Method for manufacturing a through conductor

1. A method for manufacturing a through conductor comprising the steps of:

providing a silicon substrate having an upper surface and a lower surface;

providing an oxide film on the upper surface of the silicon substrate;

forming a mask having an opening on the oxide film;

etching the oxide film through the mask to form a through hole having a first size;

removing the mask;

etching the silicon substrate through the through hole in the oxide film to form a first hole having the first size through the silicon substrate;

enlarging the size of the through hole in the oxide film from the first size to a second size to provide a second hole by etching the oxide film isotropically and without a mask, the second hole having a width which is greater than that of the first hole; and

filling the first and second holes with a conductor.

2. The method according to claim 1 , wherein an anisotropic etching is used for the step of etching the silicon substrate to form the first hole.

3. The method according to claim 1 , wherein a plating method is used for the step of filling the first and second holes with the conductor.

4. A method for manufacturing a through conductor, comprising the steps of:

providing a silicon substrate having an upper surface and a lower surface;

forming a mask having an opening on the upper surface of the silicon substrate, the opening having a first size;

etching the silicon substrate with the mask which has the opening having the first size to form a first hole in the silicon substrate;

enlarging the size of the opening of the mask from the first size to a second size;

etching the silicon substrate with the mask which has the opening having the second size to form a second hole in the silicon substrate the second hole having a depth which is less than that of the first hole;

filling the first and second holes with a conductor; and

polishing the lower surface of the silicon substrate to expose the conductor filled in the first and second holes.

5. The method according to claim 4 , wherein an anisotropic etching is used for the steps of etching the silicon substrate to form the first and second holes.

6. The method according to claim 4 , wherein an isotropic etching is used for the step of enlarging the size of the opening of the mask.

7. The method according to claim 4 , wherein a plating method is used for the step of filling the first and second holes with the conductor.

8. A method for manufacturing a through conductor comprising the steps of:

providing a silicon substrate having an upper surface and a lower surface;

forming a mask having an opening on the upper surface of the silicon substrate;

etching the silicon substrate with the mask to form a hole in the silicon substrate;

forming a metal layer over an inner face of the hole;

removing the metal layer at a mouth of the hole;

filling the hole with a conductor after the step for removing the metal layer at the mouth of the hole; and

polishing the lower surface of the silicon substrate to expose the conductor filled in the hole.

9. The method according to claim 8 , wherein an anisotropic etching is used for the step of etching the silicon substrate to form the hole.

10. The method according to claim 8 , wherein a plating method is used for the step of filling the hole with the conductor.

11. A method for manufacturing a through conductor provided with a first conductor which extends in the direction of thickness of a silicon substrate from an upper surface of the silicon substrate, and a second conductor whose size in the direction orthogonal to the thickness direction is smaller than that of the first conductor penetrating from a bottom face of the first conductor to a lower surface of the silicon substrate, the method comprising the steps of:

forming an oxide film on the upper surface of the silicon substrate;

forming, over the oxide film, a resist mask having an opening of a size equal to a size of a second electrode forming hole for forming the second conductor at a portion where the through conductor is formed;

etching the oxide film by anisotropic etching with the resist mask as a mask to expose the upper surface of the silicon substrate to the opening;

removing the resist mask and etching the silicon substrate exposed by anisotropic etching with the exposed oxide film as a mask to form a deep hole;

removing the oxide film at a mouth of the deep hole by isotropic etching to expose the upper surface of the silicon substrate, having a size equal to a size of a first electrode forming hole for forming the first conductor;

etching the silicon substrate exposed by anisotropic etching with the retreated oxide film as a mask to form the first electrode forming hole and form the second electrode forming hole;

removing the oxide film and forming an insulating film over the exposed upper surface of silicon substrate and inner faces of the first and second electrode forming holes;

forming a base metal layer over the insulating film; and

plating a conductor onto the base metal layer to fill the first and second electrode forming holes with the conductor, thereby forming the first and second conductors.

12. The method according to claim 11 , wherein the step for retreating the oxide film at the mouth of the deep hole and the step for forming the first electrode forming hole with the retreated oxide film as a mask are repeated to form a stepwise electrode forming hole.

13. A method for manufacturing a through conductor provided with a first conductor which extends in the direction of thickness of a silicon substrate from an upper surface of the silicon substrate, and a second conductor whose size in the direction orthogonal to the thickness direction is smaller than that of the first conductor penetrating from a bottom face of the first conductor to a lower surface of the silicon substrate, the method comprising the steps of:

forming, over the upper surface of the silicon substrate, a resist mask having an opening of a size approximately equal to a size of a first electrode forming hole for forming the first conductor at a portion where the through conductor is formed;

etching the silicon substrate exposed by anisotropic etching with the resist mask as a mask to form a deep hole;

removing the resist mask and forming an insulating film over the exposed upper surface of silicon substrate and an inner face of the deep hole;

forming a first base metal layer over the insulating film;

removing the first base metal layer at a mouth of the deep hole by polishing to form the first electrode forming hole and form a second electrode forming hole for forming the second conductor;

forming a second base metal layer over the exposed insulating film and inner faces of the first and second electrode forming holes; and

plating a conductor onto the second base metal layer to fill the first and second electrode forming holes with the conductor, thereby forming the first and second conductors.

14. The method according to claim 13 , wherein the step for forming the first base metal layer and the step for removing the first base metal layer at the mouth of the deep hole to form the first electrode forming hole are repeated to form a stepwise electrode forming hole.