Micro sample heating apparatus and method of making the same

1. A micro sample heating apparatus, comprising:

a substrate;

a micro heating device disposed on a first surface of the substrate, wherein the micro heating device comprises a metal layer disposed on the first surface of the substrate, and a metal wiring layer disposed on the metal layer;

a cavity having a vertical sidewall and corresponding to the micro heating device positioned in a second surface of the substrate; and

an isolation structure positioned on the second surface of the substrate, the isolation structure having an opening corresponding to the cavity;

wherein the cavity and the opening form a sample room.

2. The micro sample heating apparatus of claim 1 , wherein the substrate is a silicon substrate.

3. The micro sample heating apparatus of claim 1 , further comprising an insulating layer disposed between the first surface of the substrate and the micro heating device.

4. The micro sample heating apparatus of claim 1 , wherein the cavity penetrates through the substrate.

5. The micro sample heating apparatus of claim 1 , wherein the isolation structure comprises glass.

6. A method of fabricating micro sample heating apparatuses, comprising:

providing a substrate, and forming a plurality of micro heating devices on a first surface of the substrate;

forming a plurality of cavities corresponding to the micro heating devices in a second surface of the substrate, each cavity having a vertical sidewall;

providing an isolation structure having a plurality of openings; and

bonding the isolation structure to the second surface of the substrate, each opening being corresponding to each cavity;

wherein each cavity and each opening corresponding to the cavity form a sample room.

7. The method of claim 6 , wherein forming the micro heating devices comprises:

forming a metal layer on the first surface of the substrate; and

forming a metal wiring layer on the metal layer.

8. The method of claim 7 , wherein the metal layer and the metal wiring layer are formed by lift-off techniques.

9. The method of claim 6 , wherein the substrate is a silicon substrate.

10. The method of claim 6 , further comprising forming an insulating layer on the first surface of the substrate prior to forming the micro heating devices.

11. The method of claim 10 , wherein the cavities are formed by a deep etching process.

12. The method of claim 11 , wherein the insulating layer is an etching stop layer.

13. The method of claim 6 , wherein the isolation structure comprises glass.

14. The method of claim 6 , wherein the isolation structure is bonded to the substrate by anodic bonding techniques.

15. The method of claim 6 , further comprising performing a segment process to form a plurality of micro sample heating apparatuses subsequent to bonding the isolation structure to the substrate.