IP Library Granted Patent US 7,879,180
Granted Patent B2
US 7,879,180 · App. 11/447,254 · Granted Feb 1, 2011

Polishing device and polishing method

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Quick Facts
Patent No.
US 7,879,180
App. No.
11/447,254
Granted
Feb 1, 2011
Kind
B2
Abstract

Disclosed are a polishing device and polishing method for forming a wafer with high flatness using a CMP process. For the polishing of the wafer, a polishing device including a chuck section and a polishing member having a needle member is used. In the polishing, the wafer is fixed on the chuck section and then, a working fluid containing no abrasive grains is supplied to a wafer surface as well as the needle member is pressed against the wafer surface and is caused to rapidly vibrate. By doing so, the needle member tip is caused to vibrate to rub the wafer surface, thereby performing the polishing. As a result, dishings due to asperities on the wafer surface or scratches extending over a wide range are prevented from occurring, so that the wafer with high flatness can be obtained.

Claims (29)

1. A polishing device for polishing a workpiece surface, comprising:

a polishing member is constructed by a plurality of blocks having a needle member, wherein

polishing of the workpiece surface is performed by bringing the needle member into contact with the workpiece surface and causing the needle member to vibrate,

wherein:

the blocks are connected such that when the polishing member is disposed to face the workpiece surface, the needle member is disposed on the workpiece surface side; and

the blocks are constructed freely movably such that each position of the blocks in the direction being separated from and brought into contact with the workpiece surface adjustable in a state where the blocks are connected,

wherein each of the blocks has a working fluid supplying port for supplying to the workpiece surface a working fluid which reacts with the workpiece surface.

2. The polishing device according to claim 1 , wherein the polishing is performed while supplying a working fluid which reacts with the workpiece surface to the workpiece surface.

3. The polishing device according to claim 2 , wherein the working fluid contains no abrasive grains.

4. The polishing device according to claim 1 , wherein the polishing member is disposed such that the needle member faces the workpiece surface, and is caused to vibrate in the direction almost parallel to the workpiece surface.

5. The polishing device according to claim 1 , wherein the blocks are constructed such that each pressing force of the blocks against the workpiece surface can be controlled.

6. The polishing device according to claim 1 , further comprising a holding section for fixing and holding the workpiece.

7. The polishing device according to claim 1 , wherein the needle member is made of carbon nanotubes.

8. The polishing device according to claim 1 , wherein a tip of the needle member is formed into a spherical shape.

9. The polishing device according to claim 1 , wherein the needle member has a tube capable of flowing a working fluid which reacts with the workpiece surface to the workpiece surface, and a sphere rotatably provided on a tip of the tube.

10. The polishing device according to claim 1 , wherein the workpiece is fixed when the polishing is performed.

11. A polishing method for polishing a workpiece surface, comprising:

polishing, using a polishing member having a needle member, the workpiece surface by bringing the needle member into contact with the workpiece surface and causing the needle member to vibrate,

wherein:

the polishing member is constructed by connecting a plurality of blocks having the needle member; and

each position of the blocks in the direction being separated from and brought into contact with the workpiece surface is adjusted to perform the polishing on an area to be polished,

wherein the needle member is made of carbon nanotubes.

12. The method according to claim 11 , wherein the polishing is performed while supplying a working fluid which reacts with the workpiece surface to the workpiece surface.

13. The method according to claim 12 , wherein the working fluid contains no abrasive grains.

14. The method according to claim 11 , wherein the polishing is performed by causing the needle member to vibrate in the direction almost parallel to the workpiece surface.

15. The method according to claim 11 , wherein:

the polishing member is constructed by connecting a plurality of blocks having the needle member; and

each pressing force of the blocks against the workpiece surface is controlled to perform the polishing on an area to be polished.

16. The method according to claim 11 , wherein the polishing is performed by fixing the workpiece.

Assignments (9)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 17, 2025
From: FUJITSU LIMITED
To: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Reel/Frame 073964/0516 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 27, 2024
From: FUJITSU LIMITED
To: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Reel/Frame 069454/0333 →
MERGER Recorded May 24, 2023
From: FUJITSU SEMICONDUCTOR LIMITED
To: FUJITSU LIMITED
Reel/Frame 064221/0545 →
CHANGE OF NAME AND CHANGE OF ADDRESS Recorded Jul 16, 2020
From: AIZU FUJITSU SEMICONDUCTOR LIMITED
To: FUJITSU SEMICONDUCTOR LIMITED
Reel/Frame 053481/0962 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 14, 2020
From: FUJITSU SEMICONDUCTOR LIMITED
To: AIZU FUJITSU SEMICONDUCTOR LIMITED
Reel/Frame 053209/0468 →
CHANGE OF ADDRESS Recorded Dec 23, 2016
From: FUJITSU SEMICONDUCTOR LIMITED
To: FUJITSU SEMICONDUCTOR LIMITED
Reel/Frame 041188/0401 →
CHANGE OF NAME Recorded Sep 27, 2010
From: FUJITSU MICROELECTRONICS LIMITED
To: FUJITSU SEMICONDUCTOR LIMITED
Reel/Frame 025046/0478 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 9, 2008
From: FUJITSU LIMITED
To: FUJITSU MICROELECTRONICS LIMITED
Reel/Frame 021976/0089 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 6, 2006
From: TAKAHASHI, YUTO
To: FUJITSU LIMITED
Reel/Frame 017975/0924 →