Indium oxide powder and method for producing same
View Patent ↗At least one basic precipitant selected from the group consisting of NaOH, KOH, NH 4 OH, NH 3 , NH 4 HCO 3 and (NH 4 ) 2 CO 3 is added to an indium salt solution, which contains 0.1 to 3 M of indium, in an adding time of not longer than 24 hours, while the solution is maintained at a temperature of 5 to 95° C. until the equivalent of the basic precipitant reaches an equivalent of 0.5 to 3. Then, a precipitate obtained from the solution by a solid-liquid separation is dried and calcined at a temperature of 570 to 780° C. in an non-oxidizing atmosphere which contains ammonia gas and water vapor.
1. A method for producing an indium oxide powder, the method comprising the steps of:
adding a basic precipitant to an indium salt solution to produce a precipitate;
separating the precipitate by a solid-liquid separation;
drying the separated precipitate; and
calcining the dried precipitate in an inert gas atmosphere which contains a reducing gas and water vapor,
wherein the concentration of indium in said indium salt solution is in the range of from 0.01 M to 3 M, and said basic precipitant is added to said indium salt solution in an amount of 0.5 to 3 equivalents per equivalent of the indium salt of said indium salt solution in an adding time of not longer than 24 hours while the solution is maintained at a temperature of 5 to 95° C., said dried precipitate being calcined at a temperature of 570 to 780° C.
2. A method for producing an indium oxide powder as set forth in claim 1 , wherein said reducing gas is at least one selected from the group consisting of hydrogen gas and ammonia gas.
3. A method for producing an indium oxide powder as set forth in claim 1 , wherein said indium salt solution is an indium salt solution of at least one selected from the group consisting of In 2 (C 2 O 4 ) 3 , InCl 3 , In(NO 3 ) 3 and In 2 (SO 4 ) 3 .
4. A method for producing an indium oxide powder as set forth in claim 1 , wherein said basic precipitant is at least one selected from the group consisting of NaOH, KOH, NH 4 OH, NH 3 gas, NH 4 HCO 3 and (NH 4 ) 2 CO 3 .
5. A method for producing an indium oxide powder containing a tin oxide powder, the method comprising the steps of:
adding a basic precipitant to an indium salt solution to produce a precipitate;
separating the precipitate by a solid-liquid separation;
drying the separated precipitate;
calcining the dried precipitate in an inert gas atmosphere to obtain an indium oxide powder; and
mixing 80 to 95% by weight of the indium oxide powder with 5 to 20% by weight of a tin oxide powder,
wherein the concentration of indium in said indium salt solution is in the range of from 0.01 M to 3 M, and said basic precipitant is added to said indium salt solution in an amount of 0.5 to 3 equivalents per equivalent of the indium salt of said indium salt solution in an adding time of not longer than 24 hours while the solution is maintained at a temperature of 5 to 95° C., said dried precipitate being calcined at a temperature of 570 to 780° C.
6. A method for producing an ITO target, the method comprising the steps of:
adding a basic precipitant to an indium salt solution to produce a precipitate;
separating the precipitate by a solid-liquid separation;
drying the separated precipitate;
calcining the dried precipitate in an inert gas atmosphere to obtain an indium oxide powder;
mixing 80 to 95% by weight of the indium oxide powder with 5 to 20% by weight of a tin oxide powder;
pressing a mixture of the indium oxide powder and the tin oxide powder; and
burning the pressed mixture at a temperature of 1200 to 1600° C.,
wherein the concentration of indium in said indium salt solution is in the range of from 0.01 M to 3 M, and said basic precipitant is added to said indium salt solution in an amount of 0.5 to 3 equivalents per equivalent of the indium salt of said indium salt solution in an adding time of not longer than 24 hours while the solution is maintained at a temperature of 5 to 95° C., said dried precipitate being calcined at a temperature of 570 to 780° C.
7. A method for producing an ITO target as set forth in claim 6 , wherein an ITO target obtained by the burning has a sintered density of 7.04 to 7.15 g/cm 3 .