SIP type package containing analog semiconductor chip and digital semiconductor chip stacked in order, and method for manufacturing the same

1 . A semiconductor package comprising:

a wiring board having a ground layer formed therein;

an analog semiconductor chip provided on or above said ground layer; and

a digital semiconductor chip provided on or above said analog semiconductor chip such that a substrate of said digital semiconductor chip is directed toward said analog semiconductor chip.

2 . The semiconductor package as set forth in claim 1 , wherein said analog semiconductor chip is formed as a radio frequency signal processing semiconductor chip, and said digital semiconductor chip is formed as a baseband signal processing semiconductor chip.

3 . The semiconductor package as set forth in claim 1 , wherein said ground layer is coextended with respect to said analog semiconductor chip.

4 . The semiconductor package as set forth in claim 1 , wherein an active layer of said analog semiconductor chip is directed toward an upside, and an active layer of said digital semiconductor chip is directed toward the upside.

5 . The semiconductor package as set forth in claim 4 , wherein said analog semiconductor chip and said digital semiconductor chip are connected to a wiring pattern layer, formed on said wiring board, with a plurality of conductive wires.

6 . The semiconductor package as set forth in claim 1 , wherein an active layer of said analog semiconductor chip is directed toward a downside, and an active layer of said digital semiconductor chip is directed toward an upside.

7 . The semiconductor package as set forth in claim 6 , wherein said digital semiconductor chip is mounted on a substrate of said analog semiconductor chip.

8 . The semiconductor package as set forth in claim 6 , wherein said analog semiconductor chip has a plurality of metal bumps provided on the active layer thereof, and is connected to a wiring pattern layer, formed on said wiring board, with said metal bumps, and wherein said digital semiconductor chip is connected to said wiring pattern layer with a plurality of conductive wires.

9 . The semiconductor package as set forth in claim 1 , wherein said digital semiconductor chip features a wider size than that of the analog semiconductor chip.

10 . The semiconductor package as set forth in claim 9 , further comprising a spacer unit provided between said analog semiconductor chip and said digital semiconductor chip.

11 . The semiconductor package as set forth in claim 1 , further comprising:

an impedance matching circuit provided on said wiring board for said analog semiconductor chip; and

a molded resin enveloper encapsulating said analog and digital semiconductor chips and said impedance matching circuit.

12 . The semiconductor package as set forth in claim 1 , further comprising:

a band pass filter provided on said wiring board for said analog semiconductor chip; and

a molded resin enveloper encapsulating said analog and digital semiconductor chips and said band pass filter.

13 . The semiconductor package as set forth in claim 1 , further comprising a plurality of metal balls securely attached as electrode terminals to respective electrode pads formed on a bottom surface of the wiring board.

14 . The semiconductor package as set forth in claim 1 , wherein said wiring board is formed as a multi-layered wiring board including at least a lowermost insulating layer, an intermediate insulating layer, and an uppermost insulating layer.

15 . The semiconductor package as set forth in claim 14 , wherein an active layer of said analog semiconductor chip is directed toward an upside, and an active layer of said digital semiconductor chip is directed toward the upside, said ground layer being formed in said uppermost insulating layer so that said analog semiconductor chip is positioned on said ground layer.

16 . The semiconductor package as set forth in claim 14 , wherein an active layer of said analog semiconductor chip is directed toward a downside, and an active layer of said digital semiconductor chip is directed toward an upside, said ground layer being formed in said intermediate insulating layer just below said uppermost insulating layer so that said analog semiconductor chip is positioned above said ground layer.

17 . A method for manufacturing a semiconductor package comprising:

preparing a wiring board;

forming a ground layer in said wiring board;

providing an analog semiconductor chip on or above said ground layer; and

providing a digital semiconductor chip on or above said analog semiconductor chip such that a substrate of said digital semiconductor chip is directed toward said analog semiconductor chip.

18 . The method as set forth in claim 17 , wherein said analog semiconductor chip is formed as a radio frequency signal processing semiconductor chip, and said digital semiconductor chip is formed as a baseband signal processing semiconductor chip.

19 . The method as set forth in claim 17 , wherein the formation of said ground layer is carried out so that said ground layer is coextended with respect to said analog semiconductor chip.