BAW resonator bi-layer top electrode with zero etch undercut
View Patent ↗A method of fabricating a BAW piezoelectric resonator, the method comprising the steps of providing a bottom electrode and a piezoelectric layer coupled to the bottom electrode. A bottom metal layer is deposited on a top electrode on the piezoelectric layer. The bottom metal layer is patterned and etched. A top metal layer of the top electrode is deposited on the etched bottom metal layer. The top metal layer is patterned and layered such that the top metal layer completely covers the top and sides of the bottom metal layer.
1. A method of fabricating a piezoelectric resonator, the method comprising:
a. providing a bottom electrode and a piezoelectric layer coupled to the bottom electrode;
b. depositing a bottom metal layer to form part of a top electrode on the piezoelectric layer;
c. patterning and etching the bottom metal layer;
d. depositing a top metal layer to form part of the top electrode on the etched bottom metal layer, wherein the top metal layer contacts a top surface of the bottom metal layer and side surfaces of the bottom metal layer; and
e. patterning and etching the top metal layer such that the top metal layer completely covers the top surface and the side surfaces of the bottom metal layer.
2. The method of claim 1 further comprising:
a. depositing an interconnect metal layer on the top metal layer; and
b. patterning and etching the interconnect metal layer such that the bottom metal layer of the top electrode is isolated from the etching, and wherein the interconnect metal layer contacts side surfaces and the top surface of the top metal layer.
3. The method of claim 2 wherein the interconnect metal layer is physically isolated from the bottom metal layer of the top electrode.
4. The method of claim 2 wherein the interconnect metal layer comprises a first interconnect metal layer and a second interconnect metal layer.
5. The method of claim 4 wherein the first interconnect metal layer comprises titanium tungsten.
6. The method of claim 4 wherein the second interconnect metal layer comprises aluminum copper or copper.
7. The method of claim 2 wherein the interconnect metal layer comprises titanium tungsten, tungsten, or molybdenum.
8. The method of claim 2 wherein the interconnect metal layer comprises a metal material that is selectively etched relative to a material of the top metal layer of the top electrode.
9. The method of claim 2 wherein the piezoelectric resonator comprises a bulk acoustic wave resonator.
10. The method of claim 2 wherein the top metal layer covers the sides of the bottom metal layer by about 0.3 um to about 3 um.
11. The method of claim 2 wherein the bottom metal layer comprises a refractory metal.
12. The method of claim 11 wherein the bottom metal layer comprises molybdenum.
13. The method of claim 11 wherein the bottom metal layer comprises ruthenium, tungsten, platinum, osmium, rhenium or iridium.
14. The method of claim 2 wherein the top metal layer comprises aluminum, gold, platinum, or an aluminum alloy composition.
15. The method of claim 2 wherein the top metal layer comprises a metal alloy composition.