Method for test of electronic component

1. A method for testing an electronic component, comprising:

specifying search range limits, low-to-high transition edge and high-to-low transition edge found criterion, and number of comparison outcomes in a trial comprising multiple tests specified as proof of a low-to-high transition edge or as proof of a high-to-low transition edge;

computing initial values for trial parameters using the search range limits, wherein the trial parameters comprise: low-to-high band limits for a low-to-high trial and a low-to-high trial value, high-to-low band limits for a high-to-low trial and a high-to-low trial value, and number of high indicating comparison outcomes from an assumed previous trial;

specifying the low-to-high transition edge and the high-to-low transition edge as not found;

if low-to-high transition edge not found:

executing the low-to-high trial on the electronic component resulting in various low and high indicating comparison outcomes and

adjusting part of the trial parameter values based on results of executing the low-to-high trial;

if high-to-low transition edge not found:

executing the high-to-low trial on the electronic component resulting in various low and high indicating comparison outcomes and

adjusting another part of the trial parameter values based on results of executing the high-to-low trial;

if the results of the low-to-high trial meet the low-to-high transition edge found criterion:

specifying the low-to-high transition edge as found;

if the results of the high-to-low trial meet the high-to-low transition edge found criterion:

specifying the high-to-low transition edge as found;

if either low-to-high or high-to-low transition edge not found:

adjusting still another part of the trial parameter values based on results of the above executed trials and

repeating the above beginning with the condition if low-to-high transition edge not found; and

storing the final trial parameter values.

2. The method as recited in claim 1 , further comprising:

prior to executing the low-to-high trial, ensuring that the electronic component is in its low state; and

prior to executing the high-to-low trial, ensuring that the electronic component is in its high state.

3. The method as recited in claim 1 , wherein the low-to-high transition edge found criterion and the high-to-low transition edge found criterion depend upon a value specified for a resolution limit of the search.

4. The method as recited in claim 3 , further comprising:

if the absolute difference between upper and lower low-to-high band limits for the low-to-high trial is less than the resolution limit of the search, marking the low-to-high transition edge as found; and

if the absolute difference between upper and lower high-to-low band limits for the high-to-low trial is less than the resolution limit of the search, marking the high-to-low transition edge as found.

5. The method as recited in claim 1 , further comprising:

computing the low-to-high trial value based on the upper and lower low-to-high band limits; and

computing the high-to-low trial value based on the upper and lower high-to-low band limits.

6. The method as recited in claim 5 , wherein if either the upper low-to-high band limit does not equal the upper high-to-low band limit or if the lower low-to-high band limit does not equal the lower high-to-low band limit, the computed low-to-high trial value is equal to one-half the sum of the upper low-to-high band limit and the lower low-to-high band limit and the computed high-to-low trial value is equal to one-half the sum of the upper high-to-low band limit and the lower high-to-low band limit.

7. The method as recited in claim 5 , wherein if the upper low-to-high band limit equals the upper high-to-low band limit and if the lower low-to-high band limit equals the lower high-to-low band limit, the computed low-to-high trial value is equal to the sum of the lower low-to-high band limit and one-third the quantity of the lower low-to-high band limit subtracted from the upper low-to-high band limit and the computed high-to-low trial value is equal to the sum of the lower high-to-low band limit and two-thirds the quantity of the lower high-to-low band limit subtracted from the upper high-to-low band limit.

8. A computer readable memory device having stored thereon computer program instructions executable by the computer to perform a method for testing an electronic component, the instructions comprising:

specifying search range limits, low-to-high transition edge and high-to-low transition edge found criterion, and number of comparison outcomes in a trial comprising multiple tests specified as proof of a low-to-high transition edge or as proof of a high-to-low transition edge;

computing initial values for trial parameters using the search range limits, wherein the trial parameters comprise: low-to-high band limits for a low-to-high trial and a low-to-high trial value, high-to-low band limits for a high-to-low trial and a high-to-low trial value, and number of high indicating comparison outcomes from an assumed previous trial;

specifying the low-to-high transition edge and the high-to-low transition edge as not found;

if low-to-high transition edge not found:

executing the low-to-high trial on the electronic component resulting in various low and high indicating comparison outcomes and

adjusting part of the trial parameter values based on results of executing the low-to-high trial;

if high-to-low transition edge not found:

executing the high-to-low trial on the electronic component resulting in various low and high indicating comparison outcomes and

adjusting another part of the trial parameter values based on results of executing the high-to-low trial;

if the results of the low-to-high trial meet the low-to-high transition edge found criterion:

specifying the low-to-high transition edge as found;

if the results of the high-to-low trial meet the high-to-low transition edge found criterion:

specifying the high-to-low transition edge as found;

if either low-to-high or high-to-low transition edge not found:

adjusting still another part of the trial parameter values based on results of the above executed trials and

repeating the above beginning with the condition if low-to-high transition edge not found; and

storing the final trial parameter values.

9. The computer readable memory device as recited in claim 8 , the instructions further comprising:

prior to executing the low-to-high trial, ensuring that the electronic component is in its low state; and

prior to executing the high-to-low trial, ensuring that the electronic component is in its high state.

10. The computer readable memory device as recited in claim 8 , wherein the low-to-high transition edge found criterion and the high-to-low transition edge found criterion depend upon a value specified for a resolution limit of the search.

11. The computer readable memory device as recited in claim 10 , the instructions further comprising:

if the absolute difference between upper and lower low-to-high band limits for the low-to-high trial is less than the resolution limit of the search, marking the low-to-high transition edge as found; and

if the absolute difference between upper and lower high-to-low band limits for the high-to-low trial is less than the resolution limit of the search, marking the high-to-low transition edge as found.

12. The computer readable memory device as recited in claim 8 , the instructions further comprising:

computing the low-to-high trial value based on the upper and lower low-to-high band limits; and

computing the high-to-low trial value based on the upper and lower high-to-low band limits.

13. The computer readable memory device as recited in claim 12 , wherein if either the upper low-to-high band limit does not equal the upper high-to-low band limit or if the lower low-to-high band limit does not equal the lower high-to-low band limit, the computed low-to-high trial value is equal to one-half the sum of the upper low-to-high band limit and the lower low-to-high band limit and the computed high-to-low trial value is equal to one-half the value of the upper high-to-low band limit subtracted from the lower high-to-low band limit.

14. The computer readable memory device as recited in claim 12 , wherein if the upper low-to-high band limit equals the upper high-to-low band limit and if the lower low-to-high band limit equals the lower high-to-low band limit, the computed low-to-high trial value is equal to the sum of the lower low-to-high band limit and one-third the quantity of the lower low-to-high band limit subtracted from the upper low-to-high band limit and the computed high-to-low trial value is equal to the sum of the lower high-to-low band limit and two-thirds the quantity of the lower high-to-low band limit subtracted from the upper high-to-low band limit.

15. A method for testing an electronic component, comprising:

specifying search range limits and low-to-high transition edge and high-to-low transition edge found criterion;

computing initial values for trial parameters using the search range limits, wherein the trial parameters comprise: low-to-high band limits for a low-to-high trial and a low-to-high trial value and high-to-low band limits for a high-to-low trial and a high-to-low trial value;

specifying the low-to-high transition edge and the high-to-low transition edge as not found;

if low-to-high transition edge not found:

ensuring that the electronic component is in its low state,

executing the low-to-high trial on the electronic component resulting in various low and high indicating comparison outcomes, and

adjusting part of the trial parameter values based on results of executing the low-to-high trial;

if high-to-low transition edge not found:

ensuring that the electronic component is in its high state,

executing the high-to-low trial on the electronic component resulting in various low and high indicating comparison outcomes, and

adjusting another part of the trial parameter values based on results of executing the high-to-low trial;

if the results of the low-to-high trial meet the low-to-high transition edge found criterion:

specifying the low-to-high transition edge as found;

if the results of the high-to-low trial meet the high-to-low transition edge found criterion:

specifying the high-to-low transition edge as found;

if either low-to-high or high-to-low transition edge not found:

adjusting still another part of the trial parameter values based on results of the above executed trials and

repeating the above beginning with the condition if low-to-high transition edge not found; and

storing the final trial parameter values.

16. The method as recited in claim 15 , wherein the low-to-high transition edge found criterion and the high-to-low transition edge found criterion depend upon a value specified for a resolution limit of the search.

17. The method as recited in claim 16 , further comprising:

if the absolute difference between upper and lower low-to-high band limits for the low-to-high trial is less than the resolution limit of the search, marking the low-to-high transition edge as found; and

if the absolute difference between upper and lower high-to-low band limits for the high-to-low trial is less than the resolution limit of the search, marking the high-to-low transition edge as found.

18. The method as recited in claim 15 , further comprising:

computing the low-to-high trial value based on the upper and lower low-to-high band limits; and

computing the high-to-low trial value based on the upper and lower high-to-low band limits.

19. A computer readable memory device having stored thereon computer program instructions executable by the computer to perform a method for testing an electronic component, the instructions comprising:

specifying search range limits and low-to-high transition edge and high-to-low transition edge found criterion;

computing initial values for trial parameters using the search range limits, wherein the trial parameters comprise: low-to-high band limits for a low-to-high trial and a low-to-high trial value and high-to-low band limits for a high-to-low trial and a high-to-low trial value;

specifying the low-to-high transition edge and the high-to-low transition edge as not found;

if low-to-high transition edge not found:

ensuring that the electronic component is in its low state,

executing the low-to-high trial on the electronic component resulting in various low and high indicating comparison outcomes, and

adjusting part of the trial parameter values based on results of executing the low-to-high trial;

if high-to-low transition edge not found:

ensuring that the electronic component is in its high state,

executing the high-to-low trial on the electronic component resulting in various low and high indicating comparison outcomes, and

adjusting another part of the trial parameter values based on results of executing the high-to-low trial;

if the results of the low-to-high trial meet the low-to-high transition edge found criterion:

specifying the low-to-high transition edge as found;

if the results of the high-to-low trial meet the high-to-low transition edge found criterion:

specifying the high-to-low transition edge as found;

if either low-to-high or high-to-low transition edge not found:

adjusting still another part of the trial parameter values based on results of the above executed trials and

repeating the above beginning with the condition if low-to-high transition edge not found; and

storing the final trial parameter values.

20. The computer readable memory device as recited in claim 19 , wherein the low-to-high transition edge found criterion and the high-to-low transition edge found criterion depend upon a value specified for a resolution limit of the search.

21. The computer readable memory device as recited in claim 20 , the instructions further comprising:

if the absolute difference between upper and lower low-to-high band limits for the low-to-high trial is less than the resolution limit of the search, marking the low-to-high transition edge as found; and

if the absolute difference between upper and lower high-to-low band limits for the high-to-low trial is less than the resolution limit of the search, marking the high-to-low transition edge as found.

22. The computer readable memory device as recited in claim 19 , the instructions further comprising:

computing the low-to-high trial value based on the upper and lower low-to-high band limits; and

computing the high-to-low trial value based on the upper and lower high-to-low band limits.