Method for Making a Microelectromechanical Systems (MEMS) Device Including a Superlattice
A method for making a microelectromechanical system (MEMS) device may include providing a substrate, and forming at least one movable member supported by the substrate. The at least one movable member may include a superlattice including a plurality of stacked groups of layers with each group of layers of the superlattice comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions.
1 . A method for making a microelectromechanical system (MEMS) device comprising:
providing a substrate; and
forming at least one movable member supported by the substrate and comprising a superlattice including a plurality of stacked groups of layers with each group of layers of the superlattice comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions.
2 . The method of claim 1 wherein the superlattice comprises a piezoelectric superlattice.
3 . The method of claim 1 further comprising providing a driver carried by the substrate for driving the at least one movable member.
4 . The method of claim 1 further comprising forming a first electrically conductive contact carried by the at least one movable member, and forming a second electrically conductive contact carried by the substrate and aligned with the first electrically conductive contact.
5 . The method of claim 1 further comprising forming a first radio frequency (RF) signal line connected to the first electrically conductive contact, and forming a second RF signal line connected to the second electrically conductive contact.
6 . The method of claim 1 further comprising forming a pair of bias voltage contacts for applying a bias voltage to the superlattice for moving the at least one movable member.
7 . The method of claim 1 wherein portions of the superlattice are spaced apart from the substrate.
8 . The method of claim 1 further comprising forming a dielectric anchor carried by the substrate, and wherein the at least one movable member is supported by the dielectric anchor.
9 . The method of claim 1 wherein the base semiconductor comprises silicon.
10 . The method of claim 1 wherein the at least one non-semiconductor monolayer comprises oxygen.
11 . The method of claim 1 wherein the at least one non-semiconductor monolayer comprises a non-semiconductor selected from the group consisting essentially of oxygen, nitrogen, fluorine, and carbon-oxygen.
12 . The method of claim 1 wherein the at least one non-semiconductor monolayer is a single monolayer thick.
13 . The method of claim 1 wherein all of the base semiconductor portions are a same number of monolayers thick.
14 . The method of claim 1 wherein at least some of the base semiconductor portions are a different number of monolayers thick.
15 . The method of claim 1 wherein opposing base semiconductor portions in adjacent groups of layers of the at least one superlattice are chemically bound together.
16 . A method for making a microelectromechanical system (MEMS) device comprising:
providing a substrate;
forming at least one movable member supported by the substrate;
forming a first electrically conductive contact carried by the at least one movable member;
forming a second electrically conductive contact carried by the substrate and aligned with the first electrically conductive contact; and
providing a driver carried by the substrate for driving the at least one movable member;
the at least one movable member comprising a superlattice including a plurality of stacked groups of layers with each group of layers of the superlattice comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions.
17 . The method of claim 16 wherein the superlattice comprises a piezoelectric superlattice.
18 . The method of claim 16 further comprising forming a first radio frequency (RF) signal line connected to the first electrically conductive contact, and forming a second RF signal line connected to the second electrically conductive contact.
19 . The method of claim 16 further comprising forming a pair of bias voltage contacts carried by the superlattice and coupled to the driver.
20 . The method of claim 16 wherein portions of the superlattice are spaced apart from the substrate.
21 . The method of claim 16 further comprising forming a dielectric anchor carried by the substrate, and wherein the at least one movable member is supported by the dielectric anchor.
22 . The method of claim 16 wherein the base semiconductor comprises silicon; and wherein the at least one non-semiconductor monolayer comprises oxygen.
23 . The method of claim 16 wherein opposing base semiconductor portions in adjacent groups of layers of the at least one superlattice are chemically bound together.