Method for measuring thickness of thin film, method for forming polycrystal semiconductor thin film, method for manufacturing semiconductor device, apparatus for manufacturing the same, and method for manufacturing image display device
A laser light is projected to a thin film deposited on a transparent substrate, and measurement is performed on the entire measurement area of the substrate, and transmission intensity is measured by a transmission light intensity monitor and reflection light intensity is measured by a reflection light intensity monitor at the same points and at the same number of points on the substrate. From the value of “A=1−(R+T)” where R represents reflectivity and T is transmissivity, film thickness is measured and evaluated from the relation of the value A with film thickness. By this procedure, film thickness can be determined on 10,000 substrates or more per minute and film thickness of thin film can be measured over the entire substrate surface.
1. A method for evaluation of a thin film formed on a transparent substrate, wherein said method comprising the steps of:
projecting a laser light from a single laser source of light with a single wavelength in an absorption band of the thin film on said thin film, and measuring reflection light intensity and transmission light intensity using a plurality of sensors forming at least one pair of sensors where the sensors of each pair are arranged on opposite sides of a surface of the thin film;
obtaining a light absorption amount of said thin film from a linear sum of the reflection light intensity and the transmission light intensity;
obtaining a thin film thickness and an in-plane distribution of the thin film thickness by using said light absorption amount;
laser annealing said thin film using an annealing laser having an annealing laser energy adjusted in accordance with said obtained thin film thickness;
obtaining an in-plane distribution of a grain size in said thin film after said laser annealing of the thin film;
determining an optimal range of said annealing laser energy by comparing said thin film thickness in-plane distribution with said in-plane distribution of grain size so that an increase of the grain size with said thin film thickness increase indicates an excess of said annealing laser energy, and decrease of the grain size with said thin film thickness increase indicates a shortage of said annealing laser energy; and
adjusting said annealing laser energy to said optimal range for processing a subsequent thin film formed on said transparent substrate.
2. A method for evaluation of a thin film according to claim 1 , said method further comprising the steps of:
determining a reflectivity and a transmissivity of said thin film from said reflection light intensity and said transmission light intensity as measured; and
calculating thickness of the thin film by using said reflectivity and said transmissivity, and by using an optical constant of a material constituting said thin film at the wavelength of the projected light.
3. A method for evaluation of a thin film according to claim 1 , wherein said transparent substrate is a glass substrate, and said thin film is an amorphous silicon thin film; and
said laser light from the single laser source of light having a wavelength such that the laser light from the single laser source of light is absorbed by said amorphous silicon thin film and substantially not absorbed by said glass substrate.
4. A method for evaluation of a thin film according to claim 1 , wherein said transparent substrate is a glass substrate, and said thin film is a multi-layer thin film; and
wherein said light absorption amount of said laser light from the single laser source of light with the single wavelength on a substance other than the multi-layer thin film to be measured is negligible.
5. A method for evaluation of a thin film according to claim 1 ,
wherein said thin film is an amorphous silicon thin film layer in a laminated film, said laminated thin film comprising a silicon nitride film formed on said glass substrate and a silicon oxide film formed on said silicon nitride film; and
wherein said laser light from the single laser source of light with said single wavelength in a range of 450 nm to 600 nm is projected.
6. A method for evaluation of a thin film according to claim 1 , wherein said laser light from the single laser source of light impacts the thin film at a substantially perpendicular direction to said transparent substrate.
7. A method for evaluation of a thin film formed on a transparent substrate, wherein said method comprising the steps of:
emitting a laser light from a single laser source of light with a single wavelength in an absorption band of the thin film;
splitting the laser light into a plurality of laser light beams and projecting each laser light beam on a separate measuring point on the thin film;
measuring reflection light intensity and transmission light intensity using a plurality of pairs of sensors, each pair having sensors arranged on the opposite sides of a surface of the thin film for a corresponding one of the plurality of laser light beams;
obtaining a light absorption amount for each measuring point of said thin film from a linear sum of the reflection light intensity and the transmission light intensity;
evaluating the thin film thickness for each measuring point by using said light absorption amount and generating an in-plane distribution of the thin film thickness;
laser annealing said thin film using an annealing laser having an annealing leaser energy adjusted in accordance with said obtained thin film thickness;
obtaining an in-plane distribution of a grain size in said thin film after said laser annealing of the thin film;
checking a dependency of the grain size on the thin film thickness and determining whether the annealing laser energy is in excess or in shortage from a sign of an inclination of said dependency of the grain size on the thin film thickness; and
adjusting said annealing laser energy for processing a subsequent thin film formed on said transparent substrate based on the determination.
8. A method for evaluation of a thin film according to claim 7 , wherein said method comprising the steps of:
determining at each measuring point, a reflectivity and a transmissivity of said thin film from said reflection light intensity and said transmission light intensity as measured; and
calculating a thickness of the thin film at each measuring point using said reflectivity and said transmissivity, and an optical constant of a material constituting said thin film at the wavelength of the projected light.
9. A method for evaluation of a thin film according to claim 7 , wherein said transparent substrate is a glass substrate, and said thin film is an amorphous silicon thin film; and
said laser light from the single laser source of light having a wavelength such that the laser light from the single laser source of light is absorbed by said amorphous silicon thin film and substantially not absorbed by said glass substrate.
10. A method for evaluation of a thin film according to claim 7 , wherein said transparent substrate is a glass substrate, and the thin film is a multi-layer thin film; and
wherein said light absorption amount of said laser light from the single laser source of light with such the single on a substance other than the multi-layer thin film to be measured is negligible.
11. A method for evaluation of a thin film according to claim 7 ,
wherein said thin film is an amorphous silicon thin film layer in a laminated film, said laminated thin film comprising a silicon nitride film formed on said glass substrate and a silicon oxide film formed on said silicon nitride film; and
wherein the laser light from the single laser source of light with said single wavelength in a range of 450 nm to 600 nm is projected.
12. A method for evaluation of a thin film according to claim 7 , wherein each of the plurality of laser beams is arranged to measure the thin film thicknesses at each measuring point in parallel.
13. A method for evaluation of a thin film according to claim 7 , wherein each of the plurality of laser light beams impact the measuring points on the thin film at a substantially perpendicular direction to said transparent substrate.