Semiconductor Device Including a Channel with a Non-Semiconductor Layer Monolayer
A semiconductor device may include a semiconductor substrate, and at least one metal oxide semiconductor field-effect transistor (MOSFET) thereon. The MOSFET may include spaced-apart source and drain regions, a channel between the source and drain regions, and a gate overlying the channel defining an interface therewith. The gate may include a gate dielectric overlying the channel and a gate electrode overlying the gate dielectric. The channel may include a plurality of stacked base semiconductor monolayers, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor monolayers. The at least one non-semiconductor monolayer may be positioned at depth of about 4-100 monolayers relative to the interface between the channel and the gate dielectric.
1 . A semiconductor device comprising:
a semiconductor substrate; and
at least one metal oxide semiconductor field-effect transistor (MOSFET) thereon comprising
spaced-apart source and drain regions,
a channel between the source and drain regions, said channel comprising a plurality of stacked base semiconductor monolayers and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor monolayers, and
a gate overlying said channel and defining an interface therewith, said gate comprising a gate dielectric overlying said channel and a gate electrode overlying said gate dielectric;
said at least one non-semiconductor monolayer being positioned at depth of about 4-100 monolayers relative to the interface between said channel and said gate dielectric.
2 . The semiconductor device of Claim 1 wherein said at least one non-semiconductor monolayer is positioned at a depth of about 4 to 30 monolayers relative to the interface between said channel and said gate dielectric.
3 . The semiconductor device of claim 1 wherein each base semiconductor monolayer comprises silicon.
4 . The semiconductor device of claim 1 wherein each base semiconductor monolayer comprises a base semiconductor selected from the group consisting of Group IV semiconductors, Group III-V semiconductors, and Group II-VI semiconductors.
5 . The semiconductor device of claim 1 wherein said at least one non-semiconductor monolayer comprises oxygen.
6 . The semiconductor device of claim 1 wherein said at least one non-semiconductor monolayer comprises a non-semiconductor selected from the group consisting of oxygen, nitrogen, fluorine, and carbon-oxygen.
7 . The semiconductor device of claim 1 wherein adjacent base semiconductor monolayers on opposing sides of said at least one non-semiconductor layer are chemically bound together.
8 . The semiconductor device of claim 1 wherein said at least one non-semiconductor monolayer comprises a single non-semiconductor monolayer.
9 . A semiconductor device comprising:
a semiconductor substrate; and
at least one metal oxide semiconductor field-effect transistor (MOSFET) thereon comprising
spaced-apart source and drain regions,
a channel between the source and drain regions, said channel comprising a plurality of stacked base silicon monolayers and at least one oxygen monolayer constrained within a crystal lattice of adjacent base silicon monolayers, and
a gate overlying said channel and defining an interface therewith, said gate comprising a gate dielectric overlying said channel and a gate electrode overlying said gate dielectric;
said at least one oxygen monolayer being positioned at depth of about 4-100 monolayers relative to the interface between said channel and said gate dielectric.
10 . The semiconductor device of claim 9 wherein said at least one oxygen monolayer is positioned at a depth of about 4 to 30 monolayers relative to the interface between said channel and said gate dielectric.
11 . The semiconductor device of claim 9 wherein adjacent base silicon monolayers on opposing sides of said at least one non-semiconductor layer are chemically bound together.
12 . The semiconductor device of claim 9 wherein said at least one oxygen monolayer comprises a single oxygen monolayer.