IP Library Assignment 019817/0236
Patent Assignment
Reel/Frame 019817/0236

Change of Name

Recorded: 2007-09-12 Pages: 27
Assignor
RJ MEARS, LLC
Executed: 2007-03-14
Assignee
MEARS TECHNOLOGIES, INC.
1100 WINTER STREET, SUITE 4700, WALTHAM, MASSACHUSETTS, 02451
Covered Properties (52)
Integrated Circuit Comprising an Active Optical Device Having an Energy Band Engineered Superlattice
Patent: 7,432,524 →
Application: 10/936,903 →
Publication: US 2005/0029511
Electronic Device Comprising Active Optical Devices with an Energy Band Engineered Superlattice
Patent: 7,446,334 →
Application: 10/936,913 →
Publication: US 2005/0029509
Method for making an integrated circuit comprising an active optical device having an energy band engineered superlattice
Application: 10/936,933 →
Publication: US 2005/0032247
Integrated Circuit Comprising a Waveguide Having an Energy Band Engineered Superlattice
Patent: 7,279,699 →
Application: 10/937,071 →
Publication: US 2005/0031247
Method for making electronic device comprising active optical devices with an energy band engineered superlattice
Application: 10/937,072 →
Publication: US 2005/0029510
Semiconductor Device Comprising a Superlattice Channel Vertically Stepped Above Source and Drain Regions
Patent: 7,436,026 →
Application: 10/940,426 →
Publication: US 2005/0087737
Method for Making Semiconductor Device Comprising a Superlattice with Upper Portions Extending Above Adjacent Upper Portions of Source and Drain Regions
Patent: 7,288,457 →
Application: 10/940,594 →
Publication: US 2005/0118767
Semiconductor Device Comprising a Superlattice with Upper Portions Extending Above Adjacent Upper Portions of Source and Drain Regions
Patent: 7,279,701 →
Application: 10/941,062 →
Publication: US 2005/0110003
Semiconductor Device Including a Mosfet Having a Band-Engineered Superlattice with a Semiconductor Cap Layer Providing a Channel
Patent: 7,435,988 →
Application: 11/042,270 →
Publication: US 2005/0173697
Method for Making a Semiconductor Device Including a Mosfet Having a Band-Engineered Superlattice with a Semiconductor Cap Layer Providing a Channel
Patent: 7,265,002 →
Application: 11/042,272 →
Publication: US 2005/0173696
Semiconductor Device Including Mosfet Having Band-Engineered Superlattice
Patent: 7,303,948 →
Application: 11/089,950 →
Publication: US 2005/0184286
Method for Making a Semiconductor Device Comprising a Superlattice Dielectric Interface Layer
Patent: 7,446,002 →
Application: 11/136,747 →
Publication: US 2006/0019454
Method for making a semiconductor device including a superlattice having at least one group of substantially undoped layers
Application: 11/136,748 →
Publication: US 2005/0282330
Semiconductor device including a superlattice having at least one group of substantially undoped layers
Application: 11/136,757 →
Publication: US 2005/0279991
Semiconductor device comprising a superlattice dielectric interface layer
Application: 11/136,881 →
Publication: US 2006/0011905
Semiconductor Device Including a Dopant Blocking Superlattice
Application: 11/380,987 →
Publication: US 2006/0220118
Method for Making a Semiconductor Device Including a Dopant Blocking Superlattice
Application: 11/380,992 →
Publication: US 2006/0273299
Semiconductor Device Including a Floating Gate Memory Cell with a Superlattice Channel
Patent: 7,659,539 →
Application: 11/381,787 →
Publication: US 2006/0243963
Method for Making a Semiconductor Device Including a Floating Gate Memory Cell with a Superlattice Channel
Application: 11/381,794 →
Publication: US 2006/0263980
Semiconductor Device Having a Semiconductor-on-Insulator Configuration and a Superlattice
Patent: 7,586,116 →
Application: 11/381,835 →
Publication: US 2006/0261327
Method for Making a Semiconductor Device Having a Semiconductor-on-Insulator Configuration and a Superlattice
Application: 11/381,850 →
Publication: US 2006/0243964
Semiconductor Device Including a Memory Cell with a Negative Differential Resistance (Ndr) Device
Patent: 7,531,850 →
Application: 11/420,876 →
Publication: US 2006/0202189
Method for Making a Semiconductor Device Including a Memory Cell with a Negative Differential Resistance (Ndr) Device
Application: 11/420,891 →
Publication: US 2006/0231857
Microelectromechanical Systems (Mems) Device Including a Superlattice
Patent: 7,586,165 →
Application: 11/421,234 →
Publication: US 2006/0226502
Method for Making a Microelectromechanical Systems (MEMS) Device Including a Superlattice
Application: 11/421,263 →
Publication: US 2006/0223215
Semiconductor Device Including Shallow Trench Isolation (STI) Regions with a Superlattice Therebetween
Application: 11/425,201 →
Publication: US 2006/0267130
Method for Making a Semiconductor Device Including Shallow Trench Isolation (Sti) Regions with a Superlattice Therebetween
Patent: 7,514,328 →
Application: 11/425,209 →
Publication: US 2006/0270169
Method for Making a FINFET Including a Superlattice
Application: 11/426,976 →
Publication: US 2006/0292765
Method for Making a Semiconductor Device Having a Semiconductor-on-Insulator (Soi) Configuration and Including a Superlattice on a Thin Semiconductor Layer
Patent: 7,491,587 →
Application: 11/428,003 →
Publication: US 2006/0292818
Semiconductor Device Having a Semiconductor-on-Insulator (SOI) Configuration and Including a Superlattice on a Thin Semiconductor Layer
Application: 11/428,015 →
Publication: US 2006/0289049
Semiconductor Device Including a Strained Superlattice Layer Above a Stress Layer
Patent: 7,612,366 →
Application: 11/457,256 →
Publication: US 2007/0007508
Method for Making a Semiconductor Device Including a Strained Superlattice Layer Above a Stress Layer
Application: 11/457,263 →
Publication: US 2007/0010040
Semiconductor Device Including a Strained Superlattice Between at Least One Pair of Spaced Apart Stress Regions
Patent: 7,531,828 →
Application: 11/457,269 →
Publication: US 2007/0012909
Method for Making a Semiconductor Device Including a Strained Superlattice Between at Least One Pair of Spaced Apart Stress Regions
Application: 11/457,276 →
Publication: US 2007/0015344
Semiconductor Device Including a Strained Superlattice and Overlying Stress Layer and Related Methods
Patent: 7,598,515 →
Application: 11/457,286 →
Publication: US 2007/0012912
Method for Making Semiconductor Device Including a Strained Superlattice and Overlying Stress Layer and Related Methods
Application: 11/457,293 →
Publication: US 2007/0020860
Semiconductor Device Including a Channel with a Non-Semiconductor Layer Monolayer
Application: 11/457,299 →
Publication: US 2007/0012910
Method for Making a Semiconductor Device Including a Channel with a Non-Semiconductor Layer Monolayer
Application: 11/457,315 →
Publication: US 2007/0020833
Semiconductor Device Including Regions of Band-Engineered Semiconductor Superlattice to Reduce Device-on Resistance
Patent: 7,531,829 →
Application: 11/534,298 →
Publication: US 2007/0012911
Method for Making a Semiconductor Device Including Regions of Band-Engineered Semiconductor Superlattice to Reduce Device-on Resistance
Patent: 7,535,041 →
Application: 11/534,343 →
Publication: US 2007/0012999
Semiconductor device including a front side strained superlattice layer and a back side stress layer
Application: 11/534,796 →
Publication: US 2007/0063185
Method for making a semiconductor device including a front side strained superlattice layer and a back side stress layer
Application: 11/534,819 →
Publication: US 2007/0063186
Electronic Device Including a Poled Superlattice Having a Net Electrical Dipole Moment
Application: 11/614,477 →
Publication: US 2007/0158640
Method for Making an Electronic Device Including a Poled Superlattice Having a Net Electrical Dipole Moment
Patent: 7,517,702 →
Application: 11/614,513 →
Publication: US 2007/0161138
Electronic Device Including a Selectively Polable Superlattice
Application: 11/614,535 →
Publication: US 2007/0187667
Method for Making an Electronic Device Including a Selectively Polable Superlattice
Application: 11/614,559 →
Publication: US 2007/0166928
Multiple-Wavelength Opto-Electronic Device Including a Superlattice
Patent: 7,880,161 →
Application: 11/675,833 →
Publication: US 2008/0197340
Method for Making a Multiple-Wavelength Opto-Electronic Device Including a Superlattice
Patent: 7,863,066 →
Application: 11/675,846 →
Publication: US 2008/0197341
Semiconductor Device Comprising a Lattice Matching Layer
Patent: 7,718,996 →
Application: 11/677,098 →
Publication: US 2007/0194298
Method for Making a Semiconductor Device Comprising a Lattice Matching Layer
Patent: 7,700,447 →
Application: 11/677,099 →
Publication: US 2007/0197006
Spintronic Devices with Constrained Spintronic Dopant
Application: 11/687,422 →
Publication: US 2008/0012004
Methods of Making Spintronic Devices with Constrained Spintronic Dopant
Patent: 7,625,767 →
Application: 11/687,430 →
Publication: US 2007/0238274
Related Assignments (25)
Other recorded transfers of the patents in this record — the chain of ownership.
Assignment of Assignor's Interest Sep 9, 2004
From: MEARS, ROBERT J.; STEPHENSON, ROBERT JOHN
To: RJ MEARS, LLC
Reel/Frame 015784/0090 →
Assignment of Assignor's Interest Sep 9, 2004
From: MEARS, ROBERT J.; STEPHENSON, ROBERT JOHN
To: RJ MEARS, LLC
Reel/Frame 015785/0225 →
Assignment of Assignor's Interest Sep 9, 2004
From: MEARS, ROBERT J.; STEPHENSON, ROBERT JOHN
To: RJ MEARS, LLC
Reel/Frame 015785/0189 →
Assignment of Assignor's Interest Sep 9, 2004
From: MEARS, ROBERT J.; STEPHENSON, ROBERT JOHN
To: RJ MEARS, LLC
Reel/Frame 015783/0871 →
Assignment of Assignor's Interest Sep 9, 2004
From: MEARS, ROBERT J.; STEPHENSON, ROBERT JOHN
To: RJ MEARS, LLC
Reel/Frame 015783/0429 →
Assignment of Assignor's Interest Jan 3, 2005
From: KREPS, SCOTT A.
To: RJ MEARS, LLC
Reel/Frame 016117/0806 →
Assignment of Assignor's Interest Feb 4, 2005
From: KREPS, SCOTT A.
To: RJ MEARS, LLC
Reel/Frame 016239/0096 →
Assignment of Assignor's Interest Feb 7, 2005
From: KREPS, SCOTT A.
To: RJ MEARS, LLC
Reel/Frame 016291/0509 →
Assignment of Assignor's Interest Feb 7, 2005
From: KEEPS, SCOTT A.
To: RJ MEARS, LLC
Reel/Frame 016242/0387 →
Assignment of Assignor's Interest Apr 20, 2005
From: MEARS, ROBERT J.; YIPTONG, JEAN AIGUSTIN CHAN FOOK; HYTHA, MAREK; KREPS, SCOTT A.
To: RJ MEARS, LLC
Reel/Frame 016477/0963 →
Assignment of Assignor's Interest Apr 20, 2005
From: MEARS, ROBERT J.; YIPTONG, JEAN AIGUSTIN CHAN SOW FOOK; HYTHA, MAREK; KREPS, SCOTT A.
To: RJ MEARS, LLC
Reel/Frame 016478/0469 →
Assignment of Assignor's Interest Sep 1, 2005
From: MEARS, ROBERT J.; KREPS, SCOTT A.
To: RJ MEARS, LLC
Reel/Frame 016989/0718 →
Assignment of Assignor's Interest Sep 1, 2005
From: MEARS, ROBERT J.; KREPS, SCOTT A.
To: RJ MEARS, LLC
Reel/Frame 016947/0703 →
Assignment of Assignor's Interest Oct 4, 2005
From: MEARS, ROBERT J.; HYTHA, MAREK; KREPS, SCOTT A.; STEPHENSON, ROBERT JOHN
To: RJ MEARS, LLC
Reel/Frame 017059/0266 →
Assignment of Assignor's Interest Oct 4, 2005
From: MEARS, ROBERT J.; HYTHA, MAREK; KREPS, SCOTT A.; STEPHENSON, ROBERT JOHN
To: RJ MEARS, LLC
Reel/Frame 017059/0249 →
Re-Record to Correct the Name of the Second Assignor, Previously Recorded on Reel 016477 Frame 0963. Mar 20, 2006
From: MEARS, ROBERT J.; YIPTONG, JEAN AUGUSTIN CHAN SOW FOOK; HYTHA, MAREK; KREPS, SCOTT A.
To: RJ MEARS, LLC
Reel/Frame 017709/0372 →
Assignment of Assignor's Interest Jun 26, 2006
From: STEPHENSON, ROBERT JOHN; HYTHA, MAREK
To: RJ MEARS, LLC
Reel/Frame 017844/0284 →
Assignment of Assignor's Interest Jun 27, 2006
From: KREPS, SCOTT A.; RAO, KALIPATNAM VIVEK
To: RJ MEARS, LLC
Reel/Frame 017850/0761 →
Assignment of Assignor's Interest Jul 7, 2006
From: KREPS, SCOTT A.; RAO, KALIPATNAM VIVEK
To: RJ MEARS, LLC
Reel/Frame 017891/0529 →
Assignment of Assignor's Interest Jul 28, 2006
From: KREPS, SCOTT A.; RAO, KALIPATNAM VIVEK
To: RJ MEARS, LLC
Reel/Frame 018017/0991 →
Assignment of Assignor's Interest Aug 4, 2006
From: STEPHENSON, ROBERT JOHN; HYTHA, MAREK
To: RJ MEARS, LLC
Reel/Frame 018054/0190 →
Security Interest Mar 17, 2015
From: MEARS TECHNOLOGIES, INC.
To: LIQUID VENTURE PARTNERS, LLC
Reel/Frame 035216/0473 →
Change of Name Apr 11, 2016
From: MEARS TECHNOLOGIES, INC.
To: ATOMERA INCORPORATED
Reel/Frame 038400/0349 →
Change of Name Oct 4, 2016
From: MEARS TECHNOLOGIES, INC.
To: ATOMERA INCORPORATED
Reel/Frame 040223/0108 →
Release of Security Interest Sep 3, 2020
From: CLIFFORD, ROBERT
To: ATOMERA INCORPORATED
Reel/Frame 053681/0942 →