Pattern formation method and exposure system
After forming a resist film made from a chemically amplified resist material, pattern exposure is carried out by irradiating the resist film with exposing light while supplying, between a projection lens and the resist film, a solution of water (having a refractive index of 1.44) that includes an antifoaming agent and is circulated and temporarily stored in a solution storage. After the pattern exposure, the resist film is subjected to post-exposure bake, and the resultant resist film is developed with an alkaline developer. Thus, a resist pattern made of an unexposed portion of the resist film can be formed in a good shape.
1 - 9 . (canceled)
10 . An exposure system comprising:
a lens for projecting, on a resist film, exposing light having passed through a mask;
a solution storage provided between said resist film and said lens for temporarily storing a solution through which said exposing light having been projected by said lens passes before reaching said resist film;
an inlet for allowing said solution to flow into said solution storage; and
an outlet for allowing said solution temporarily stored in said solution storage to flow out of said solution storage.
11 . The exposure system of claim 10 ,
wherein said outlet has a smaller cross-sectional area than said inlet.