Power supplies for driving H-bridges
An apparatus includes an integrated circuit that includes low side power supply circuitry that provides an output voltage for H-bridge circuitry. The low side power supply circuitry includes one transistor that provides one current to the output of the low side power supply circuitry in response to the output voltage of the low side power supply circuitry dropping below a quiescent level. The low side power supply circuitry also includes a second transistor that controls the conduction state of a third transistor, based at least in part, upon the first transistor providing the first current to the output of the low side power supply circuitry. The third transistor provides a second current to the output of the low side power supply circuitry.
1. An apparatus, comprising:
an integrated circuit comprising:
low side power supply circuitry configured to provide an output voltage for H-bridge circuitry, wherein the low side power supply circuitry includes:
a first transistor configured to provide a first current to the output of the low side power supply circuitry in response to the output voltage of the low side power supply circuitry dropping below a quiescent level; and
a second transistor configured to control the conduction state of a third transistor, based at least in part, upon the first transistor providing the first current to the output of the low side power supply circuitry, wherein the third transistor is configured to provide a second current to the output of the low side power supply circuitry.
2. The apparatus of claim 1 , wherein the integrated circuit further comprises:
high side power supply circuitry configured to provide an output voltage for the H-bridge circuitry, wherein the high side power supply circuitry includes:
a fourth transistor configured to draw a first current from the output of the high side power supply circuitry in response to the output voltage of the high side power supply circuitry exceeding a quiescent level; and
a fifth transistor configured to control the conduction state of a sixth transistor, based at least in part, upon the fourth transistor drawing the first current from the output of the high side power supply circuitry, wherein the sixth transistor is configured to draw a second current from the output of the high side power supply circuitry.
3. The apparatus of claim 1 , wherein the first transistor includes an n-channel field-effect transistor.
4. The apparatus of claim 2 , wherein the fourth transistor includes a p-channel field-effect transistor.
5. The apparatus of claim 1 , wherein the first transistor includes a bipolar transistor.
6. The apparatus of claim 2 , wherein the fourth transistor includes a bipolar transistor.
7. The apparatus of claim 1 , wherein the low side power supply circuitry is configured to provide a voltage signal to a low side driver.
8. The apparatus of claim 2 , wherein the high side power supply circuitry is configured to provide a voltage signal to a high side driver.
9. The apparatus of claim 1 , wherein the output conductance of the low side power supply circuitry is based on at least the transconductance of the first transistor and the transconductance of the third transistor.
10. The apparatus of claim 2 , wherein the output conductance of the high side power supply circuitry is based on at least the transconductance of the fourth transistor and the transconductance of the sixth transistor.
11. An apparatus, comprising:
an integrated circuit comprising:
high side power supply circuitry configured to provide an output voltage for H-bridge circuitry, wherein the high side power supply circuitry includes:
a first transistor configured to draw a first current from the output of the high side power supply circuitry in response to the output voltage of the high side power supply circuitry exceeding a quiescent level; and
a second transistor configured to control the conduction state of a third transistor, based at least in part, upon the first transistor drawing the first current from the output of the high side power supply circuitry, wherein the third transistor is configured to draw a second current from the output of the high side power supply circuitry.
12. The apparatus of claim 11 , wherein the integrated circuit further comprises:
low side power supply circuitry configured to provide an output voltage for the H-bridge circuitry, wherein the low side power supply circuitry includes:
a fourth transistor configured to provide a first current to the output of the low side power supply circuitry in response to the output voltage of the low side power supply circuitry dropping below a quiescent level; and
a fifth transistor configured to control the conduction state of a sixth transistor, based at least in part, upon the fourth transistor providing the first current to the output of the low side power supply circuitry, wherein the sixth transistor is configured to provide a second current to the output of the low side power supply circuitry.
13. The apparatus of claim 11 , wherein the first transistor includes a p-channel field-effect transistor.
14. The apparatus of claim 12 , wherein the fourth transistor includes an n-channel field-effect transistor.
15. An apparatus, comprising:
an integrated circuit comprising:
low side power supply circuitry configured to provide an output voltage for H-bridge circuitry, wherein the low side power supply circuitry includes:
a first transistor configured to provide a first current to the output of the low side power supply circuitry in response to the output voltage of the low side power supply circuitry dropping below a quiescent level, and
a second transistor configured to control the conduction state of a third transistor, based at least in part, upon the first transistor providing the first current to the output of the low side power supply circuitry, wherein the third transistor is configured to provide a second current to the output of the low side power supply circuitry; and
high side power supply circuitry configured to provide an output voltage for the H-bridge circuitry, wherein the high side power supply circuitry includes:
a fourth transistor configured to draw a first current from the output of the high side power supply circuitry in response to the output voltage of the high side power supply circuitry exceeding a quiescent level, and
a fifth transistor configured to control the conduction state of a sixth transistor based, at least in part, upon the fourth transistor drawing the first current from the output of the high side power supply circuitry, wherein the sixth transistor is configured to draw a second current from the output of the high side power supply circuitry.
16. The apparatus of claim 15 , wherein the first transistor includes an n-channel field-effect transistor.
17. The apparatus of claim 15 , wherein the fourth transistor includes a p-channel field-effect transistor.
18. The apparatus of claim 15 , wherein the first transistor includes a bipolar transistor.
19. The apparatus of claim 15 , wherein the fourth transistor includes a bipolar transistor.
20. The apparatus of claim 15 , wherein the output conductance of the low side power supply circuitry is based on at least the sum of the transconductance of the first transistor and the transconductance of the third transistor.
21. A method, comprising:
a first transistor, sending a first current to an output of a low side power supply circuitry in response to the output voltage of the low side power supply circuitry dropping below a quiescent level, wherein the low side power supply circuitry is configured to provide an output voltage for H-bridge circuitry; and
a second transistor, sending a second current to the output of the low side power supply circuitry, based at least in part, upon the first transistor sending the first current to the output of the low side power supply circuitry, wherein a third transistor controls the conduction state of the second transistor.
22. The method of claim 21 , further comprising:
a fourth transistor, drawing a first current from the output of a high side power supply circuitry in response to the output voltage of the high side power supply circuitry exceeding a quiescent level, wherein the high side power supply circuitry is configured to provide an output voltage for the H-bridge circuitry; and
a fifth transistor, drawing a second current from the output of the high side power supply circuitry, based at least in part, upon the fourth transistor drawing the first current from the output of the high side power supply circuitry, wherein a sixth transistor controls the conduction state of the fifth transistor.