device comprising:
a plurality of memory cells each having one of first and second electric resistances corresponding to magnetically written storage data;
a reference cell having an electric resistance intermediate between said first and second electric resistances;
a first data line being electrically coupled between first and second voltages via the selected memory cell corresponding to a selected address among said plurality of memory cells during data reading;
a second data line being electrically coupled between said first and second voltages via said reference cell during said data reading;
a level control circuit provided corresponding to said first and second data lines for changing levels of said first and second data lines to predetermined levels during said data reading;
a data read circuit for performing a data read operation in accordance with a difference between passing currents of said first and second data lines; and
a signal line for instructing voltage change of said predetermined level to said level control circuit, wherein
said level control circuit includes capacitors each arranged between said first or second data line and an internal node, and said internal node is electrically coupled to said signal line.
2. A thin film magnetic memory device comprising:
a plurality of memory cells each having one of first and second electric resistances corresponding to magnetically written storage data;
a reference cell having an electric resistance intermediate between said first and second electric resistances;
a first data line being electrically coupled between first and second voltages via the selected memory cell corresponding to a selected address among said plurality of memory cells during data reading;
a second data line being electrically coupled between said first and second voltages via said reference cell during said data reading;
a level control circuit provided corresponding to said first and second data lines for changing levels of said first and second data lines to predetermined levels during said data reading;
a data read circuit for performing a data read operation in accordance with a difference between passing currents of said first and second data lines; and
a column select line for transmitting a result of column selection, wherein
said level control circuit includes capacitors each arranged between said first or second data line and an internal node, and said internal node being electrically coupled to said column select line.
3. A thin film magnetic memory device comprising:
a plurality of memory cells each having one of first and second electric resistances corresponding to magnetically written storage data;
a reference cell having an electric resistance intermediate between said first and second electric resistances;
a first data line being electrically coupled between first and second voltages via the selected memory cell corresponding to a selected address among said plurality of memory cells during data reading;
a second data line being electrically coupled between said first and second voltages via said reference cell during said data reading;
a level control circuit provided corresponding to said first and second data lines for changing levels of said first and second data lines to predetermined levels during said data reading;
a data read circuit for performing a data read operation in accordance with a difference between passing currents of said first and second data lines; and
a clamp circuit provided corresponding to each of said first and second lines for maintaining voltage levels of said first and second data lines at said predetermined level during said data reading.
4. The thin film magnetic memory device according to claim 3 , wherein
said clamp circuit includes a diode element arranged between a predetermined voltage and said first and second data lines.
5. The thin film magnetic memory device according to claim 3 , wherein
said clamp circuit includes a field-effect transistor arranged between a predetermined voltage and each of said first and second data lines, and
said field-effect transistor has a gate electrically coupled to corresponding one of said first and second data lines.