Pattern formation method
View Patent ↗In a pattern formation method, a resist film is formed on a substrate, an alkali-soluble first barrier film is formed on the resist film and an alkali-insoluble second barrier film is formed on the first barrier film. Subsequently, with a liquid provided on the second barrier film, pattern exposure is performed by selectively irradiating the resist film with exposing light through the second barrier film and the first barrier film. Then, after removing the second barrier film, the resist film having been subjected to the pattern exposure is developed, so as to remove the first barrier film and form a resist pattern made of the resist film.
1. A pattern formation method comprising the steps of:
forming a resist film on a substrate;
forming an alkali-soluble first barrier film on said resist film using a first barrier film material;
forming an alkali-insoluble second barrier film on said first barrier film using a second barrier film material;
performing pattern exposure by selectively irradiating said resist film with exposing light through said second barrier film and said first barrier film with a liquid provided on said second barrier film;
removing said second barrier film; and
removing said first barrier film and forming a resist pattern made of said resist film by developing said resist film after the pattern exposure,
wherein said second barrier film material contains a different base polymer from said first barrier film material.
2. The pattern formation method of claim 1 , further comprising, between the step of forming an alkali-soluble first barrier film and the step of forming an alkali-insoluble second barrier film, a step of subjecting said first barrier film to a thermal treatment.
3. The pattern formation method of claim 1 , further comprising, between the step of forming an alkali-insoluble second barrier film and the step of performing pattern exposure, a step of subjecting said first barrier film and said second barrier film to a thermal treatment.
4. The pattern formation method of claim 1 ,
wherein said exposing light is KrF excimer laser, Xe 2 laser, ArF excimer laser, F 2 laser, KrAr laser or Ar 2 laser.
5. A pattern formation method comprising the steps of:
forming a resist film on a substrate;
forming an alkali-soluble first barrier film on said resist film;
forming an alkali-insoluble second barrier film on said first barrier film;
performing pattern exposure by selectively irradiating said resist film with exposing light through said second barrier film and said first barrier film with a liquid provided on said second barrier film;
removing said second barrier film; and
removing said first barrier film and forming a resist pattern made of said resist film by developing said resist film after the pattern exposure
wherein said first barrier film includes an alcohol solvent.
6. The pattern formation method of claim 5 ,
wherein said alcohol solvent is ethanol, isopropyl alcohol, n-propyl alcohol, t-butyl alcohol, sec-butyl alcohol or n-butyl alcohol.
7. The pattern formation method of claim 1 ,
wherein said second barrier film is soluble in a fluorine solvent.
8. The pattern formation method of claim 7 ,
wherein said fluorine solvent is 1,1,2,3,3,3-hexafluoro-1-diethylaminopropane or triethylamine tris-hydrofluoride.
9. The pattern formation method of claim 1 ,
wherein said liquid is water or an acidic solution.
10. The pattern formation method of claim 9 ,
wherein said acidic solution is a cesium sulfate aqueous solution or a phosphoric acid aqueous solution.
11. A pattern formation method comprising the steps of:
forming a resist film on a substrate;
forming an alkali-soluble first barrier film on said resist film using first barrier film material;
forming an alkali-insoluble second barrier film on said first barrier film using a second barrier film material;
performing pattern exposure by selectively irradiating said resist film with exposing light through said second barrier film and said first barrier film with a liquid provided on said second barrier film;
removing said second barrier film;
removing said first barrier film; and
forming a resist pattern made of said resist film by developing said resist film after the pattern exposure and after removing said first barrier film,
wherein said second barrier film material contains a different base polymer from said first barrier film material.
12. The pattern formation method of claim 11 , further comprising, between the step of forming an alkali-soluble first barrier film and the step of forming an alkali-insoluble second barrier film, a step of subjecting said first barrier film to a thermal treatment.
13. The pattern formation method of claim 11 , further comprising, between the step of fanning an alkali-insoluble second barrier film and the step of performing pattern exposure, a step of subjecting said first barrier film and said second barrier film to a thermal treatment.
14. The pattern formation method of claim 11 ,
wherein said second barrier film is soluble in a fluorine solvent.
15. The pattern formation method of claim 14 ,
wherein said fluorine solvent is 1,1,2,3,3,3-hexafluoro-1-diethylaminopropane or triethylamine tris-hydrofluoride.
16. The pattern formation method of claim 11 ,
wherein said liquid is water or an acidic solution.
17. The pattern formation method of claim 16 ,
wherein said acidic solution is a cesium sulfate aqueous solution or a phosphoric acid aqueous solution.
18. The pattern formation method of claim 11 ,
wherein said exposing light is KrF excimer laser, Xe 2 laser, ArF excimer laser, F 2 laser, KrAr laser or Ar 2 laser.
19. A pattern formation method comprising the steps of:
forming a resist film on a substrate;
forming an alkali-soluble first barrier film on said resist film;
forming an alkali-insoluble second barrier film on said first barrier film;
performing pattern exposure by selectively irradiating said resist film with exposing light through said second barrier film and said first barrier film with a liquid provided on said second barrier film;
removing said second barrier film;
removing said first barrier film; and
forming a resist pattern made of said resist film by developing said resist film after the pattern exposure and after removing said first barrier film,
wherein said first barrier film includes an alcohol solvent.
20. The pattern formation method of claim 19 ,
wherein said alcohol solvent is ethanol, isopropyl alcohol, n-propyl alcohol, t-butyl alcohol, sec-butyl alcohol or n-butyl alcohol.
21. A pattern formation method comprising the steps of:
forming a resist film on a substrate;
forming an alkali-soluble first barrier film on said resist film using a first barrier film;
forming an alkali-insoluble second barrier film on said first barrier film using a second barrier film;
performing pattern exposure by selectively irradiating said resist film with exposing light through said second barrier film and said first barrier film with a liquid provided on said second barrier film;
removing said first barrier film, thereby simultaneously removing said second barrier film; and
forming a resist pattern made of said resist film by developing said resist film after the pattern exposure,
wherein said second barrier film material contains a different base polymer from said first barrier film material.
22. The pattern formation method of claim 21 , further comprising, between the step of forming an alkali-soluble first barrier film and the step of forming an alkali-insoluble second barrier film, a step of subjecting said first barrier film to a thermal treatment.
23. The pattern formation method of claim 21 , further comprising, between the step of forming an alkali-insoluble second barrier film and the step of performing pattern exposure, a step of subjecting said first barrier film and said second barrier film to a thermal treatment.
24. The pattern formation method of claim 21 ,
wherein said first barrier film includes an alcohol solvent.
25. The pattern formation method of claim 24 ,
wherein said alcohol solvent is ethanol, isopropyl alcohol, n-propyl alcohol, t-butyl alcohol, sec-butyl alcohol or n-butyl alcohol.
26. The pattern formation method of claim 21 ,
wherein said second barrier film is soluble in a fluorine solvent.
27. The pattern formation method of claim 26 ,
wherein said fluorine solvent is 1,1,2,3,3,3-hexafluoro-1-diethylaminopropane or triethylamine tris-hydrofluoride.
28. The pattern formation method of claim 21 ,
wherein said liquid is water or an acidic solution.
29. The pattern formation method of claim 28 ,
wherein said acidic solution is a cesium sulfate aqueous solution or a phosphoric acid aqueous solution.
30. The pattern formation method of claim 21 ,
wherein said exposing light is KrF excimer laser, Xe 2 laser, ArF excimer laser, F 2 laser, KrAr laser or Ar 2 laser.