Semiconductor chip with coil element over passivation layer
View Patent ↗A method for fabricating a circuitry component includes providing a semiconductor substrate, a first coil over said semiconductor substrate, a passivation layer over said first coil; and depositing a second coil over said passivation layer and over said first coil. Said second coil may be deposited by forming a first metal layer over said passivation layer, forming a pattern defining layer over said first metal layer, a first opening in said pattern defining layer exposing said first metal layer, forming a second metal layer over said first metal layer exposed by said first opening, removing said pattern defining layer, and removing said first metal layer not under said second metal layer.
1. A method for fabricating a circuit component comprising:
providing a semiconductor substrate, a first coil over said semiconductor substrate, and a passivation layer over said first coil, wherein said flassivation layer comprises a nitride layer having a thickness between 0.2 and 1.2 micrometers;
coating a first polymer layer on said passivation layer;
after said coating said first polymer layer, exposing said first polymer layer using 1X stepper;
after said exposing said first polymer layer, curing said first polymer layer; and
after said curing said first polymer layer, forming a second coil over said first polymer layer, over said passivation layer and directly over said first coil, wherein said forming said second coil comprises sputtering a titanium-containing layer over said first polymer layer, followed by sputtering a first gold layer on said titanium-containing layer, followed by forming a photoresist layer on said first gold layer, wherein an opening in said photoresist layer is over said first gold layer and exposes said first gold layer, followed by electroplating a second gold layer having a thickness between 1 and 30 micrometers on said first gold layer exposed by said opening using an electrolyte comprising a sulphurous acid, a sodium ion and a gold ion, followed by removing said photoresist layer, followed by etching said first gold layer not under said second gold layer, followed by etching said titanium-containing layer not under said second gold layer.
2. The method of claim 1 , wherein said electroplating said second gold layer comprises using said electrolyte having a gold ion concentration between 5 and 20 grams per liter.
3. The method of claim 1 , wherein said electroplating said second gold layer comprises using said electrolyte having a PH value between 6.5 and 9.
4. The method of claim 1 , wherein said electroplating said second gold layer comprises using said electrolyte in a temperature between 30 and 65 centigrade degrees.
5. The method of claim 1 , wherein said etching said titanium-containing layer comprising using an etchant comprising hydrogen peroxide.
6. The method of claim 1 , wherein said titanium-containing layer comprises titanium tungsten.
7. The method of claim 1 , wherein said passivation layer comprises an oxide layer under said nitride layer.
8. The method of claim 1 , wherein said first polymer layer comprises polyimide.
9. The method of claim 1 , wherein said first coil comprises aluminum.
10. The method of claim 1 , wherein said first coil comprises electroplated copper.
11. The method of claim 1 , wherein said exposing said first polymer layer further comprises using a light with a wavelength between 434 and 437 nanometers.
12. The method of claim 1 , wherein said exposing said first polymer layer further comprises using a light with a wavelength between 403 and 406 nanometers.
13. The method of claim 1 , wherein said exposing said first polymer layer further comprises using a light with a wavelength between 364 and 366 nanometers.
14. The method of claim 1 further comprising forming a second polymer layer on said second coil.
15. A method for fabricating a circuit component comprising:
providing a semiconductor substrate, a first coil over said semiconductor substrate, and a passivation layer over said first coil, wherein said passivation layer comprises a nitride layer having a thickness between 0.2 and 1.2 micrometers;
coating a first polymer layer on said passivation layer;
after said coating said first polymer layer, exposing said first polymer layer using 1× stepper;
after said exposing said first polymer layer, curing said first polymer layer; and
after said curing said first polymer layer, forming a second coil over said first polymer layer, over said passivation layer and directly over said first coil, wherein said forming said second coil comprises sputtering an adhesion/barrier layer over said first polymer layer, followed by sputtering a first copper layer on said adhesion/barrier layer, followed by forming a photoresist layer on said first copper layer, wherein an opening in said photoresist layer is over said first copper layer and exposes said first copper layer, followed by electroplating a second copper layer having a thickness between 1 and 30 micrometers on said first copper layer exposed by said opening, followed by removing said photoresist layer, followed by etching said first copper layer not under said second copper layer, followed by removing said adhesion/barrier layer not under said second copper layer.
16. The method of claim 15 , wherein said forming said second coil further comprises forming a nickel layer on said second copper layer, followed by said removing said photoresist layer.
17. The method of claim 16 , wherein said forming said second coil further comprises forming a gold layer on said nickel layer, followed by said removing said photoresist layer.
18. The method of claim 15 , wherein said first coil comprises aluminum.
19. The method of claim 15 , wherein said first coil comprises electroplated copper.
20. The method of claim 15 further comprising forming a second polymer layer on said second coil.