Laser diode generating passive mode and method of creating optical pulse using the same diode
View Patent ↗Provided are a laser diode generating passive mode locking that does not contain non-linear sector of an SA, and a method of creating an optical pulse using the same diode. The laser diode includes a DFB sector serving as a reflector and a gain sector. The gain sector is connected to the DFB sector and includes an as-cleaved facet formed at the end of the gain sector. When a current less than a threshold current is applied to the DFB sector to allow the DFB sector to operate as a reflector, passive mode locking occurs swiftly and therefore a sector of the SA is not required, which makes manufacturing simple. Also, it is possible to effectively extend a frequency variable region compared to using of the SA.
1. A laser diode generating passive mode locking, the laser diode comprising:
a single DFB (distributed feedback) sector having a grating and a waveguide structure extending all the way through the single DFB sector such that serves as a reflector, as a frequency tuner, and as an extinction ratio adjuster when a current less than a threshold current is applied to the single DFB sector; and
a gain sector connected to the single DFB sector and having an as-cleaved facet formed at the end of the gain sector.
2. The laser diode of claim 1 , wherein the current applied to the single DFB sector is greater than about 70% of the threshold current.
3. The laser diode of claim 2 , wherein the single DFB sector in cooperation with the gain sector becomes a single resonant cavity.
4. The laser diode of claim 1 , wherein the gain sector is divided into at least two sections to receive a uniform current.
5. The laser diode of claim 1 , further comprising a phase control sector between the single DFB sector and the gain sector.
6. The laser diode of claim 5 , wherein creation and the frequency of the optical pulse by the laser diode is controlled by the amount of a current applied to the phase control sector.
7. The laser diode of claim 1 , wherein the frequency of the optical pulse is varied by the amount of the current applied to the single DFB sector.
8. The laser diode of claim 1 , wherein the number of modes and the width of the optical pulse are determined by a ratio of an entire cavity's mode interval to the width of the DFB reflection spectrum.
9. A method of creating an optical pulse, the method comprising:
providing a laser diode including a single DFB sector having a grating and a waveguide structure extending all the way through the single DFB sector such that the single DFB sector serves as a reflector, as a frequency tuner, and as an extinction ratio adjuster, and a gain sector connected to the single DFB sector and having an as-cleaved facet formed at the end of the gain sector; and
applying a current less than a threshold current to the single DFB sector of the laser diode to create an optical pulse by generating passive mode locking.
10. The method of claim 9 , wherein the current applied to the single DFB sector is greater than about 70% of the threshold current.
11. The method of claim 9 , wherein the gain sector is divided into at least two sections to receive a uniform current.
12. The method of claim 9 , wherein the amount of the current applied to the single DFB sector is controlled to vary the frequency of the optical pulse.
13. The method of claim 9 , wherein the amount of the current applied to the gain sector is controlled to vary the frequency of the optical pulse.
14. The method of claim 9 , wherein the laser diode further includes a phase control sector between the single DFB sector and the gain sector, and a current is applied to the phase control sector to control creation and the frequency of the optical pulse of the laser diode.
15. The method of claim 9 , wherein a ratio of an entire cavity's mode interval to the width of the single DFB reflection spectrum is controlled to determine the number of modes and the width of the optical pulse.
16. The laser diode of claim 1 , wherein the threshold current is less than or equal to about 55 mA.
17. The laser diode of claim 9 , wherein the frequency of the optical pulse is around 40 GHz.
18. The method of claim 9 , wherein the threshold current is less than or equal to about 55 mA.
19. The method of claim 18 , wherein the frequency of the optical pulse is around 40 GHz.
20. The method of claim 1 , wherein the threshold current (IDFB) is between about 40 to 54 mA.