IP Library Granted Patent US 7,718,088
Granted Patent B2
US 7,718,088 · App. 11/420,766 · Granted May 18, 2010

Light emitting diode and wavelength converting material

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Quick Facts
Patent No.
US 7,718,088
App. No.
11/420,766
Granted
May 18, 2010
Kind
B2
Abstract

A wavelength converting material including a wavelength converting activator and a scatter is provided. The wavelength converting activator is suitable for being activated by a light with a wavelength λ 1 , so as to emit a light with a wavelength λ 2 . The scatter is disposed on the wavelength converting activator. The scatter is suitable for scattering a first light and a second light irradiated to a surface thereof. As a result of that the scatters on the wavelength converting activators increases the gap of two wavelength converting activators adjacent to each other, the wavelength converting activators could be sufficiently activated for emitting a light with wavelength λ 2 while the wavelength converting materials are irradiated by the light with λ 1 . Therefore, the brightness of a light emitting diode with the wavelength converting material is enhanced.

Claims (86)

1. A wavelength converting material, comprising:

a wavelength converting activator suitable for being activated by a light with a wavelength λ 1 so as to emit a light with a wavelength λ 2 ;

a scatter disposed on the wavelength converting activator, the scatter being suitable for scattering the light irradiated to a surface thereof; and

a bonding compound located between the wavelength converting activator and the scatter, wherein the bonding compound is suitable for being activated by the light with the wavelength λ 1 so as to emit a light with a wavelength λ 4 .

2. The wavelength converting material as claimed in claim 1 , wherein the material of the wavelength converting activator is selected from fluorescent material, phosphorous material, dyes, and any combination thereof.

3. The wavelength converting material as claimed in claim 2 , wherein the composition of the wavelength converting activator is represented by: (A) 2x (B) 2y (C) 2z (D) 3x+sy+tz :(E), wherein 0≦x≦15, 0≦y≦9, 0≦z≦4; s is the valence number of Component B; t is the valence number of Component C; and A is selected from Y, Ce, Tb, Gd, Sc, Sm, Eu, Al, Ga, Tl, In, B, Lu, and any combination thereof; B is selected from Mg, Ca, Sr, Ba, Zn, Cu, Ni, Li, Na, K, Ag, and any combination thereof; C is selected from Mo, W, P, V, Si, Ti, Zr, Nb, Ta, and any combination thereof; D is selected from O, S, Se, and any combination thereof; and E is selected from Ce, Eu, Tb, Mn, and any combination thereof.

4. The wavelength converting material as claimed in claim 1 , wherein the material of the scatter is selected from Al 2 O 3 , ZnO, SiO 2 , TiO 2 , or the material with the composition of (A) 2x′ (B) 2y′ (C) 2z′ (D) 3x′+s′y′+t′z′ :(E), wherein 0≦x′≦15, 0≦y′≦9, 0≦z′≦4; s′ is the valence number of Component B; t′ is the valence number of Component C; and A is selected from Y, Ce, Tb, Gd, Sc, Sm, Eu, Al, Ga, Tl, In, B, Lu, and any combination thereof; B is selected from Mg, Ca, Sr, Ba, Zn, Cu, Ni, Li, Na, K, Ag, and any combination thereof; C is selected from Mo, W, P, V, Si, Ti, Zr, Nb, Ta, and any combination thereof; D is selected from O, S, Se, and any combination thereof; and E

is selected from Ce, Eu, Tb, Mn, and any combination thereof.

5. The wavelength converting material as claimed in claim 1 , wherein the scatter is suitable for being activated by the light with the wavelength λ 1 so as to emit a light with a wavelength λ 3 .

6. The wavelength converting material as claimed in claim 1 , wherein the scatter is suitable for being activated by the light with the wavelength λ 2 so as to emit a light with a wavelength λ 3 .

7. The wavelength converting material as claimed in claim 1 , further comprising a transparent material, wherein the wavelength converting activator and the scatter are distributed in the transparent material.

8. A wavelength converting material, comprising:

a wavelength converting activator suitable for being activated by a light with a wavelength λ 1 so as to emit a light with a wavelength λ 2 ; and

a scatter disposed on the wavelength converting activator, the scatter being suitable for scattering the light irradiated to a surface thereof, wherein the wavelength converting activator comprises:

a core suitable for being activated by a light with a wavelength λ 1 so as to emit a light with a wavelength λ 2 ; and

a first transparent coating cladding the core, wherein the first transparent coating is SiO 2 .

9. The wavelength converting material as claimed in claim 8 , wherein the material of the core is selected from fluorescent material, phosphorous material, dyes, and any combination thereof.

10. The wavelength converting material as claimed in claim 8 , wherein the composition of the core is represented by: (A) 2x (B) 2y (C) 2z (D) 3x+sy+tz :(E), wherein 0≦x≦15, 0≦y≦9, 0≦z≦4; s is the valence number of Component B; t is the valence number of Component C; and A is selected from Y, Ce, Tb, Gd, Sc, Sm, Eu, Al, Ga, Tl, In, B, Lu, and any combination thereof; B is selected from Mg, Ca, Sr, Ba, Zn, Cu, Ni, Li, Na, K, Ag, and any combination thereof; C is selected from Mo, W, P, V, Si, Ti, Zr, Nb, Ta, and any combination thereof; D is selected from O, S, Se, and any combination thereof and E is selected from Ce, Eu, Tb, Mn, and any combination thereof.

11. The wavelength converting material as claimed in claim 8 , wherein the material of the scatter is selected from Al 2 O 3 , ZnO, SiO 2 , TiO 2 , or the material with the composition of (A) 2x′ (B) 2y′ (C) 2z′ (D) 3x′+s′y′+t′z′ :(E), wherein 0≦x′≦15, 0≦y′≦9, 0≦z′≦4; s′ is the valence number of Component B; t′ is the valence number of Component C; and A is selected from Y, Ce, Tb, Gd, Sc, Sm, Eu, Al, Ga, Tl, In, B, Lu, and any combination thereof; B is selected from Mg, Ca, Sr, Ba, Zn, Cu, Ni, Li, Na, K, Ag, and any combination thereof; C is selected from Mo, W, P, V, Si, Ti, Zr, Nb, Ta, and any combination thereof; D is selected from O, S, Se, and any combination thereof; and E is selected from Ce, Eu, Tb, Mn, and any combination thereof.

12. The wavelength converting material as claimed in claim 8 , wherein the scatter is suitable for being activated by the light with the wavelength λ 2 so as to emit a light with a wavelength λ 3 .

13. The wavelength converting material as claimed in claim 8 , wherein the scatter is suitable for being activated by the light with the wavelength λ 2 so as to emit a light with a wavelength λ 3 .

14. The wavelength converting material as claimed in claim 8 , further comprising a transparent material, wherein the wavelength converting activator and the scatter are distributed in the transparent material.

15. A wavelength converting material, comprising:

a wavelength converting activator suitable for being activated by a light with a wavelength λ 1 so as to emit a light with a wavelength λ 2 ;

a scatter disposed on the wavelength converting activator, the scatter being suitable for scattering the light irradiated to a surface thereof; and

a second transparent coating cladding the wavelength converting activator and the scatter, wherein the second transparent coating is SiO 2 .

16. The wavelength converting material as claimed in claim 15 , wherein the material of the wavelength converting activator is selected from fluorescent material, phosphorous material, dyes, and any combination thereof.

17. The wavelength converting material as claimed in claim 16 , wherein the composition of the wavelength converting activator is represented by: (A) 2x (B) 2y (C) 2z (D) 3x +sy+tz :(E), wherein 0≦x≦15, 0≦y≦9, 0≦z≦4; s is the valence number of Component B; t is the valence number of Component C; and A is selected from Y, Ce, Tb, Gd, Sc, Sm, Eu, Al, Ga, Tl, In, B, Lu, and any combination thereof; B is selected from Mg, Ca, Sr, Ba, Zn, Cu, Ni, Li, Na, K, Ag, and any combination thereof; C is selected from Mo, W, P, V, Si, Ti, Zr, Nb, Ta, and any combination thereof; D is selected from O, S, Se, and any combination thereof; and E is selected from Ce, Eu, Tb, Mn, and any combination thereof.

18. The wavelength converting material as claimed in claim 15 , wherein the material of the scatter is selected from Al 2 O 3 , ZnO, SiO 2 , TiO 2 , or the material with the composition of (A) 2x′ (B) 2y′ (C) 2z′ (D) 3x′+s′y′+t′z′ :(E), wherein 0≦x′≦15, 0≦y′≦9, 0≦z′≦4; s′ is the valence number of Component B; t′ is the valence number of Component C; and A is selected from Y, Ce, Tb, Gd, Sc, Sm, Eu, Al, Ga, Tl, In, B, Lu, and any combination thereof; B is selected from Mg, Ca, Sr, Ba, Zn, Cu, Ni, Li, Na, K, Ag, and any combination thereof; C is selected from Mo, W, P, V, Si, Ti, Zr, Nb, Ta, and any combination thereof; D is selected from O, S, Se, and any combination thereof; and E is selected from Ce, Eu, Tb, Mn, and any combination thereof.

19. The wavelength converting material as claimed in claim 15 , wherein the scatter is suitable for being activated by the light with the wavelength λ 1 so as to emit a light with a wavelength λ 3 .

20. The wavelength converting material as claimed in claim 15 , wherein the scatter is suitable for being activated by the light with the wavelength λ 2 so as to emit a light with a wavelength λ 3 .

21. The wavelength converting material as claimed in claim 15 , further comprising a transparent material, wherein the wavelength converting activator and the scatter are distributed in the transparent material.

22. A light emitting diode (LED), comprising:

a carrier;

an LED chip disposed on the carrier and being electrically connected to the carrier, the LED chip being suitable for emitting a light with a wavelength λ 1 ; and

a wavelength converting material disposed around the LED chip, wherein the wavelength converting material comprises:

a wavelength converting activator suitable for being activated by the light with the wavelength λ 1 so as to emit a light with a wavelength λ 2 ;

a scatter, disposed on the wavelength converting activator and suitable for scattering the light irradiated to a surface thereof; and

a bonding compound located between the wavelength converting activator and the scatter.

23. The LED as claimed in claim 22 , wherein the material of the wavelength converting activator is selected from fluorescent material, phosphorous material, dyes, and any combination thereof.

24. The LED as claimed in claim 23 , wherein the composition of the wavelength converting activator is represented by: (A) 2x (B) 2y (C) 2z (D) 3x+sy+tz :(E), wherein 0≦x≦15, 0≦y≦9, 0≦z≦4; s is the valence number of Component B; t is the valence number of Component C; and A is selected from Y, Ce, Tb, Gd, Sc, Sm, Eu, Al, Ga, Tl, In, B, Lu, and any combination thereof; B is selected from Mg, Ca, Sr, Ba, Zn, Cu, Ni, Li, Na, K, Ag, and any combination thereof; C is selected from Mo, W, P, V, Si, Ti, Zr, Nb, Ta, and any combination thereof; D is selected from O, S, Se, and any combination thereof; and E is selected from Ce, Eu, Tb, Mn, and any combination thereof.

25. The LED as claimed in claim 22 , wherein the material of the scatter is selected from Al 2 O 3 , ZnO, SiO 2 , TiO 2 , or the material with the composition of (A) 2x′ (B) 2y′ (C) 2z′ (D) 3x′+s′y′+t′z′ :(E), wherein 0≦x′≦15, 0≦y′≦9, 0≦z′≦4; s′ is the valence number of Component B; t′ is the valence number of Component C; and A is selected from Y, Ce, Tb, Gd, Sc, Sm, Eu, Al, Ga, Tl, In, B, Lu, and any combination thereof; B is selected from Mg, Ca, Sr, Ba, Zn, Cu, Ni, Li, Na, K, Ag, and any

combination thereof; C is selected from Mo, W, P, V, Si, Ti, Zr, Nb, Ta, and any combination thereof; D is selected from O, S, Se, and any combination thereof; and E is selected from Ce, Eu, Tb, Mn, and any combination thereof.

26. The LED as claimed in claim 22 , wherein the scatter is suitable for being activated by the light with the wavelength λ 1 so as to emit a light with a wavelength λ 3 .

27. The LED as claimed in claim 22 , wherein the scatter is suitable for being activated by the light with the wavelength λ 2 so as to emit a light with a wavelength λ 3 .

28. The LED as claimed in claim 22 , wherein the bonding compound is suitable for being activated by the light with the wavelength λ 1 so as to emit a light with a wavelength λ 4 .

29. The LED as claimed in claim 22 , wherein the wavelength converting material further comprises a transparent material, and the wavelength converting activator and the scatter are distributed in the transparent material.

30. The LED as claimed in claim 29 , wherein the wavelength converting activator comprises:

a core suitable for being activated by a light with a wavelength λ 1 so as to emit a light with a wavelength λ 2 ; and

a first transparent coating cladding the core, wherein the light refractive index of the transparent material is approximate to that of the first transparent coating, so as to avoid a total reflection and Fresnel loss at the junction of the first transparent coating and the transparent material when the light is irradiated into the transparent material from the first transparent coating.

31. A light emitting diode (LED), comprising:

a carrier;

an LED chip disposed on the carrier and being electrically connected to the carrier, the LED chip being suitable for emitting a light with a wavelength λ 1 ; and

a wavelength converting material disposed around the LED chip, wherein the wavelength converting material comprises:

a wavelength converting activator suitable for being activated by the light with the wavelength λ 1 so as to emit a light with a wavelength λ 2 ;

a scatter, disposed on the wavelength converting activator and suitable for scattering the light irradiated to a surface thereof; and

a bonding compound located between the wavelength converting activator and the scatter, wherein the wavelength converting activator comprises:

a core suitable for being activated by a light with a wavelength λ 1 so as to emit a light with a wavelength λ 2 ; and

a first transparent coating cladding the core.

32. The LED as claimed in claim 31 , wherein the material of the core is selected from fluorescent material, phosphorous material, dyes, and any combination thereof.

33. The LED as claimed in claim 31 , wherein the composition of the core is represented by: (A) 2x (B) 2y (C) 2z (D) 3x+sy+tz :(E), wherein 0≦x≦15, 0≦y≦9, 0≦z≦4; s is the valence number of Component B; t is the valence number of Component C; and A is selected from Y, Ce, Tb, Gd, Sc, Sm, Eu, Al, Ga, Tl, In, B, Lu, and any combination thereof; B is selected from Mg, Ca, Sr, Ba, Zn, Cu, Ni, Li, Na, K, Ag, and any combination thereof; C is selected from Mo, W, P, V, Si, Ti, Zr, Nb, Ta, and any combination thereof; D is selected from O, S, Se, and any combination thereof; and E is selected from Ce, Eu, Tb, Mn, and any combination thereof.

34. The LED as claimed in claim 31 , wherein the first transparent coating is SiO 2 .

35. The LED as claimed in claim 31 , wherein the material of the scatter is selected from Al 2 O 3 , ZnO, SiO 2 , TiO 2 , or the material with the composition of (A) 2x′ (B) 2y′ (C) 2z′ (D) 3x′+s′y′+t′z′ :(E), wherein 0≦x′≦15, 0≦y′≦9, 0≦z′≦4; s′ is the valence number of Component B; t′ is the valence number of Component C; and A is selected from Y, Ce, Tb, Gd, Sc, Sm, Eu, Al, Ga, Tl, In, B, Lu, and any combination thereof; B is selected from Mg, Ca, Sr, Ba, Zn, Cu, Ni, Li, Na, K, Ag, and any combination thereof; C is selected from Mo, W, P, V, Si, Ti, Zr, Nb, Ta, and any combination thereof; D is selected from O, S, Se, and any combination thereof; and E is selected from Ce, Eu, Tb, Mn, and any combination thereof.

36. The LED as claimed in claim 31 , wherein the scatter is suitable for being activated by the light with the wavelength λ 1 so as to emit a light with a wavelength λ 3 .

37. The LED as claimed in claim 31 , wherein the scatter is suitable for being activated by the light with the wavelength λ 2 so as to emit a light with a wavelength λ 3 .

38. The LED as claimed in claim 31 , wherein the bonding compound is suitable for being activated by the light with the wavelength λ 1 so as to emit a light with a wavelength λ 4 .

39. The LED as claimed in claim 31 , wherein the wavelength converting material further comprises a transparent material, and the wavelength converting activator and the scatter are distributed in the transparent material.

40. A light emitting diode (LED), comprising:

a carrier;

an LED chip disposed on the carrier and being electrically connected to the carrier, the LED chip being suitable for emitting a light with a wavelength λ 1 ; and

a wavelength converting material disposed around the LED chip, wherein the wavelength converting material comprises:

a wavelength converting activator suitable for being activated by the light with the wavelength λ 1 so as to emit a light with a wavelength λ 2 ;

a scatter, disposed on the wavelength converting activator and suitable for scattering the light irradiated to a surface thereof;

a bonding compound located between the wavelength converting activator and the scatter; and

a second transparent coating cladding the wavelength converting activator and the scatter.

41. The LED as claimed in claim 40 , wherein the second transparent coating is SiO 2 .

42. The LED as claimed in claim 40 , wherein the material of the wavelength converting activator is selected from fluorescent material, phosphorous material, dyes, and any combination thereof.

43. The LED as claimed in claim 42 , wherein the composition of the wavelength converting activator is represented by: (A) 2x (B) 2y (C) 2z (D) 3x+sy+tz :(E) , wherein 0≦x≦15, 0≦y≦9, 0≦z≦4; s is the valence number of Component B; t is the valence number of Component C; and A is selected from Y, Ce, Tb, Gd, Sc, Sm, Eu, Al, Ga, Tl, In, B, Lu, and any combination thereof; B is selected from Mg, Ca, Sr, Ba, Zn, Cu, Ni, Li, Na, K, Ag, and any combination thereof; C is selected from Mo, W, P, V, Si, Ti, Zr, Nb, Ta, and any combination thereof; D is selected from O, S, Se, and any combination thereof; and E is selected from Ce, Eu, Tb, Mn, and any combination thereof.

44. The LED as claimed in claim 40 , wherein the material of the scatter is selected from Al 2 O 3 , ZnO, SiO 2 , TiO 2 , or the material with the composition of (A) 2x′ (B) 2y′ (C) 2z′ (D) 3x′+s′y′+t′z′ :(E), wherein 0≦x′≦15, 0≦y′≦9, 0≦z′≦4; s′ is the valence number of Component B; t′ is the valence number of Component C; and A is selected from Y, Ce, Tb, Gd, Sc, Sm, Eu, Al, Ga, Tl, In, B, Lu, and any combination thereof; B is selected from Mg, Ca, Sr, Ba, Zn, Cu, Ni, Li, Na, K, Ag, and any combination thereof; C is selected from Mo, W, P, V, Si, Ti, Zr, Nb, Ta, and any combination thereof; D is selected from O, S, Se, and any combination thereof; and E is selected from Ce, Eu, Tb, Mn, and any combination thereof.

45. The LED as claimed in claim 40 , wherein the scatter is suitable for being activated by the light with the wavelength λ 2 so as to emit a light with a wavelength λ 3 .

46. The LED as claimed in claim 40 , wherein the scatter is suitable for being activated by the light with the wavelength λ 2 so as to emit a light with a wavelength λ 3 .

47. The LED as claimed in claim 40 , wherein the bonding compound is suitable for being activated by the light with the wavelength λ 1 so as to emit a light with a wavelength λ 4 .

48. The LED as claimed in claim 40 , wherein the wavelength converting material further comprises a transparent material, and the wavelength converting activator and the scatter are distributed in the transparent material.

49. The LED as claimed in claim 48 , wherein the wavelength converting activator comprises:

a core suitable for being activated by a light with a wavelength λ 1 so as to emit a light with a wavelength λ 2 ; and

a first transparent coating cladding the core, wherein the light refractive index of the transparent material is approximate to that of the first transparent coating, so as to avoid a total reflection and Fresnel loss at the junction of the first transparent coating and the transparent material when the light is irradiated into the transparent material from the first transparent coating.

Assignments (3)
MERGER Recorded Mar 27, 2026
From: LEXTAR ELECTRONICS CORPORATION
To: ENNOSTAR CORPORATION
Reel/Frame 075286/0822 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 30, 2010
From: LIGHTHOUSE TECHNOLOGY CO., LTD
To: LEXTAR ELECTRONICS CORP.
Reel/Frame 024314/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 15, 2006
From: HWANG, WEN-JENG; CHANG, CHIH-CHIN; HSIEH, HSIANG-CHENG; HO, HSIN-HUA
To: LIGHTHOUSE TECHNOLOGY CO., LTD
Reel/Frame 017785/0853 →