Method of room temperature covalent bonding
View Patent ↗A method of bonding includes using a bonding layer having a fluorinated oxide. Fluorine may be introduced into the bonding layer by exposure to a fluorine-containing solution, vapor or gas or by implantation. The bonding layer may also be formed using a method where fluorine is introduced into the layer during its formation. The surface of the bonding layer is terminated with a desired species, preferably an NH 2 species. This may be accomplished by exposing the bonding layer to an NH 4 OH solution. High bonding strength is obtained at room temperature. The method may also include bonding two bonding layers together and creating a fluorine distribution having a peak in the vicinity of the interface between the bonding layers. One of the bonding layers may include two oxide layers formed on each other. The fluorine concentration may also have a second peak at the interface between the two oxide layers.
1. A bonded structure, comprising:
first and second elements;
first and second bonding layers respectively formed on said first and second elements;
said first bonding layer non-adhesively bonded to said second bonding layer; and
said first bonding layer comprising a fluorinated oxide.
2. A structure as recited in claim 1 , wherein:
said first bonding layer comprises a first oxide layer formed on a second oxide layer; and
a fluorine concentration in said first bonding layer has a first peak located in the vicinity of an interface between said first and second bonding layers and a second peak located at an interface between said first and second oxide layers.
3. A structure as recited in claim 1 , wherein said first bonding layer comprises a fluorine-implanted layer.
4. A structure as recited in claim 1 , wherein said first bonding layer comprises a layer having a surface etched with a fluorine solution.
5. A structure as recited in claim 1 , wherein said first bonding layer comprises an oxide layer having a surface etched with a solution containing HF.
6. A structure as recited in claim 1 , wherein said first bonding layer comprises a first oxide layer formed at a temperature in a range about 100-2500° C. on a second oxide layer containing fluorine.
7. A structure as recited in claim 1 , wherein said first bonding layer comprises a first oxide layer formed at about 250° C. on a second oxide layer containing fluorine.
8. A structure as recited in claim 1 , wherein said first bonding layer comprises an oxide layer implanted with a F-containing species to a dose in a range of about 1×10 15 to 1×10 16 /cm 2 .
9. A structure as recited in claim 1 , wherein said first bonding layer comprises a layer having a plurality of discrete regions containing fluorine.
10. A structure as recited in claim 1 , wherein said first bonding layer comprises a surface terminated with at least one of Si-NH 2 and Si-OH.
11. A structure as recited in claim 1 , wherein said first bonding layer comprises a surface terminated with Si-NH 2 and Si-OH.