IP Library › Assignment 043668/0291
Patent Assignment
Reel/Frame 043668/0291

Assignment of Assignor's Interest

Recorded: 2017-08-24 Received: 2017-08-24 Pages: 12
Assignor
Assignee
RENESAS SYSTEM DESIGN CO., LTD.
5-20-1 JOSUIHON-CHO, KODAIRA, TOKYO, JPX, 187-8588, JAPAN
Covered Properties (69)
Motor
Application: 15/713,253 →
Thin Film Magnetic Memory Device Reducing a Charging Time of a Data Line in a Data Read Operation
Application: 11/374,062 →
Protective Circuit for Semiconductor Device
Application: 11/003,332 →
Semiconductor Memory Device
Application: 10/822,717 →
Nonvolatile Memory Device with Sense Amplifier Securing Reading Margin
Application: 10/455,479 →
Motor Driving Circuit
Application: 10/453,738 →
Scan Path Timing Optimizing Apparatus Determining Connection Order of Scan Path Circuits to Realize Optimum Signal Timings
Application: 10/445,832 →
Thin-Film Magnetic Memory Device Suppressing Parasitic Capacitance Applied to Data Line or the Like
Application: 10/397,352 →
Thin Film Magnetic Memory Device Executing Self-Reference Type Data Read
Application: 10/383,570 →
Non-Volatile Memory Device Capable of Generating Accurate Reference Current for Determination
Application: 10/364,329 →
Semiconductor Integrated Circuit Device Having Operation Test Function
Application: 10/354,139 →
Pipeline Nonvolatile Memory Device with Multi-Bit Parallel Read and Write Suitable for Cache Memory
Application: 10/353,913 →
Motor Driving Device for Supplying Driving Current to a Three-Phase Motor Through Output Transistors
Application: 10/351,442 →
Clock Generating Circuit
Application: 10/349,033 →
Memory System
Application: 10/318,097 →
Thin Film Magnetic Memory Device Having Dummy Cell
Application: 10/299,776 →
Semiconductor Device Having Standby Mode and Active Mode
Application: 10/279,069 →
Electrostatic Breakdown Prevention Circuit for Semiconductor Device
Application: 10/267,876 →
Clamping Apparatus
Application: 10/264,354 →
Thin Film Magnetic Memory Device Provided with a Dummy Cell for Data Read Reference
Application: 10/260,397 →
Thin Film Magnetic Memory Device Reducing a Charging Time of a Data Line in a Data Read Operation
Application: 10/259,471 →
Semiconductor Storage Unit
Application: 10/253,512 →
Semiconductor Memory Device and Its Testing Method
Application: 10/224,499 →
Defect Inspecting Device for Substrate to Be Processed and Method of Manufacturing Semiconductor Device
Application: 10/219,292 →
Semiconductor Memory Device Having a Plurality of Signal Lines for Writing and Reading Data
Application: 10/209,884 →
Nonvolatile Semiconductor Memory Device That Can Suppress Effect of Threshold Voltage Variation of Memory Cell Transistor
Application: 10/200,773 →
Semiconductor Integrated Circuit with Voltage Down Converter Adaptable for Burn-in Testing
Application: 10/201,080 →
Semiconductor Memory Device Capable of Applying Stress Voltage to Bit Line Pair
Application: 10/191,498 →
Thin Film Magnetic Memory Device with High-Accuracy Data Read Structure Having a Reduced Number of Circuit Elements
Application: 10/190,668 →
Nonvolatile Semiconductor Storage Device Having a Shortened Time Required for a Data Erasing Operation and Data Erasing Method Thereof
Application: 10/187,981 →
Apparatus for Reducing Motor Driving Noise and Method for Generating Motor Driving Noise Reducing Signal
Application: 10/167,078 →
Gas Analyzing Method and Gas Analyzer for Semiconductor Treater
Application: 10/162,882 →
Power Supply Control Circuit for Use in Semiconductor Storage Device
Application: 10/162,200 →
Spike Current Reducing Circuit
Application: 10/160,238 →
Semiconductor Memory Device Capable of Rewriting Data Signal
Application: 10/138,266 →
Centrifugal Dryer, Manufacturing Method for Semiconductor Device and Semiconductor Manufacturing Apparatus
Application: 10/131,246 →
Semiconductor Integrated Circuit Device and Semiconductor Memory Device Reprogrammable After Assembly
Application: 10/120,442 →
Semiconductor Memory Device Including Plurality of Global Data Lines in Parallel Arrangement with Low Parasitic Capacitance, and Fabrication Method Thereof
Application: 10/118,126 →
Semiconductor Integrated Circuit Device with Internal Power Supply Potential Generation Circuit
Application: 10/095,080 →
Semiconductor Memory Device
Application: 10/077,833 →
Nonvolatile Semiconductor Memory Device Capable of Suppressing Reduction of Bit Line Potential in Write-Back Operation and Erase Method
Application: 10/056,107 →
Semiconductor Memory Device Having a Column Select Line Transmitting a Column Select Signal
Application: 10/050,131 →
Semiconductor Memory Device
Application: 09/988,173 →
Semiconductor Memory Device Capable of Reducing Leakage Current Flowing into Substrate
Application: 09/987,277 →
A Semiconductor Device with a Well Wherein a Scaling Down of the Layout Is Achieved
Application: 09/961,190 →
Microcomputer with Built-in Programmable Nonvolatile Memory
Application: 09/948,042 →
Nonvolatile Semiconductor Memory and Automatic Erasing/Writing Method Thereof
Application: 09/931,243 →
Pll Synthesizer That Uses a Fractional Division Value
Application: 09/885,927 →
Substrate Bias Voltage Generating Circuit
Application: 09/879,914 →
Magnetic Record Writing Circuit
Application: 09/878,331 →
Nonvolatile Semiconductor Memory Device Having Reduced Erase Time and Method of Erasing Data of the Same
Application: 09/845,300 →
Semiconductor Integrated Circuit Device Having Efficiently Arranged Link Program Circuitry
Application: 09/843,690 →
Semiconductor Memory Device with Internal Power Supply Potential Genaration Circuit
Application: 09/827,897 →
Semiconductor Device Including a Fuse Circuit in Which the Electric Current Is Cut Off After Blowing So as to Prevent Voltage Fall
Application: 09/820,853 →
Circuit for Amplifying and Outputting Audio Signals
Application: 09/810,505 →
Potential Detecting Circuit Having Wide Operating Margin and Semiconductor Device Including the Same
Application: 09/809,212 →
Read Amplifier Circuit for High-Speed Reading and Semiconductor Memory Device Employing the Read Amplifier Circuit
Application: 09/791,772 →
Semiconductor Memory Device Including Plurality of Global Data Lines in Parallel Arrangement with Low Parasitic Capacitance, and Fabrication Method Thereof
Application: 09/781,238 →
Multi-Power Semiconductor Integrated Circuit Device
Application: 09/780,477 →
Semiconductor Integrated Circuit Device Capable of Ensuring Reliability of Transistor Driving High Voltage
Application: 09/778,261 →
Semiconductor Memory Device Having Reduced Current Consumption at Internal Boosted Potential
Application: 09/773,621 →
Mold for Resin-Sealing of Semiconductor Devices
Application: 09/770,666 →
Voltage Downconverter Circuit Capable of Reducing Current Consumption While Keeping Response Rate
Application: 09/764,129 →
Internal Voltage Generation Circuit
Application: 09/760,639 →
Semiconductor Device with Extra Control Wiring for Improving Breakdown Voltage.
Application: 09/760,800 →
Semiconductor Merged Logic and Memory Capable of Preventing an Increase in an Abnormal Current During Power-Up
Application: 09/759,315 →
Semiconductor Integrated Circuit Device Capable of Stably Generating Internal Voltage Independent of an External Power Supply Voltage
Application: 09/759,321 →
Semiconductor Integrated Circuit Device Having Circuit Generating Reference Voltage
Application: 09/758,273 →
Semiconductor memory device with readily changeable memory capacity
Application: 09/754,121 →