Method of forming a surface acoustic wave (SAW) filter device
A SAW filter includes a piezoelectric substrate of Lithium Niobate or optionally Lithium Tantalate having a thickness of at least twice an acoustic wavelength. The piezoelectric substrate is bonded to a surrogate substrate of a silicon material. The surrogate substrate is characterized by a resisitivity of at least 100 ohm-cm and an expansion coefficient compatible with the piezoelectric substrate. A catalytic bonding film between the piezoelectric substrate and the surrogate substrate is formed from a first catalytic bonding film deposited onto a surface of the piezoelectric substrate and a second catalytic bonding film deposited onto a surface of the surrogate substrate. The piezoelectric substrate is bonded to the surrogate substrate through a compression force sufficient for providing a bonding at a normal temperature.
1. A method of forming a surface acoustic wave (SAW) filter device, the method comprising:
providing a piezoelectric substrate having a thickness at least twice an acoustic wavelength of a SAW;
polishing a surface of the piezoelectric substrate;
depositing a silicon oxide film onto the surface of the piezoelectric substrate;
polishing an exposed film surface of the silicon oxide film deposited on the piezoelectric substrate;
providing a surrogate substrate characterized by an expansion coefficient less than that of the piezoelectric substrate, and a thermal conductivity for facilitating thermal diffusion;
polishing one surface of the surrogate substrate;
depositing a silicon oxide film onto the one surface of the surrogate substrate;
polishing an exposed surface of the silicon oxide film deposited on the surrogate substrate;
while at a normal temperature, compressing the exposed film surfaces of the silicon oxide films against each other while providing a force sufficient for bonding the piezoelectric substrate to the surrogate substrate; and
forming transducers on an exposed surface of the piezoelectric substrate.
2. A method according to claim 1 , wherein the piezoelectric substrate comprises one of lithium tantalite and lithium niobate.
3. A method according to claim 1 , wherein the surrogate substrate comprises a silicon material having a thickness within a range of 100 to 500 microns.
4. A method according to claim 1 , wherein the normal temperature comprises a temperature within a range of 15 degrees centigrade to 125 degrees centigrade.
5. A method according to claim 1 , wherein the transducer forming comprises depositing metal electrodes.