IP Library Granted Patent US 7,286,428
Granted Patent B2
US 7,286,428 · App. 11/377,683 · Granted Oct 23, 2007

Offset compensated sensing for magnetic random access memory

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Quick Facts
Patent No.
US 7,286,428
App. No.
11/377,683
Granted
Oct 23, 2007
Kind
B2
Abstract

An offset compensated memory element voltage supply including a differential amplifier with a compensation circuit, and a transistor with a gate connected to the output of the differential amplifier. The compensation circuit of the differential amplifier includes a compensation capacitor that stores a compensation voltage during a calibration phase, and applies the stored compensation voltage to a compensation input of the compensation circuit of the amplifier during a measurement phase. Feedback from a source of the transistor controls the output of the differential amplifier to maintain a standard voltage across a resistive memory element connected to the source during measurement of the resistance of the resistive memory element, and the compensation circuit improves the accuracy of the voltage across the resistive memory element by compensating for an offset voltage of the differential amplifier.

Claims (15)

1. A method of applying a voltage to a resistive memory element comprising:

controlling a current applied to said resistive memory element using a transistor during a measuring time period, said transistor having a source connected to a first power trace at a first potential voltage, a gate switchingly connected to an output of a differential amplifier, and a drain connected to a column line, said column line connected to one terminal of said resistive memory element and switchingly connected to an inverting signal input of said differential amplifier;

supplying a reference voltage to a non-inverting signal input of said differential amplifier;

during a first-time period, isolating said output of said differential amplifier from said gate of said transistor;

during said first-time period, connecting said output of said differential amplifier to a non-inverting calibration input of said differential amplifier, and to a first terminal of a first compensation capacitor;

during said first-time period, connecting an inverting calibration input of said differential amplifier to a first terminal of a second compensation capacitor, to the inverting signal input of said differential amplifier, to the non-inverting signal input of said differential amplifier, and to a source of said reference voltage;

allowing said first and second capacitors to charge to first and second voltages respectively; and

during said measuring time period connecting said output of said differential amplifier to said gate of said transistor and applying said first and second voltages to said inverting and non-inverting calibration inputs of said differential amplifier respectively.

2. A method of sensing resistance comprising:

applying a reference voltage to a non-inverting input of a first differential amplifier, said first differential amplifier exhibiting an offset voltage;

applying a sensing voltage to one end of a resistor, said sensing voltage responsive to an output signal of said differential amplifier;

feeding said sensing voltage back into an inverting input of said first differential amplifier;

sinking a portion of said output signal into an output of a second differential amplifier, said second differential amplifier having a first input held at a first potential by a first capacitor and a second input held at a second potential by a second capacitor;

pre-charging said first and second capacitors to first and second voltages, said first and second voltages adapted to cause said second amplifier to change said output signal by an amount equal and opposite to said offset voltage of said first differential amplifier.

3. A method according to claim 2 , wherein said pre-charging includes switchingly connecting said inverting and non-inverting inputs of said first differential amplifier to said reference voltage.

Assignments (7)
RELEASE OF SECURITY INTEREST Recorded Nov 12, 2019
From: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
To: MICRON TECHNOLOGY, INC.; MICRON SEMICONDUCTOR PRODUCTS, INC.
Reel/Frame 051028/0001 →
RELEASE OF SECURITY INTEREST Recorded Oct 9, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT
To: MICRON TECHNOLOGY, INC.
Reel/Frame 050937/0001 →
RELEASE OF SECURITY INTEREST Recorded Aug 23, 2018
From: U.S. BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT
To: MICRON TECHNOLOGY, INC.
Reel/Frame 047243/0001 →
SECURITY INTEREST Recorded Jul 13, 2018
From: MICRON TECHNOLOGY, INC.; MICRON SEMICONDUCTOR PRODUCTS, INC.
To: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
Reel/Frame 047540/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REPLACE ERRONEOUSLY FILED PATENT #7358718 WITH THE CORRECT PATENT #7358178 PREVIOUSLY RECORDED ON REEL 038669 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY INTEREST. Recorded Jun 8, 2017
From: MICRON TECHNOLOGY, INC.
To: U.S. BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT
Reel/Frame 043079/0001 →
PATENT SECURITY AGREEMENT Recorded Jun 2, 2016
From: MICRON TECHNOLOGY, INC.
To: MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT
Reel/Frame 038954/0001 →
SECURITY INTEREST Recorded May 12, 2016
From: MICRON TECHNOLOGY, INC.
To: U.S. BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT
Reel/Frame 038669/0001 →