Calibration method for electron-beam system and electron-beam system
View Patent ↗There is provided an electron-beam calibration technology whereby deflection calibration used in the electron-beam system can be performed with a high accuracy. A one-dimensional diffraction grating is located such that direction of the grating becomes parallel to an electron-beam scanning direction. Next, the electron-beam scanning is horizontally performed while displacing the electron-beam scanning in the perpendicular direction so that the electron-beam scanning displacement quantity will coincide with pitch size of the grating. From a secondary-electron signal image acquired, based on the presence or absence of moiré interference fringes, it can be judged whether or not the deflection calibration in the direction perpendicular to the electron-beam scanning has been correctly performed.
1. An electron-beam calibration method for an electron-beam system including at least an electron source for emitting an electron beam, a stage for mounting a sample thereon, deflection means, an objective lens, and a calibrating mark, said electron-beam calibration method comprising the steps of:
scanning said electron beam on said calibrating mark in a first direction parallel to a one-dimensional diffraction grating pattern arranged with a predetermined pitch size;
displacing by said deflection means, said scanning position in a second direction perpendicular to said first direction, and by an amount corresponding to said pitch size of said diffraction grating,
scanning said electron beam in said first direction parallel to said one-dimensional diffraction grating pattern;
detecting reflected electrons or secondary electrons emitted from said calibrating mark; and
performing, from said detection result, calibration for a deflection direction or a deflection quantity of said electron beam.
2. An electron-beam calibration method for an electron-beam system including at least an electron source for emitting an electron beam, a stage for mounting a sample thereon, deflection means, an objective lens, and a calibrating mark, said electron-beam calibration method comprising the steps of:
scanning said electron beam on said calibrating mark in a first direction parallel to a one-dimensional diffraction grating pattern arranged with a predetermined pitch size;
displacing said electron beam in a second direction perpendicular to said one-dimensional diffraction grating pattern,
scanning said electron beam once again in first said direction parallel to said one-dimensional diffraction grating pattern;
detecting reflected electrons or secondary electrons over an interval time, said reflected electrons or secondary electrons being emitted from said calibrating mark, said interval time corresponding to a time cycle for which said displacing coincides with a pitch size of said one dimensional diffraction grating pattern; and
performing, from said detection result, calibration for a deflection direction or a deflection quantity of said electron beam.
3. The electron-beam calibration method according to claim 1 , further comprising the steps of:
making a comparison between a reflected-electron image or a secondary-electron image acquired from said detection result and a reference image memorized in advance; and
performing, from said comparison result, said calibration for said deflection direction or said deflection quantity of said electron beam.
4. The electron-beam calibration method according to claim 3 , wherein said detection result or said comparison result is a moiré pattern.
5. The electron-beam calibration method according to claim 1 , wherein said pitch size of said one-dimensional diffraction grating pattern is a diffraction grating pattern pitch size determined based on an optical diffraction.
6. The electron-beam calibration method according to claim 1 , wherein said one-dimensional diffraction grating pattern is of a superlattice multi-layer cross-section structure.
7. An electron-beam system, comprising:
an electron source for emitting an electron beam;
a deflector;
an objective lens;
a stage for mounting a sample thereon;
a calibrating mark for calibrating an irradiation position with said electron beam; and
an electron detector for detecting reflected electrons or secondary electrons generated by said irradiation with said electron beam, wherein
said calibrating mark includes a one-dimensional diffraction grating pattern arranged with a predetermined pitch size,
said electron-beam system further comprising:
a control unit for
scanning said electron beam in a first direction parallel to said one-dimensional diffraction grating pattern, and
displacing said scanning position in a second direction and scanning said electron beam again in said first direction, said second direction being perpendicular to said one-dimensional diffraction grating pattern; and
a display unit for displaying a reflected-electron image or a secondary-electron image acquired by said scanning.
8. The electron-beam system according to claim 7 , wherein
said control unit displaces said scanning position in said second direction and in correspondence with said pitch spacing of said diffraction grating.
9. The electron-beam system according to claim 7 , wherein
said control unit comprises:
a signal analysis unit for making a comparison between said reflected-electron image or said secondary-electron image and a reference image memorized in advance, said reflected-electron image or said secondary-electron image being acquired by scanning said electron beam in said first direction parallel to said one-dimensional diffraction grating pattern; and
a deflection control unit for correcting a deflection quantity of said electron beam based on said comparison result.
10. The electron-beam system according to claim 9 , wherein said comparison result is displayed on said display unit.
11. The electron-beam system according to claim 7 , wherein
said control unit comprises:
a signal processing unit for controlling said electron detector to detect said reflected electrons or secondary electrons with a period corresponding to said pitch spacing of said one-dimensional diffraction grating pattern, said reflected electrons or secondary electrons being emitted from said calibrating mark by said scanning of said electron beam;
a signal calculation unit for calculating a scanning-position shift quantity from said reflected-electron image or said secondary-electron image detected and said one-dimensional diffraction grating pattern; and
a deflection control unit for correcting a deflection quantity of said electron beam based on said calculation result.
12. The electron-beam system according to claim 7 , wherein said pitch size of said one-dimensional diffraction grating pattern is a diffraction grating pattern pitch size determined based on an optical diffraction.
13. The electron-beam system according to claim 7 , wherein said one-dimensional diffraction grating pattern is of a superlattice multi-layer cross-section structure.
14. The electron-beam system according to claim 7 , wherein said calibrating mark is located on said stage.